Aluminum nitride plate

Patent metadata

Field	Value
Publication number	US-12415728-B2
Application number	US-202017030895-A
Country	US
Kind code	B2
Filing date	Sep 24, 2020
Priority date	Mar 27, 2018
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

An aluminum nitride plate satisfies both of a “relation 1: c1>97.5%” and a “relation 2: c2/c1<0.995” where c1 is a c-plane degree of orientation that is defined as a ratio of a diffraction intensity of (002) plane to a sum of the diffraction intensity of (002) plane and a diffraction intensity of (100) plane when the surface layer of the aluminum nitride plate is subjected to an X-ray diffraction measurement, and c2 is a c-plane degree of (002) plane to the sum of the diffraction intensity of (002) plane and the diffraction intensity of (100) plane when a portion other than the surface layer of the aluminum nitride plate is subjected to the X-ray diffraction. Moreover, in the aluminum nitride plate, a difference in nitrogen content between the surface layer and the portion other than the surface layer is less than 0.15% in weight ratio.

First claim

The invention claimed is:

1. An aluminum nitride plate, wherein
the aluminum nitride plate satisfies-both all three of following relations (1), (2) and (3),
c 1>97.5%  (1):

c 2>97%  (2):

c 2 /c 1<0.995  (3):

where c1 is a c-plane degree of orientation that is defined as a ratio of a diffraction intensity of (002) plane to a sum of the diffraction intensity of (002) plane and a diffraction intensity of (100) plane when a surface layer of the aluminum nitride plate is subjected to an X-ray diffraction measurement along a thickness direction of the surface layer, and
c2 is a c-plane degree of orientation that is defined as a ratio of the diffraction intensity of (002) plane to the sum of the diffraction intensity of (002) plane and the diffraction intensity of (100) plane when a portion other than the surface layer of the aluminum nitride plate is subjected to the X-ray diffraction measurement along a thickness direction of the portion, and
a difference in nitrogen content between the surface layer and the portion other than the surface layer is less than 0.15 percent in weight ratio,
wherein the surface layer is a portion included in a layer located at one end of the aluminum nitride plate out of 10 layers obtained by splitting the aluminum nitride plate into 10 along its thickness direction, and the portion is exposed at a surface of the aluminum nitride plate on the one end.

2. The aluminum nitride plate according to claim 1 , wherein
a half-value width in an X-ray rocking curve profile of (102) plane of an aluminum nitride crystal in the surface layer is 2.5 degrees or less.

Assignees

• Ngk Insulators Ltd

Inventors

• Kobayashi Yoshimasa
• Kobayashi Hiroharu

Classifications

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2908

  Nitrides · CPC title

• C30B29/38

  Nitrides · CPC title

• C01P2002/78

  by stacking-plane distances or stacking sequences · CPC title

• C01P2002/74

  by peak-intensities or a ratio thereof only · CPC title