High-linearity GaN HEMT radio frequency power device for improving transconductance under large signal

Patent metadata

Field	Value
Publication number	US-12396199-B2
Application number	US-202217959048-A
Country	US
Kind code	B2
Filing date	Oct 3, 2022
Priority date	Jan 28, 2022
Publication date	Aug 19, 2025
Grant date	Aug 19, 2025

Abstract

It is provided a high-linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal, including a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence. A source, a gate, and a drain are arranged on the protection layer. A first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer. The source, the gate, and the drain are configured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the second two-dimensional electron gas formed by the channel layer. In case of the large signal, electrons in the second two-dimensional electron gas flow into the first two-dimensional electron gas.

First claim

What is claimed is:

1. A gallium nitride (GaN) high electron mobility transistor (HEMT) radio frequency power device, comprising a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence, wherein a source, a gate, and a drain are arranged on the protection layer; a first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer; the source, the gate, and the drain are configured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the second two-dimensional electron gas formed by the channel layer; and in case of an output power of the GaN HEMT radio frequency power device being equal or greater than a predetermined power, electrons in the second two-dimensional electron gas flow into the first two-dimensional electron gas for making up for loss of electrons in the first two-dimensional electron gas.

2. The GaN HEMT radio frequency power device according to claim 1 , wherein the channel layer has a thickness of 100 nanometers.

3. The GaN HEMT radio frequency power device according to claim 2 , wherein the channel layer is made of a GaN material.

4. The GaN HEMT radio frequency power device according to claim 2 , wherein the first barrier layer and the second barrier layer are made of an AlGaN material.

5. The GaN HEMT radio frequency power device according to claim 2 , wherein the substrate layer is made of a SiC material.

6. The GaN HEMT radio frequency power device according to claim 2 , wherein the buffer layer is made of a GaN material.

7. The GaN HEMT radio frequency power device according to claim 2 , wherein an Si 3 N 4 dielectric material is filled between two of the source, the gate, and the drain.

8. The GaN HEMT radio frequency power device according to claim 1 , wherein the channel layer is made of a GaN material.

9. The GaN HEMT radio frequency power device according to claim 1 , wherein the first barrier layer and the second barrier layer are made of an AlGaN material.

10. The GaN HEMT radio frequency power device according to claim 1 , wherein the substrate layer is made of a SiC material.

11. The GaN HEMT radio frequency power device according to claim 1 , wherein the buffer layer is made of a GaN material.

12. The GaN HEMT radio frequency power device according to claim 1 , wherein an Si 3 N 4 dielectric material is filled between two of the source, the gate, and the drain.

Assignees

• Hdu Fuyang Electronic Information Res Institute Co Ltd
• Univ Hangzhou Dianzi

Inventors

• Cheng Zhiqun
• Le Chao

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10D30/4755

  having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title