Composite substrate for electro-optical element

Patent metadata

Field	Value
Publication number	US-12411367-B2
Application number	US-202217649682-A
Country	US
Kind code	B2
Filing date	Feb 2, 2022
Priority date	May 20, 2020
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

There is provided a composite substrate in which peeling is significantly suppressed, light propagation loss is small when used as an electro-optical element, and high-speed and low-voltage drive is possible, and which can achieve an extremely thin electro-optical element capable of maintaining excellent reliability even under a severe high-temperature environment. A composite substrate for an electro-optical element according to an embodiment of the present invention includes: an electro-optical crystal substrate having an electro-optical effect; a first high dielectric layer; a second high dielectric layer; and a support substrate in the stated order. The first high dielectric layer and the second high dielectric layer are directly joined to each other, and an amorphous layer is formed at a joining interface between the first high dielectric layer and the second high dielectric layer.

First claim

The invention claimed is:

1. A composite substrate for an electro-optical element, comprising: an electro-optical crystal substrate having an electro-optical effect; a first high dielectric layer; a second high dielectric layer; and a support substrate in the stated order,
wherein the first high dielectric layer and the second high dielectric layer are directly joined to each other,
wherein an amorphous layer is formed at a joining interface between the first high dielectric layer and the second high dielectric layer,
wherein the first high dielectric layer is directly formed on the electro-optical crystal substrate, and the second high dielectric layer is directly formed on the support substrate, and
wherein the support substrate contains silicon oxide as a main component, and an argon concentration in the support substrate is 0.1 atomic % to 1.0 atomic %.

2. The composite substrate for an electro-optical element according to claim 1 , wherein argon concentrations in the first high dielectric layer and the second high dielectric layer are each from 1.0 atomic % to 10 atomic %.

3. The composite substrate for an electro-optical element according to claim 1 , wherein the electro-optical crystal substrate has a thickness of from 0.1 μm to 0.8 μm.

4. The composite substrate for an electro-optical element according to claim 3 , wherein the electro-optical crystal substrate has a thickness of from 0.2 μm to 0.6 μm.

5. The composite substrate for an electro-optical element according to claim 1 , wherein the electro-optical crystal substrate is formed of one selected from lithium niobate, lithium tantalate, potassium titanate phosphate, potassium lithium niobate, potassium niobate, potassium tantalate niobate, and a solid solution of lithium niobate and lithium tantalate.

6. The composite substrate for an electro-optical element according to claim 1 , wherein the first high dielectric layer has a thickness of from 0.01 μm to 0.08 μm,
and wherein the second high dielectric layer has a thickness of from 0.001 μm to 0.04 μm.

7. The composite substrate for an electro-optical element according to claim 1 , wherein the first high dielectric layer and the second high dielectric layer are each formed of one selected from tantalum oxide, niobium oxide, titanium oxide, aluminum oxide, hafnium oxide, and silicon.

8. A composite substrate for an electro-optical element, comprising: an electro-optical crystal substrate having an electro-optical effect; a first high dielectric layer; a second high dielectric layer; and a support substrate in the stated order,
wherein the first high dielectric layer and the second high dielectric layer are directly joined to each other,
wherein an amorphous layer is formed at a joining interface between the first high dielectric layer and the second high dielectric layer,
wherein the first high dielectric layer is directly formed on the electro-optical crystal substrate, a low dielectric layer is directly formed on the support substrate, and the second high dielectric layer is directly formed on the low dielectric layer,
wherein the low dielectric layer contains silicon oxide as a main component, and
wherein the low dielectric layer contains argon, and the argon concentration in the low dielectric layer is 1.0 atomic % or less.

9. The composite substrate for an electro-optical element according to claim 8 ,
wherein the low dielectric layer is formed of one selected from silicon oxide, aluminum oxide, magnesium fluoride, and calcium fluoride.

10. The composite substrate for an electro-optical element according to claim 9 , wherein the support substrate is formed of one selected from silicon, glass, sialon, mullite, aluminum nitride, silicon nitride, magnesium oxide, sapphire, quartz, crystal, gallium nitride, silicon carbide, and gallium oxide.

11. The composite substrate for an electro-optical element according to claim 9 , wherein the low dielectric layer has a thickness of more than 10 μm and 20 μm or less.

12. The composite substrate for an electro-optical element according to claim 8 , wherein the support substrate is formed of one selected from silicon, glass, sialon, mullite, aluminum nitride, silicon nitride, magnesium oxide, sapphire, quartz, crystal, gallium nitride, silicon carbide, and gallium oxide.

13. The composite substrate for an electro-optical element according to claim 8 , wherein the low dielectric layer has a thickness of more than 10 μm and 20 μm or less.

14. The composite substrate for an electro-optical element according to claim 8 , wherein argon concentrations in the first high dielectric layer and the second high dielectric layer are each from 1.0 atomic % to 10 atomic %.

Assignees

• Ngk Insulators Ltd

Inventors

• Hattori Ryosuke
• Tai Tomoyoshi
• Asai Keiichiro
• Kondo Jungo

Classifications

• G02B2006/12142

  Modulator · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• G02F2202/09

  inorganic glass · CPC title

• G02F1/0113

  Glass-based, e.g. silica-based, optical waveguides · CPC title

• B32B15/04

  comprising metal as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a bituminous or tarry layer B32B11/08; next to a water-setting substance layer B32B13/06; next to a glass layer B32B17/061; next to a cellulosic plastic layer B32B23/042)} · CPC title