Fabrication method of conductive nanonetworks through adaptation of sacrificial layer

Patent metadata

Field	Value
Publication number	US-12412678-B2
Application number	US-202117539660-A
Country	US
Kind code	B2
Filing date	Dec 1, 2021
Priority date	Dec 4, 2020
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

There is provided a fabrication method of conductive nanonetworks through adaptation of a sacrificial layer includes: forming nanowire networks on a substrate; forming the sacrificial layer on a front surface of the substrate including the nanowire networks; removing the nanowire networks to expose a surface of the substrate within a region from which the nanowire networks are removed; forming a conductive material on the front surface of the substrate to fill the region, from which the nanowire networks are removed, with the conductive material while forming the conductive material on the sacrificial layer; and forming conductive nanonetworks made of the conductive material which fills the region from which the nanowire networks are removed, by removing the sacrificial layer.

First claim

What is claimed is:

1. A fabrication method of conductive nanonetworks through adaptation of a sacrificial layer, comprising:
electrospinning nanowire networks on a surface of a substrate to form the nanowire networks in contact with the surface of the substrate;
depositing a sacrificial layer on the substrate including the nanowire networks to form the sacrificial layer in contact with the nanowire networks on the surface of the substrate and in contact with the surface of the substrate on which the nanowire networks are not formed;
removing the nanowire networks with a solvent to expose a region of the surface of the substrate in contact with the nanowire networks, wherein the sacrificial layer formed in contact with the nanowire networks is removed together with the nanowire networks, and the sacrificial layer formed in contact with the surface of the substrate is not removed and remains;
depositing a conductive material on the substrate including the sacrificial layer to fill a region of the surface of the substrate where the nanowire networks are removed; and
removing the sacrificial layer formed in contact with the surface of the substrate to expose a region of the surface of the substrate in contact with the sacrificial layer and to form conductive nanonetworks made of the conductive material which fills the region of the surface of the substrate where the nanowire networks are removed, wherein the conductive material formed on the sacrificial layer is removed together with the sacrificial layer, wherein the nanowire networks is poly (methyl methacrylate) (PMMA) or poly (N-vinylpyrrolidone) (PVP),

wherein the material of the sacrificial layer is C60 fullerene,
wherein the nanowire networks and the sacrificial layer have different dissolution selectivity from each other, and the sacrificial layer formed in contact with the surface of the substrate is not removed and remains during the removing of the nanowire networks with the solvent,
wherein the solvent is acetone when using the PMMA as the nanowire networks and the solvent is water when using the PVP as the nanowire networks,
and
wherein a location and a geometric shape of the nanowire networks are the same as those of the conductive nanonetworks.

2. The fabrication method of conductive nanonetworks through adaptation of a sacrificial layer according to claim 1 ,
further comprising: adjusting a diameter and density of the nanowire networks and a height of the sacrificial layer, and
wherein a line width, density, and a height of the conductive nanonetworks are controllable through the step of adjusting of the diameter and density of the nanowire networks and the height of the sacrificial layer.

3. The fabrication method of conductive nanonetworks through adaptation of a sacrificial layer according to claim 1 ,
further comprising: adjusting a diameter of the nanowire networks, wherein the diameter is adjusted by adjusting a process condition of an electrospinning device, and
wherein the process condition of an electrospinning device is at least one of a diameter of a needle of the electrospinning device, a voltage applied to the needle, and a concentration of a solution containing a material which is used to form the nanowire networks.

4. The fabrication method of conductive nanonetworks through adaptation of a sacrificial layer according to claim 1 ,
further comprising: adjusting density of the nanowire networks is adjustable by adjusting a process time of the electrospinning.

5. The fabrication method of conductive nanonetworks through adaptation of a sacrificial layer according to claim 1 ,
wherein the substrate is at least one selected from a group comprising of a flexible substrate, a semiconductor substrate, an insulation substrate, and an elastic substrate.

6. The fabrication method of conductive nanonetworks through adaptation of a sacrificial layer according to claim 1 ,
wherein the conductive material is at least one selected from a group comprising of conductive metal, carbon-based conductive material, conductive polymer, and conductive nanoparticles.

Assignees

• Korea Advanced Inst Sci & Tech

Inventors

• Lee Jung-Yong
• Kim Kyungmin

Classifications

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• C23C30/00

  Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process (C23C26/00, C23C28/00 take precedence) · CPC title

• C23C14/042

  using masks · CPC title

• C23C16/042

  using masks · CPC title