Light-emitting device

Patent metadata

Field	Value
Publication number	US-12396296-B2
Application number	US-202217992717-A
Country	US
Kind code	B2
Filing date	Nov 22, 2022
Priority date	Jan 20, 2022
Publication date	Aug 19, 2025
Grant date	Aug 19, 2025

Abstract

A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

First claim

What is claimed is:

1. A light-emitting device, comprising:
an epitaxial structure that includes a first semiconductor layer, an active layer disposed on said first semiconductor layer, and a second semiconductor layer disposed on said active layer opposite to said first semiconductor layer;
a transparent current spreading unit that is disposed on said second semiconductor layer;
a first electrode that is disposed on said epitaxial structure and electrically connected to said first semiconductor layer; and
a second electrode that is disposed on said transparent current spreading unit;
wherein said transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer, said first transparent current spreading layer being disposed between and connected to said second electrode and said second transparent current spreading layer, said second transparent current spreading layer being connected to said second semiconductor layer, said first transparent current spreading layer being doped with aluminum and having a thickness that accounts for 0.5% to 33% of a thickness of said transparent current spreading unit, said second transparent current spreading layer having a thickness greater than that of said first transparent current spreading layer.

2. The light-emitting device as claimed in claim 1 , wherein said transparent current spreading unit includes indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), zinc oxide (ZnO) or combinations thereof.

3. The light-emitting device as claimed in claim 1 , wherein the thickness of said transparent current spreading unit ranges from 20 nm to 150 nm.

4. The light-emitting device as claimed in claim 1 , wherein the thickness of said first transparent current spreading layer ranges from 1 nm to 50 nm.

5. The light-emitting device as claimed in claim 1 , wherein the thickness of said second transparent current spreading layer ranges from 10 nm to 140 nm.

6. The light-emitting device as claimed in claim 1 , wherein the thickness of said second transparent current spreading layer is at least double of the thickness of said first transparent current spreading layer.

7. The light-emitting device as claimed in claim 1 , wherein said first transparent current spreading layer has an aluminum concentration that decreases in a direction from said second electrode to said second semiconductor layer.

8. The light-emitting device as claimed in claim 1 , further comprising a current blocking layer disposed between said second electrode and said second semiconductor layer.

9. The light-emitting device as claimed in claim 8 , wherein said current blocking layer is embedded in said transparent current spreading unit.

10. The light-emitting device as claimed in claim 9 , wherein said current blocking layer is embedded in said second transparent current spreading layer.

11. The light-emitting device as claimed in claim 1 , wherein said second transparent current spreading layer covers said second semiconductor layer.

12. The light-emitting device as claimed in claim 11 , wherein said second transparent current spreading layer is in direct contact with said second semiconductor layer.

13. The light-emitting device as claimed in claim 1 , wherein said light-emitting device has a length no greater than 200 μm.

14. The light-emitting device as claimed in claim 1 , further comprising an insulation layer that covers said epitaxial structure, said transparent current spreading unit, said first electrode and said second electrode, said insulation layer having a first opening that exposes said first electrode and a second opening that exposes said second electrode.

15. The light-emitting device as claimed in claim 14 , further includes a first pad and a second pad which are located on said insulation layer and respectively extend into said first opening and said second opening so as to be respectively and electrically connected to said first electrode and said second electrode.

16. The light-emitting device as claimed in claim 14 , wherein said insulation layer is made of one of an inorganic material and a dielectric material.

17. The light-emitting device as claimed in claim 16 , wherein said insulation layer is a distributed Bragg reflector.

18. The light-emitting device as claimed in claim 1 , further comprising a substrate which is a patterned substrate including a base and a plurality of protrusions disposed on said base.

19. The light-emitting device as claimed in claim 18 , wherein each of said protrusions contains at least one light extraction layer which has a refractive index lower than that of said base.

20. A light-emitting apparatus, comprising:
a circuit control component; and
a light source that is coupled to said circuit control component and that includes the light-emitting device as claimed in claim 1 .

Assignees

• Quanzhou Sanan Semiconductor Tech Co Ltd

Inventors

• Wang Huining
• Xia Hongwei
• Ma Quanyang
• Liu Shiwei
• Zhuo Jiali
• Yang Shuo
• Lin Su-Hui
• Chang Chung-Ying

Classifications

• H10W42/60

  protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10H20/8252

  characterised by the dopants · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/816 Primary

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title