Method for constructing magnetic tunneling junction devices and use of device for spin-dependent transport characterization

Patent metadata

Field	Value
Publication number	US-12408558-B2
Application number	US-202118004660-A
Country	US
Kind code	B2
Filing date	Jul 6, 2021
Priority date	Jul 8, 2020
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

A magnetic tunneling junction (MTJ) device structure and the method of constructing such device are disclosed. Also disclosed are methods of using the device for spin-dependent transport characterization through biomolecules for structure and dynamic function analysis in physiological environments.

First claim

I claim:

1. An electronic device, comprising:
a cis-fluidic channel/chamber and a trans-fluidic channel/chamber fabricated on a planar substrate;
a channel in between and connecting the cis-fluidic and trans-fluidic channels/chambers; and
a first non-magnetic electrode and a second non-magnetic electrode sealed inside the channel, wherein the first and second non-magnetic electrodes being electrochemically deposited with one or more magnetic metal materials within the channel and under feed-back control, thereby forming a magnetic tunneling junction such that the distance between the first and second non-magnetic electrodes is between about 1-100 nm and coercivity of each of the electrodes can be individually tuned.

2. The device of claim 1 , wherein the planar substrate is a transparent substrate.

3. The device of claim 2 , wherein the transparent substrate is glass or quartz.

4. The device of claim 1 , wherein the planar substrate is a non-transparent substrate.

5. The device of claim 4 , wherein the non-transparent substrate is silicon coated with a layer of oxide.

6. The device of claim 1 , wherein the first non-magnetic electrode and second non-magnetic electrode are formed of gold, palladium, platinum or combinations thereof.

7. The device of claim 1 , wherein a cavity in which the first non-magnetic electrode and second non-magnetic electrode are sealed is formed by one or more dielectric layers.

8. The device of claim 7 , wherein the one or more dielectric layers is HfO2, SiO2 or any combination thereof.

9. The device of claim 1 , wherein the one or more magnetic metal materials are Ni, Co, Ni alloy, Co alloy or combinations thereof.

10. A method to characterize the chirality and dynamics of conformations of a molecule, comprising: measuring the spin-dependent conductance across a magnetic tunneling junction (MTJ) with a MTJ device of claim 1 and by applying an external magnetic field.

11. A method of making a magnetic tunneling junction (MTJ) device, comprising:
depositing one or more sacrificial layers on a planar substrate to define a guiding channel leading to a tunneling junction and height of a confined space for allowing electrochemical deposition;
positioning a pair of non-magnetic metal electrodes with spacing between 500 nm and 1 μm on top of a center region of the one or more sacrificial layers;
depositing a dielectric passivation layer on the pair of non-magnetic metal electrodes to seal the pair of non-magnetic metal electrodes within the one or more sacrificial layers;
depositing a top polymer or dielectric layer patterned to construct the shape of channels on top of the dielectric passivation layer to both protect the pair of non-magnetic metal electrodes underneath and serve as a mask;
exposing the one or more sacrificial layers below an open window area in the polymer or dielectric top mask by a reactive ion etching process;
attaching a top cover to seal the channels;
chemically etching one or more passivation layers by filling the channels with etchants for construct of the channels that lead to the pair of non-magnetic metal electrodes;
depositing a first additional magnetic metal layer onto one of the non-magnetic metal electrodes by electrochemical deposition; and
depositing a second additional magnetic metal layer onto the other of the non-magnetic electrodes by electrochemical deposition to form an asymmetric magnetic tunneling junction.

12. The method of making of claim 11 , wherein the planar substrate is a transparent substrate.

13. The method of making of claim 12 , wherein the transparent substrate is glass or quartz.

14. The method of making of claim 11 , wherein the planar substrate is a non-transparent substrate.

15. The method of making of claim 14 , wherein the non-transparent substrate is silicon coated with a layer of oxide.

16. The method of making of claim 11 , wherein the pair of non-magnetic metal electrodes are formed of gold, palladium, platinum or combinations thereof.

17. The method of making of claim 11 , wherein the dielectric passivation layer on the pair of non-magnetic metal electrodes to seal the pair of non-magnetic metal electrodes within the one or more sacrificial layers is HfO2, SiO2 or any combination thereof.

18. The method of making of claim 11 wherein the magnetic metal in the first additional magnetic metal layer or in the second additional magnetic metal layer is Ni, Co, Ni alloy, Co alloy or combinations thereof.

19. The method of making of claim 11 , wherein the top polymer of dielectric layer patterned to construct the shape of channels on top of the dielectric passivation layer to both protect the pair of non-magnetic metal electrodes underneath and serve as a mask is SU-8.

20. The method of making of claim 11 , wherein the top polymer of dielectric layer patterned to construct the shape of channels on top of the dielectric passivation layer to both protect the pair of non-magnetic metal electrodes underneath and serve as a mask is SiO2.

21. The method of making of claim 11 , wherein the method produces magnetic metal electrodes that are 5-200 nm thick in a planar configuration.

Assignees

• Qing Quan
• Univ Arizona State

Inventors

• Qing Quan

Classifications

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/20

  Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10) · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title