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Method for manufacturing a native emission matrix having doped and porosified In(x)GaN
US12408491B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12408491-B2 |
| Application number | US-202217806437-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 10, 2022 |
| Priority date | Jun 16, 2021 |
| Publication date | Sep 2, 2025 |
| Grant date | Sep 2, 2025 |
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Abstract
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A method for manufacturing a native emission matrix, comprising the following steps: a) providing a base structure comprising a substrate, a layer of GaN, a layer of doped In(x)GaN and an epitaxial regrowth layer of nid In(x)GaN, b) structuring first and second mesas in the base structure, the first mesa comprising a part of the layer of GaN, the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, the second mesa comprising a part of the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, c) electrochemically porosifying the second mesa, d) producing stacks on the mesas to form LED structures emitting at various wavelengths.
First claim
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What is claimed is: 1. A native emission matrix comprising: a base structure comprising successively a substrate, a layer of non-intentionally doped GaN, a layer of doped In(x)GaN with x from 0 to 8% and an epitaxial regrowth layer of not-intentionally doped In(x)GaN with x from 0 to 8%, a first mesa formed in the base structure, the first mesa comprising the layer of doped In(x)GaN, and a part of the thickness of the layer of non-intentionally doped GaN, the first mesa being covered by a first LED structure emitting at a first wavelength, a second mesa formed in the base structure, the second mesa comprising the epitaxial regrowth layer of not-intentionally doped In(x)GaN and a part of the thickness of the layer of doped In(x)GaN that is porosified, the second mesa being covered by a second LED structure emitting at a second wavelength, wherein the layer of non-intentionally doped GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN have dopant concentrations preventing them from being porosified. 2. The matrix according to claim 1 , wherein it comprises a third mesa formed in the base structure and covered by a third LED structure, emitting at a third wavelength. 3. The matrix according to claim 2 , wherein the first LED structure emits in the blue, the second LED structure emits in the red and the third LED structure emits in the green, by means of which an RGB matrix is formed. 4. The matrix according to claim 2 , wherein the third mesa comprises a part of the non-intentionally doped GaN layer, the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN. 5. The matrix according to claim 2 , wherein the third mesa comprises a part of the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, and wherein the layer of doped In(x)GaN of the third mesa is porosified.
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Classifications
Package configurations · CPC title
- H10H20/0137Primary
the light-emitting regions comprising nitride materials · CPC title
characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title
- H10H29/142Primary
Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title
having stress relaxation structures, e.g. buffer layers · CPC title
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- What does patent US12408491B2 cover?
- A method for manufacturing a native emission matrix, comprising the following steps: a) providing a base structure comprising a substrate, a layer of GaN, a layer of doped In(x)GaN and an epitaxial regrowth layer of nid In(x)GaN, b) structuring first and second mesas in the base structure, the first mesa comprising a part of the layer of GaN, the layer of doped In(x)GaN and the epitaxial regrow…
- Who is the assignee on this patent?
- Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification H10H20/0137. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 02 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).