Acoustic wave device, filter, multiplexer, and manufacturing method of acoustic wave device

Patent metadata

Field	Value
Publication number	US-12413199-B2
Application number	US-202217956481-A
Country	US
Kind code	B2
Filing date	Sep 29, 2022
Priority date	Sep 30, 2021
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

An acoustic wave device includes a substrate, lower and upper electrodes provided over the substrate, a piezoelectric film that is provided over the substrate, is interposed between the lower and upper electrodes, and has a pair of through holes that sandwich a resonance region therebetween in a first direction, are provided along the resonance region, and are connected to an air gap that is formed between the substrate and the lower electrode and overlaps the resonance region in the plan view, the lower and upper electrodes overlapping across the piezoelectric film in the resonance region, and additional films that are not provided in a central region of the resonance region in the plan view and are provided in respective edge regions, which are located on respective sides of the central region in a second direction substantially orthogonal to the first direction in the plan view, of the resonance region.

First claim

What is claimed is:

1. An acoustic wave device comprising:
a substrate;
a lower electrode and an upper electrode provided over the substrate;
a piezoelectric film that is provided over the substrate, at least a part of the piezoelectric film being interposed between the lower electrode and the upper electrode thereby defining a resonance region in a plan view where the lower electrode and the upper electrode overlap with each other across said at least a part of the piezoelectric film, the piezoelectric film having a pair of through holes, the pair of through holes sandwiching the resonance region therebetween in a first direction in the plan view, being provided along the resonance region, and being connected to an air gap, the air gap being formed between the substrate and the lower electrode and overlapping with the resonance region in the plan view; and
additional films that are not provided in a central region of the resonance region in the plan view and that are not provided in entire respective first edge regions, which are located on respective sides of the central region in the first direction in the plan view, of the resonance region, the additional film being provided in respective second edge regions, which are located on respective sides of the central region in a second direction substantially orthogonal to the first direction in the plan view, of the resonance region.

2. The acoustic wave device according to claim 1 ,
wherein the lower electrode and the upper electrode excite thickness-shear vibration in the piezoelectric film, and
wherein the second direction is substantially parallel to a vibration direction of the thickness-shear vibration.

3. The acoustic wave device according to claim 1 , wherein in the plan view, the resonance region is surrounded by the pair of through holes in the first direction and by the additional films in the second direction, so that a substantially entire circumference of the resonance region is surrounded by the additional films and the pair of through holes.

4. The acoustic wave device according to claim 1 , wherein, in the plan view, the pair of through holes are in contact with the resonance region at respective sides of the resonance region in the first direction.

5. The acoustic wave device according to claim 1 , wherein the resonance region has a substantially rectangular shape in the plan view, and sides opposite to each other in the first direction of the resonance region are defined by the pair of through holes.

6. A filter comprising:
the acoustic wave device according to claim 1 .

7. A multiplexer comprising:
the filter according to claim 6 .

8. An acoustic wave device comprising:
a substrate;
a lower electrode and an upper electrode provided over the substrate;
a piezoelectric film that is provided over the substrate, at least a part of the piezoelectric film being interposed between the lower electrode and the upper electrode thereby defining a resonance region in a plan view where the lower electrode and the upper electrode overlap with each other across said at least a part of the piezoelectric film, the piezoelectric film having a pair of through holes, the pair of through holes sandwiching the resonance region therebetween in a first direction in the plan view, being provided along the resonance region, and being connected to an air gap, the air gap being formed between the substrate and the lower electrode and overlapping with the resonance region in the plan view; and
additional films that are not provided in a central region of the resonance region in the plan view and are provided in respective edge regions, which are located on respective sides of the central region in a second direction substantially orthogonal to the first direction in the plan view, of the resonance region,
wherein the additional films are longer than the resonance region in the first direction, and
wherein at least a part of each of the pair of through holes is sandwiched between the additional films in the second direction in the plan view.

9. An acoustic wave device comprising:
a substrate;
a lower electrode and an upper electrode provided over the substrate;
a piezoelectric film that is provided over the substrate, at least a part of the piezoelectric film being interposed between the lower electrode and the upper electrode thereby defining a resonance region in a plan view where the lower electrode and the upper electrode overlap with each other across said at least a part of the piezoelectric film, the piezoelectric film having a pair of through holes, the pair of through holes sandwiching the resonance region therebetween in a first direction in the plan view, being provided along the resonance region, and being connected to an air gap, the air gap being formed between the substrate and the lower electrode and overlapping with the resonance region in the plan view; and
additional films that are not provided in a central region of the resonance region in the plan view and are provided in respective edge regions, which are located on respective sides of the central region in a second direction substantially orthogonal to the first direction in the plan view, of the resonance region,
wherein the additional films are provided in a ring shape on at least one of the following surfaces: a first surface of the piezoelectric film on which the lower electrode is provided and a second surface of the piezoelectric film on which the upper electrode is provided, and
wherein the pair of through holes are provided inside the ring-shaped additional films.

Assignees

• Taiyo Yuden Kk

Inventors

• Kawashima Tasuku
• Ishida Mamoru
• Iwaki Ryo

Classifications

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H2003/021

  the resonators or networks being of the air-gap type · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title

• H03H9/173

  Air-gaps · CPC title

• H03H9/02157

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title