Electronic systems including two-dimensional material structures

Patent metadata

Field	Value
Publication number	US-12412745-B2
Application number	US-202217811426-A
Country	US
Kind code	B2
Filing date	Jul 8, 2022
Priority date	Aug 31, 2016
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

First claim

What is claimed is:

1. An electronic system, comprising:
at least one semiconductor device including at least one semiconductor device structure comprising:
a 2D material structure comprising a stack including substantially crystalline-defect-free forms of two or more of at least one carbide and at least one carbonitride having the general chemical formula M n+1 X n , where:
M is a transition metal from Group IV or Group V of the Periodic Table of Elements; and
X is one or more of C and N, and
wherein the substantially crystalline-defect-free forms are substantially free of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects; and

peripheral circuitry electrically connected to the at least one semiconductor device.

2. The electronic system of claim 1 , wherein M is Ti, Hf, Zr, V, Nb, or Ta.

3. The electronic system of claim 1 , wherein:
the stack includes the at least one carbide; and
the at least one carbide comprises at least two carbides.

4. The electronic system of claim 1 , wherein:
the stack includes the at least one carbonitride; and
the at least one carbonitride comprises at least two carbonitrides.

5. The electronic system of claim 1 , wherein the stack includes the at least one carbide and the at least one carbonitride.

6. The electronic system of claim 1 , wherein the 2D material structure further comprises a substantially crystalline-defect-free form of at least one transition metal dichalcogenide having the general chemical formula AY 2 , where:
A is Mo, W, Nb, Zr, Hf, Re, Pt, Ti, Ta, V, Co, Cd, or Cr; and
Y is S, Se, or Te.

7. The electronic system of claim 6 , wherein the at least one transition metal dichalcogenide is selected from MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , NbSe 2 , ZrS 2 , ZrSe 2 , HfS 2 , HfSe 2 , and ReSe 2 .

8. The electronic system of claim 7 , the at least one transition metal dichalcogenide comprises MoS 2 .

9. The electronic system of claim 1 , wherein the 2D material structure further comprises one or more of graphene, graphene-oxide, stanene, phosphorene, hexagonal boron nitride, borophene, silicene, graphyne, germanene, and germanane.

10. The electronic system of claim 1 , wherein the 2D material structure includes one of oxygen surface termination, hydroxyl surface termination, and fluoro surface termination.

11. An electronic system, comprising:
an input device;
an output device;
a processor device operably coupled to the input device and the output device; and
a memory device operably coupled to the processor device and including a stack structure comprising adjacent substantially crystalline-defect-free 2D materials, at least two of the adjacent substantially crystalline-defect-free 2D materials having different material compositions than one another and individually selected from at least one carbide and at least one carbonitride having the general chemical formula M n+1 X n , where:
M is Ti, Hf, Zr, V, Nb, or Ta; and
X is one or more of C and N, and
wherein each of the adjacent substantially crystalline-defect-free 2D materials is substantially free of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects.

12. The electronic system of claim 11 , wherein the memory device is selected from a random access memory device and a read only memory device.

13. The electronic system of claim 11 , wherein the stack structure is included within a transistor of the memory device.

14. The electronic system of claim 11 , wherein the memory device further includes a base structure adjacent the stack structure, the base structure comprising one or more of silicon, silicon dioxide, silicon with native oxide, silicon nitride, a carbon-containing silicon nitride, glass, semiconductor, metal oxide, metal, titanium nitride, carbon-containing titanium nitride, tantalum, tantalum nitride, carbon-containing tantalum nitride, niobium, niobium nitride, carbon-containing niobium nitride, molybdenum, molybdenum nitride, carbon-containing molybdenum nitride, tungsten, tungsten nitride, carbon-containing tungsten nitride, copper, cobalt, nickel, iron, aluminum, and a noble metal.

15. The electronic system of claim 11 , wherein the adjacent substantially crystalline-defect-free 2D materials further comprise one or more monolayers of one or more of graphene, graphene-oxide, stanene, phosphorene, hexagonal boron nitride, borophene, silicene, graphyne, germanene, germanane, 2D supracrystal, MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , NbSe 2 , ZrS 2 , ZrSe 2 , HfS 2 , HfSe 2 , and ReSe 2 .

16. The electronic system of claim 11 , wherein stack structure has oxygen surface termination, hydroxyl surface termination, or fluoro surface termination.

17. An electronic system, comprising:
an input device;
an output device;
a processor device operably coupled to the input device and the output device; and
a memory device operably coupled to the processor device and including at least one transistor having a channel including a stack of 2D materials substantially free of crystalline defects, at least two of the 2D materials individually having the general chemical formula M n+1 X n , where:
M is a transition metal from Group IV or Group V of the Periodic Table of Elements; and
X is one or more of C and N, and

 wherein the 2D materials substantially free of crystalline defects each is substantially free of X-interstitial defects, X-vacancy defects, M-interstitial defects, M-vacancy defects, MX-vacancy defects, and XX-vacancy defects.

18. The electronic system of claim 17 , wherein M is selected from Ti, Hf, Zr, V, Nb, and Ta.

19. The electronic system of claim 17 , wherein the stack of 2D materials further comprises one or more monolayers of one or more of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , NbSe 2 , ZrS 2 , ZrSe 2 , HfS 2 , HfSe 2 , and ReSe 2 .

20. The electronic system of claim 17 , wherein the stack of 2D materials further comprises one or more monolayers of one or more of metal material, semi-metal material, and semiconductive material.

Assignees

• Micron Technology Inc

Inventors

• Meade Roy E
• Pandey Sumeet C

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P14/3452 Primary

  Microstructure · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title