Atomic-to-nanoscale matter emission / flow regulation device

Patent metadata

Field	Value
Publication number	US-12399150-B2
Application number	US-202017608020-A
Country	US
Kind code	B2
Filing date	May 4, 2020
Priority date	May 2, 2019
Publication date	Aug 26, 2025
Grant date	Aug 26, 2025

Abstract

Atomic-to-Nanoscale Matter Emission/Flow Regulation Devices, Systems and methods are set forth. An exemplary device can include a through-hole that has a top, and a nozzle configured to facilitate atomic-to-nanoscale matter emission/flow regulation formed in an etchable nozzle substrate. The nozzle can be configured at the smallest cross-section of the through-hole. A bottom can be formed in the nozzle substrate or selectively connected to the nozzle. Systems can include matter transportation/flow regulation columns, printing systems, etching systems and the like through which self-aligned nanodroplets or single-to-finite numbered ionic species/gas phase matter can flow under spontaneous or external excitation conditions (such as voltages) at atmospheric as well as regulated pressures.

First claim

What is claimed is:

1. An atomic-to-nanoscale matter emission/flow regulation device, comprising:
at least a first nanodroplet generation/control device having a front side, a back side and a first reservoir disposed in between the front side and the back side, the first reservoir configured for holding matter to be extracted from the first reservoir, the first nanodroplet generation/control device comprising at least a first nanodroplet column system comprising:
an upper portion of the first reservoir;
a first electrostatic lens (e-lens) disposed in between the upper portion of the first reservoir and the front side of the first nanodroplet generation/control device, the first e-lens including at least a first set of at least first and second electrodes that are laterally separated from one another by a first lateral gap having a gap width; and
a first nozzle disposed in between the first e-lens and the upper portion of the first reservoir and having a first nanodroplet orifice through which nanodroplets are generated from matter held in the first reservoir, the first nanodroplet orifice being separated from the first e-lens by a first e-lens-to-filament base gap extending between an adhesion layer of the first e-lens and the first nanodroplet orifice, where the nanodroplets generated from the matter held in the first reservoir are extracted out of the first reservoir through the first nanodroplet orifice when a first set of preselected voltage signals are applied to the first set of at least first and second electrodes, the first nozzle being precisely aligned with the first lateral gap and having a first nozzle width equal to a distance between innermost edges of side walls of the first nozzle, the first nozzle and the first lateral gap having a common central axis that ensures that the nanodroplets extracted through the first nanodroplet orifice self-align with the first lateral gap, the first nozzle width being less than or equal to 300 nanometers.

2. The atomic-to-nanoscale matter emission/flow regulation device of claim 1 , wherein the first nozzle width is less than or equal to 150 nanometers.

3. The atomic-to-nanoscale matter emission/flow regulation device of claim 2 , wherein the e-lens-to-filament base gap is less than or equal to 500 nanometers in length, or less than or equal to 100 nanometers in length.

4. The atomic-to-nanoscale matter emission/flow regulation device of claim 1 , wherein the atomic-to-nanoscale matter emission/flow regulation device is an integrated device disposed in a semiconductor chip or a semiconductor wafer.

5. The atomic-to-nanoscale matter emission/flow regulation device of claim 4 , wherein the semiconductor chip or wafer comprises:
a first substrate comprising a first semiconductor material, the first substrate having a back side and a front side corresponding to the back side and the front side, respectively, of the first nanodroplet generation/control device, the first reservoir extending from the backside of the first substrate to an inlet of the first nozzle, the first nozzle being formed in the front side of the first substrate, the first nozzle having an exit side having side walls that extend away from the central axis of the first nozzle;
one or more first layers of insulation disposed on the front side of the first substrate, said one or more first layers of insulation forming the first e-lens-to-filament base gap and separating the first e-lens from the first nozzle by a distance equal to a length of the first e-lens-to-filament base gap, wherein an opening in said one or more first layers of insulation has a width equal to the gap width of the first lateral gap and extends from top edges of the side walls of the first nozzle; and
one or more first metal layers disposed on a top surface of said one or more first layers of insulation, wherein said one or more first metal layers have an opening therein that is laterally aligned with the opening in the first layer of insulation to form the first lateral gap, wherein portions of said one or more first metal layers disposed on opposite sides of the lateral gap comprise said at least first and second electrodes of the first set of at least first and second electrodes.

6. The atomic-to-nanoscale matter emission/flow regulation device of claim 4 , wherein the semiconductor chip or wafer has at least a first set of terminals that are accessible external to the semiconductor chip or wafer and electrically coupled to said at least a first set of at least first and second electrodes to allow a first set of preselected voltage signals to be applied to said at least a first set of electrodes.

7. The atomic-to-nanoscale matter emission/flow regulation device of claim 6 , further comprising:
a controller that is external to the semiconductor chip or wafer and electrically coupled to said at least a first set of at least first and second electrodes, the controller being configured to control the first set of preselected voltages to cause nanodroplets extracted through the first nanodroplet orifice to be directed along the common central axis away from the first nanodroplet orifice or to be deflected in-flight in at least one of an X-direction and a Y-direction, the X- and Y-directions being perpendicular to the common central axis.

8. The atomic-to-nanoscale matter emission/flow regulation device of claim 7 , wherein the first nozzle is a multi-filament nozzle having at least first and second filaments arranged in a lengthwise direction of the first nozzle, the lengthwise direction being perpendicular to the widthwise direction of the first nozzle by a first nozzle length that is greater than the first nozzle width, and wherein said at least a first set of at least first and second electrodes comprises at least first and second sets of at least first and second electrodes, the first and second electrodes of the first set of at least first and second electrodes being disposed on opposite sides of the first filament, the first and second electrodes of the second set of at least first and second electrodes being disposed on opposite sides of the second filament, and wherein said first set of terminals comprises at least first and second terminals that are electrically coupled to the first and second electrodes, respectively, of the first set of electrodes, and wherein said second set of terminals comprises at least first and second terminals that are electrically coupled to the first and second electrodes, respectively, of the second set of electrodes, and wherein the controller is electrically coupled to said at least first and second sets of terminals to allow first and second sets of preselected voltage signals to be independently applied to the first and second sets of electrodes, respectively, the controller being configured to control the first and second sets of preselected voltages to cause nanodroplets to be extracted through the nanodroplet orifice.

9. The atomic-to-nanoscale matter emission/flow regulation device of claim 4 , wherein the semiconductor chip or wafer comprises:
at least a second nanodroplet generation/control device having a front side, a back side and a second reservoir disposed in between the front side and the back side of the second nanodroplet generation/control device for holding matter comprising nanoparticles, the second nanodroplet generation/control device comprising at least a second nanodroplet column system comprising:
an upper portion of the second reservoir;
a second e-lens disposed in between the upper portion of the second reservoir and the front side of the second nanodroplet generation/control device, the second e-lens including at least a second set of at least first and second electrodes that are laterally separated f

Assignees

• Univ Illinois

Inventors

• Subramanian Arunkumar

Classifications

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• B22F12/53

  Nozzles · CPC title

• B22F10/20

  Direct sintering or melting · CPC title

• B33Y30/00

  Apparatus for additive manufacturing; Details thereof or accessories therefor · CPC title

• B33Y10/00

  Processes of additive manufacturing · CPC title