Transfer component and manufacturing method thereof, and transfer head

Patent metadata

Field	Value
Publication number	US-12412770-B2
Application number	US-202217720715-A
Country	US
Kind code	B2
Filing date	Apr 14, 2022
Priority date	Oct 19, 2020
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

A transfer component and a manufacturing method thereof, and a transfer head are provided in the disclosure. The method includes the following. An elastic adhesive layer is disposed on a surface of a substrate. A reticle with a hollow area is disposed on the elastic adhesive layer. The elastic adhesive layer is etched through the hollow area of the reticle.

First claim

What is claimed is:

1. A manufacturing method for a transfer component, the transfer component being configured to transfer light-emitting diode (LED) chips, the manufacturing method comprising:
disposing an elastic adhesive layer on a surface of a substrate;
disposing a reticle on the elastic adhesive layer, the reticle comprising hollow areas and convex areas relative to the hollow areas;
etching the elastic adhesive layer through the hollow areas of the reticle to form a plurality of adhesive bumps used for transferring the LED chips by using the elastic adhesive layer, the convex areas corresponding to the plurality of adhesive bumps; and
obtaining the transfer component with the plurality of adhesive bumps, by removing the reticle after the etching is completed,
wherein disposing the reticle on the elastic adhesive layer comprises:
(i) providing a reticle-manufacturing base plate and a reticle layer formed on the reticle-manufacturing base plate; patterning the reticle layer to form the reticle; binding the elastic adhesive layer and the reticle; and removing the reticle-manufacturing base plate; or
(ii) disposing a reticle layer on the elastic adhesive layer; and patterning the reticle layer to form the reticle.

2. The manufacturing method for a transfer component of claim 1 , wherein patterning the reticle layer to form the reticle comprises:
disposing a photoresist layer on the reticle layer;
patterning the photoresist layer to define a plurality of photoresist hollow areas;
obtaining the reticle with the hollow areas by etching the reticle layer through the plurality of photoresist hollow areas; and
removing the photoresist layer.

3. The manufacturing method of claim 1 , wherein the reticle comprises a reticle basic layer and a reticle sacrificial layer, and when the reticle is disposed on the elastic adhesive layer, the reticle sacrificial layer is located between the reticle basic layer and the elastic adhesive layer.

4. The manufacturing method of claim 3 , wherein forming the reticle layer comprises:
disposing the reticle basic layer on the reticle-manufacturing base plate; and
depositing the reticle sacrificial layer on the reticle basic layer, to form the reticle layer.

5. The manufacturing method of claim 3 , wherein disposing the reticle layer on the elastic adhesive layer comprises:
disposing the reticle sacrificial layer on the reticle basic layer; and
adhering a surface of the reticle sacrificial layer away from the reticle basic layer by using the elastic adhesive layer.

6. The manufacturing method of claim 3 , wherein disposing the reticle layer on the elastic adhesive layer comprises:
disposing the reticle sacrificial layer on the elastic adhesive layer; and
disposing the reticle basic layer on the reticle sacrificial layer.

7. The manufacturing method of claim 3 , wherein the reticle basic layer comprises a gallium nitride-based (GaN-based) epitaxial layer.

8. The manufacturing method of claim 7 , wherein removing the reticle-manufacturing base plate comprises:
separating the reticle-manufacturing base plate from the reticle basic layer by using at least one of a laser with a wavelength of 266 nanometers (nm) or a laser with a wavelength of 355 nm.

9. The manufacturing method of claim 3 , wherein removing the reticle comprises:
putting the elastic adhesive layer and the reticle in a target solution, and corroding the reticle sacrificial layer of the reticle by using the target solution, wherein:
the target solution has no effect on the elastic adhesive layer, or a reaction speed of the target solution with the elastic adhesive layer is less than that of the target solution with the reticle sacrificial layer.

10. The manufacturing method of claim 9 , wherein the reticle sacrificial layer comprises at least one of a silicon dioxide (SiO 2 ) layer or a silicon nitride (Si 3 N 4 ) layer, and the target solution comprises a buffered oxide etch (BOE) solution.

11. The manufacturing method of claim 1 , wherein etching the elastic adhesive layer comprises:
dry etching the elastic adhesive layer by an inductively coupled plasma (ICP) etching manner.

12. The manufacturing method of claim 11 , wherein dry etching the elastic adhesive layer by the ICP manner comprises:
dry etching the elastic adhesive layer by the ICP manner with at least one of oxygen (O 2 ), argon (Ar), or boron trifluoride (BCl 3 ).

13. The manufacturing method of claim 1 , wherein disposing the elastic adhesive layer on the surface of the substrate comprises:
forming the elastic adhesive layer on the substrate by an injection molding process.

14. The manufacturing method of claim 1 , wherein the elastic adhesive layer is a polydimethylsiloxane (PDMS) layer, and the transfer component is a PDMS stamp.

Assignees

• Chongqing Konka Photoelectric Tech Research Institute Co Ltd

Inventors

• Wang Tao

Classifications

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• G03F7/0015

  Production of aperture devices, microporous systems or stamps · CPC title

• H10H20/80

  Constructional details · CPC title