Interconnected electrode structure having multi-conductive through hole and method of manufacturing same

Patent metadata

Field	Value
Publication number	US-12408475-B2
Application number	US-202118265265-A
Country	US
Kind code	B2
Filing date	Dec 27, 2021
Priority date	Dec 28, 2020
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

An interconnected electrode structure is provided. The interconnected electrode structure includes an insulating base material, a through hole, a first conductive body, and a second conductive body. The insulating base material includes a first surface and a second surface which face away from each other. The through hole penetrates through the insulating base material in a thickness direction. The first conductive body is formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface. The second conductive body is formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and the second conductive body is electrically combined with the first conductive body to form a conductive channel in the insulating base material.

First claim

What is claimed is:

1. An interconnected electrode structure, comprising:
an insulating base material, comprising a first surface and a second surface which face away from each other;
a through hole, penetrating through the insulating base material in a thickness direction;
a first conductive body, formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface, wherein a bottom end of the first conductive body reaches any set position between two ends of the through hole; and
a second conductive body, formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and also electrically combined with the first conductive body to form a conductive channel in the insulating base material, wherein a second conductive layer is formed on the second surface of the insulating base material, and the second conductive layer and the second conductive body are integrally formed, wherein a third conductive layer is arranged on the second surface of the insulating base material, and the third conductive layer is in electrical contact with the second conductive layer, wherein the third conductive layer is a transparent conductive layer, wherein the second conductive layer is arranged around the third conductive layer in a semi-enclosed form, the second conductive layer is arranged around the third conductive layer; the second conductive layer and the third conductive layer at least partially overlap, the second conductive layer is linear and has a line width less than or equal to 5 mm, an equivalent square resistance of the second conductive layer is less than or equal to 5 Ω/sq, a thickness of the second conductive layer is greater than a protrusion height of an edge portion of the opening of the through hole on the second surface of the insulating base material relative to the second surface, the second conductive layer covers the opening of the through hole on the second surface of the insulating base material and extends radially outward from the edge portion of the opening by 20 μm or more.

2. The interconnected electrode structure according to claim 1 , wherein a protrusion height of a highest point of the second conductive layer relative to the third conductive layer is less than 5 μm.

3. The interconnected electrode structure according to claim 1 , wherein an area of the opening of the through hole on the first surface or the second surface of the insulating base material is smaller than 0.13 mm 2 ; and/or, a perimeter of the opening of the through hole on the first surface or the second surface of the insulating base material is 10-800 μm; and/or, a protrusion height of an edge portion of the opening of the through hole on the first surface or the second surface of the insulating base material relative to the first surface or the second surface is less than 5 μm;
and/or, a conductive structure formed by conductive slurry is arranged on the first surface of the insulating base material, and the conductive structure and the first conductive body are integrally formed;
and/or, the insulating base material comprises a transparent insulating film; and/or, a thickness of the insulating base material is 1-300 μm.

4. A device, comprising a functional module and an electrode module that cooperates with the functional module, wherein the electrode module comprises the interconnected electrode structure according to claim 1 .

5. A method of manufacturing an interconnected electrode structure, the interconnected electrode structure comprising:
an insulating base material, comprising a first surface and a second surface which face away from each other;
a through hole, penetrating through the insulating base material in a thickness direction;
a first conductive body, formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface, wherein a bottom end of the first conductive body reaches any set position between two ends of the through hole; and
a second conductive body, formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and also electrically combined with the first conductive body to form a conductive channel in the insulating base material, wherein the method comprises:
machining a selected region of an insulating base material to form the through hole, wherein the through hole penetrates through the insulating base material in the thickness direction;
applying a conductive slurry containing a first conductive material to a first surface of the insulating base material, and allowing part of the conductive slurry to enter the through hole and reach a set position, wherein a selected position is located between two ends of the through hole; and
forming, from the second conductive material, a second conductive layer on the second surface of the insulating base material facing away from the first surface, and allowing part of the second conductive material to enter the through hole to form the second conductive body, wherein the second conductive body is electrically combined with the first conductive body in the through hole, and the first conductive body is formed by the conductive slurry entering the through hole, so that the conductive channel is formed in the insulating base material.

6. The method according to claim 5 , further comprising: forming a third conductive layer on the second surface of the insulating base material, wherein the third conductive layer is a transparent conductive layer.

7. The method according to claim 6 , specifically comprising: first forming the conductive channel in the insulating base material, then forming the third conductive layer on the second surface of the insulating base material, and allowing the third conductive layer to be in electrical contact with the second conductive layer; or, first forming the third conductive layer on the second surface of the insulating base material, then machining the selected region of the insulating base material to form the through holes, forming the conductive channel in the insulating base material, and allowing the second conductive layer to be in electrical contact with the third conductive layer.

8. The method according to claim 5 , wherein the second conductive layer is distributed at least on one side of the third conductive layer; and/or, the second conductive layer and the third conductive layer overlap at least partially;
and/or, the second conductive layer is arranged around the third conductive layer in a semi-enclosed form, or the second conductive layer is arranged around the third conductive layer.

9. The method according to claim 8 , wherein the second conductive layer is linear and has a line width of less than or equal to 5 mm, preferably less than or equal to 1 mm; and/or, a protrusion height of a highest point of the second conductive layer relative to the third conductive layer is less than 5 μm, preferably less than 1 μm;
and/or, an equivalent square resistance of the second conductive layer is less than or equal to 5 Ω/sq, preferably less than or equal to 1 Ω/sq.

10. The method according to claim 5 , wherein a manner of forming the second conductive layer on the second surface of the insulating base material using the second conductive material comprises a physical and/or chemical deposition manner, preferably comprising any one or a combination of more of printing, coating, adhesive dispensing, vacuum evaporation, or magnetron sputtering.

11. The method according to claim 10 , comprising: forming the second conductive layer by using any one of inkjet printing, air jet printing, intag

Assignees

• Suzhou Inst Nano Tech & Nano Bionics Sinano Cas

Inventors

• Lin Jian
• Zhang Hao
• Wang Jing
• Wang Zhenguo
• Luo Qun
• Gong Chao
• Ma Changqi

Classifications

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10K30/83

  comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes · CPC title

• H10F19/30

  comprising thin-film photovoltaic cells · CPC title

• H10F77/215 Primary

  Geometries of grid contacts · CPC title