Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film

Patent metadata

Field	Value
Publication number	US-12404450-B2
Application number	US-202117555519-A
Country	US
Kind code	B2
Filing date	Dec 20, 2021
Priority date	Jul 1, 2019
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.

First claim

What is claimed is:

1. A photodetector element comprising:
a photoelectric conversion layer that contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot,
wherein the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom, and the photoelectric conversion layer has a thickness of 10 to 600 nm, and a refractive index of 2.0 to 3.0.

2. The photodetector element according to claim 1 ,
wherein the PbS quantum dot contains 0.95 mol or more and 1.40 mol or less of the Pb atom with respect to 1 mol of the S atom.

3. The photodetector element according to claim 1 ,
wherein the ligand contains at least one selected from a ligand containing a halogen atom or a polydentate ligand containing two or more coordination moieties.

4. The photodetector element according to claim 3 ,
wherein the ligand containing a halogen atom is an inorganic halide.

5. The photodetector element according to claim 4 ,
wherein the inorganic halide contains a Zn atom.

6. The photodetector element according to claim 3 ,
wherein the ligand containing a halogen atom contains an iodine atom.

7. The photodetector element according to claim 1 ,
wherein the ligand contains at least one selected from 3-mercaptopropionic acid, zinc iodide, zinc bromide, or indium iodide.

8. The photodetector element according to claim 1 ,
wherein the ligand contains two or more kinds of ligands.

9. The photodetector element according to claim 1 ,
wherein the ligand contains a ligand containing a halogen atom and a polydentate ligand containing two or more coordination moieties.

10. The photodetector element according to claim 1 ,
wherein the photodetector element is a photodiode-type photodetector element.

11. A manufacturing method for the photodetector element according to claim 1 , the manufacturing method comprising:
using a PbS quantum dot dispersion liquid that contains PbS quantum dots that contain more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom, a ligand that is coordinated to the PbS quantum dot, and a solvent, to form a film of aggregates of PbS quantum dots.

12. An image sensor comprising the photodetector element according to claim 1 .

13. The image sensor according to claim 12 ,
wherein the image sensor senses light having a wavelength of 900 to 1,600 nm.

14. The image sensor according to claim 12 ,
wherein the image sensor is an infrared image sensor.

15. A dispersion liquid for manufacturing the photodetector element of claim 1 comprising:
PbS quantum dots that contain more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom;
a ligand that is coordinated to the PbS quantum dot; and
a solvent.

16. A semiconductor film for use in the photodetector element of claim 1 comprising:
aggregates of PbS quantum dots; and
a ligand that is coordinated to the PbS quantum dot,
wherein the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.

17. The semiconductor film according to claim 16 ,
wherein the PbS quantum dot contains 0.95 mol or more and 1.40 mol or less of the Pb atom with respect to 1 mol of the S atom.

18. A photodetector element of claim 1 ,
wherein the ligand contains at least one selected from 2-aminoethanol, zinc bromide and indium iodide.

Assignees

• Fujifilm Corp

Inventors

• Takata Masahiro
• Ono Masashi
• Kitajima Shunsuke

Classifications

• H10K30/35

  comprising inorganic nanostructures, e.g. CdSe nanoparticles · CPC title

• H10K30/352

  the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer · CPC title

• H10K39/32

  Organic image sensors · CPC title

• C09K11/661

  Chalcogenides · CPC title

• B82Y15/00

  Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title