Damage measurement method, apparatus and program, and x-ray diffraction apparatus

Patent metadata

Field	Value
Publication number	US-12399141-B2
Application number	US-202318124585-A
Country	US
Kind code	B2
Filing date	Mar 22, 2023
Priority date	Mar 23, 2022
Publication date	Aug 26, 2025
Grant date	Aug 26, 2025

Abstract

A damage measurement technique capable of measuring damage of a sample in a single crystal state, regardless of the surrounding condition, includes irradiating microbeam white X-rays to a sample in a single crystal state, diffraction of a spot generated by the irradiation is detected, a coefficient on variance of an intensity distribution in a specific direction in the detected diffraction spot is calculated, and a damaged state of the sample is specified based on the calculated coefficient.

First claim

What is claimed is:

1. A damage measurement method, comprising:
irradiating microbeam white X-rays with 70 keV or higher to a sample in a single crystal state,
detecting a diffraction spot generated by the irradiation,
calculating a coefficient on variance of an intensity distribution in a specific direction in the detected diffraction spot, and
specifying a damage state of the sample based on the calculated coefficient,
wherein the sample is a metal material having a dendritic structure, and
the detected diffraction spot occurs at 100 μm or more below the surface over the sample.

2. The damage measurement method according to claim 1 ,
wherein the damage state is defined by a degree of damage and a direction of damage.

3. The damage measurement method according to claim 1 ,
wherein the sample is a single crystal material, a directionally solidified material or a polycrystalline material.

4. The damage measurement method according to claim 1 ,
wherein the irradiated white X-ray is incident at 90° with respect to a surface of the sample, and
the diffraction spot is detected by a transmission method, the transmission method has a predetermined relationship between an incident X-ray and a diffracted X-ray.

5. The damage measurement method according to claim 1 ,
wherein the sample is coated with a polycrystalline coating.

6. The damage measurement method according to claim 1 ,
wherein the white X-ray to be irradiated is formed into a focal size at a sample position equivalent to a grain size of a subcrystalline grain in the sample.

7. An X-ray diffraction apparatus used for the damage measurement method according to claim 1 , comprising:
an X-ray irradiator configured to irradiate microbeam white X-rays to a sample,
a sample stage for mounting the sample, and
an X-ray detector configured to detect X-rays diffracted by the sample, wherein the sample is in a single crystal state.

8. A damage measurement method 3 , comprising:
irradiating microbeam white X-rays to a sample in a single crystal state;
detecting a diffraction spot generated by the irradiation, calculating a coefficient on variance of an intensity distribution in a specific direction in the detected diffraction spot; and
specifying a damage state of the sample based on the calculated coefficient:
wherein an energy of the irradiated white X-ray is set such that a transmittance at a position in a depth of 7 mm in the sample from an incident position on the sample is 1/e or higher.

9. A damage measurement method, comprising:
irradiating microbeam white X-rays to a sample in a single crystal state;
detecting a diffraction spot generated by the irradiation, calculating a coefficient on variance of an intensity distribution in a specific direction in the detected diffraction spot; and
specifying a damage state of the sample based on the calculated coefficient;
wherein the irradiated white X-rays have a focal spot size of 150 μm or more and 500 μm or less at a sample position.

10. A damage measurement method, comprising:
irradiating microbeam white X-rays to a sample in a single crystal state;
detecting a diffraction spot generated by the irradiation, calculating a coefficient on variance of an intensity distribution in a specific direction in the detected diffraction spot; and
specifying a damage state of the sample based on the calculated coefficient;
wherein a collimator forms a divergence angle of the white X-rays and wherein the divergence angle of the white X-ray is 0.2° or less.

11. An X-ray diffraction apparatus, comprising:
an X-ray irradiator configured to irradiate microbeam white X-rays to a sample,
a sample stage for mounting the sample, and
an X-ray detector configured to detect X-rays diffracted by the sample,
wherein the sample is in a single crystal state, and
wherein the X-ray irradiator includes a collimator for forming a divergence angle of the irradiated white X-rays to 0.2° or less.

12. A damage measurement apparatus comprising:
processing circuitry configured to
calculate a coefficient on variance of an intensity distribution in a specific direction in a diffraction spot based on intensity data acquired by irradiating microbeam white X-rays with 70 keV or higher to a sample in a single crystal state, and
specify a damage state of the sample based on the calculated coefficient,
wherein the sample is a metal material having a dendritic structure, and
the detected diffraction spot occurs at 100 μm or more below the surface over the sample.

13. A non-transitory computer readable recording medium having recorded thereon a damage measurement program causing a computer to execute a method, the method comprising:
calculating a coefficient on variance of an intensity distribution in a specific direction in a diffraction spot based on intensity data acquired by irradiating microbeam white X-rays with 70 keV or higher to a sample in a single crystal state, and
specifying a damage state of the sample based on the calculated coefficient,
wherein the sample is a metal material having a dendritic structure, and
the detected diffraction spot occurs at 100 μm or more below the surface over the sample.

14. A damage measurement apparatus comprising:
processing circuitry configured to
calculate a coefficient on variance of an intensity distribution in a specific direction in a diffraction spot based on intensity data acquired by irradiating microbeam white X-rays to a sample in a single crystal state, and
specify a damage state of the sample based on the calculated coefficient,
wherein an energy of the irradiated white X-ray is set such that a transmittance at a position in a depth of 7 mm in the sample from an incident position on the sample is 1/e or higher.

15. A damage measurement apparatus comprising:
processing circuitry configured to
calculate a coefficient on variance of an intensity distribution in a specific direction in a diffraction spot based on intensity data acquired by irradiating microbeam white X-rays to a sample in a single crystal state, and
specify a damage state of the sample based on the calculated coefficient,
wherein the irradiated white X-rays have a focal spot size of 150 μm or more and 500 μm or less at a sample position.

16. A damage measurement apparatus comprising:
processing circuitry configured to
calculate a coefficient on variance of an intensity distribution in a specific direction in a diffraction spot based on intensity data acquired by irradiating microbeam white X-rays to a sample in a single crystal state, and
specify a damage state of the sample based on the calculated coefficient,
wherein a collimator forms a divergence angle of the white X-rays, and

wherein the divergence angle of the white X-ray is 0.2° or less.

17. A non-transitory computer readable recording medium having recorded thereon a damage measurement program causing a computer to execute a method, the method comprising:
calculating a coefficient on variance of an intensity distribution in a specific direction in a diffraction spot based on intensity data acquired by irradiating microbeam white X-rays to a sample in a single crystal state; and
specifying a damage state of the sample based on the calculated coefficient,
wherein an energy of the irradiated white X-ray is set such that a transmittance at a position in a depth of 7 mm in the sample from an incident position on the sample is 1/e or higher.

18. A non-transitory computer readable recording medium having recorded thereon a damage measurement program

Assignees

• Rigaku Denki Co Ltd
• Chubu Electric Power Company Incorporated

Inventors

• Yokoyama Ryouichi
• Omote Kazuhiko
• Kobayashi Daisuke

Classifications

• G01N23/2055 Primary

  Analysing diffraction patterns · CPC title