Semiconductor device with back side protection mechanism

Patent metadata

Field	Value
Publication number	US-12394770-B2
Application number	US-202218559076-A
Country	US
Kind code	B2
Filing date	Apr 29, 2022
Priority date	May 6, 2021
Publication date	Aug 19, 2025
Grant date	Aug 19, 2025

Abstract

A semiconductor device, a method of operating the semiconductor device, and a method of fabricating the semiconductor device are disclosed. The semiconductor device comprises a substrate stack comprising two permanently bonded semiconductor bodies stacked in a depth direction that points perpendicularly from a front side towards a back side of the substrate stack, and which share a buried bonding interface. One of the semiconductor bodies, the protection body, comprises an active region with a light emitter at the buried bonding interface, and a light absorption region which is opaque for light emitted from the light emitter. Another of the semiconductor bodies, the circuit body, extends from the buried bonding interface to the front side, is transmissive for the light emitted from the light emitter, and comprises a light detector at the front side to provide a detector signal indicative of a detected light intensity of light emitted from the light emitter and transmitted through the circuit body. A driver unit of the semiconductor device is configured to drive operation of the light emitters using predetermined operation parameters.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate stack comprising two permanently bonded semiconductor bodies, which are stacked in a depth direction that points perpendicularly from a front side towards a back side of the substrate stack, and which share a buried bonding interface that extends at a respective distance from the front side and the back side and substantially parallel thereto,
wherein a first of the two semiconductor bodies, hereinafter a protection body, comprises an active region with one or more light emitters at the buried bonding interface, and a light absorption region, which follows the active region in the depth direction and is opaque for light emitted from the one or more light emitters;
wherein a second of the two semiconductor bodies, hereinafter a circuit body, extends from the buried bonding interface to the front side of the substrate stack, is transmissive for the light emitted from the one or more light emitters, and comprises at least one light detector at the front side of the substrate stack, which is configured to provide a detector signal indicative of a detected light intensity of light emitted from the one or more light emitters and transmitted through the circuit body; and
wherein the semiconductor device further comprises a driver unit that is configured to drive operation of the light emitters using predetermined operation parameters.

2. The semiconductor device of claim 1 , further comprising an evaluation unit that is configured to store expected-signal information indicative of a detector signal to be expected under operation of the one or more light emitters using the predetermined operation parameters, and that is configured to receive the detector signal from the at least one light detector, and that is configured to compare the received detector signal with the expected-signal information, and to provide an evaluation signal indicative of a result of the comparison.

3. The semiconductor device of claim 1 , wherein an electrical connection between the driver unit and the one or more light emitters comprises one or more trough-substrate vias extending from the front side of the substrate stack through the circuit body to a contact structure on the protection body, which is in electrical contact with the one or more light emitters.

4. The semiconductor device of claim 2 , further comprising:
a configuration unit, which is configured to drive operation of the driver unit, or the evaluation unit, or the driver unit and the evaluation unit in a configuration mode, upon a first startup of the semiconductor device after the semiconductor device has been fabricated and which is configured:
to set the predetermined operation parameters; and
to receive and store the detector signal provided by the at least one light detector as the expected-signal information.

5. The semiconductor device of claim 4 , wherein at least one of the driver unit, the evaluation unit and the configuration unit is provided as an integrated circuit on the circuit body.

6. The semiconductor device of claim 1 , wherein the buried bonding interface has an irregular three-dimensional shape that is configured to scatter the light emitted from the one or more light emitters in directions deviating from an unperturbed path of light propagation from a respective light emitter of the one or more light emitters.

7. The semiconductor device of claim 1 , wherein the at least one light detector comprises an active light detector region, which is formed by a p-n junction of a component arranged on the circuit body.

8. The semiconductor device of claim 7 , wherein the component comprising the p-n junction is a dedicated light detector which is configured and connected to perform only a light-detection function.

9. The semiconductor device of claim 7 , wherein the electronic component comprising the p-n junction is a non-dedicated light detector which is configured and connected to additionally perform an electronic function that is different from the light-detection function.

10. The semiconductor device of claim 1 , wherein the circuit body and the protection body are made of silicon.

11. The semiconductor device of claim 1 , wherein the one or more light emitters is made of Si, SiGe, InP, GaN or GaAs.

12. A method for operating a semiconductor device, comprising:
providing a semiconductor device of claim 1 ;
setting operation parameters to be used by the driver unit in driving operation of the one or more light emitters;
operating the driver unit to drive operation of the light emitters using the set operation parameters;
detecting light emitted from the light emitters with the at least one light detector; and
providing the detector signal indicative of the detected light intensity of the light emitted from the one or more light emitters and transmitted through the circuit body.

13. The method of claim 12 , wherein the semiconductor device further comprises an evaluation unit that is configured to store expected-signal information indicative of a detector signal to be expected under operation of the one or more light emitters using the predetermined operation parameters, and that is configured to receive the detector signal from the at least one light detector, and that is configured to compare the received detector signal with the expected-signal information, and to provide an evaluation signal indicative of a result of the comparison, and wherein the method further comprises:
storing the expected-signal information indicative of the detector signal to be expected under operation of the one or more light emitters using the set operation parameters;
operating the evaluation unit to receive the detector signal indicative of the detected light intensity of light emitted from the one or more light emitters and transmitted through the circuit body; and
operating the evaluation unit to compare the received detector signal with the expected-signal information and to provide the evaluation signal indicative of the result of the comparison.

14. The method of claim 13 , further comprising upon provision of an evaluation signal that is indicative of a significant deviation of the received detector signal from the expected-signal information, operating the evaluation unit to generate and provide a warning signal indicative of a detected optical side channel attack via the back side of the substrate stack.

15. A method of fabricating the semiconductor device of claim 1 , comprising:
fabricating the protection body comprising the active region with the one or more light emitters arranged at a bonding surface of the protection body, and comprising the light absorption region, which follows the active region in the depth direction and is opaque at least for light emitted from the one or more light emitters;
providing the circuit body, which is transmissive for the light emitted from the one or more light emitters and comprises the at least one light detector at the front side of the substrate stack, wherein the at least one light detector is configured to provide the detector signal indicative of the detected light intensity of light emitted from the one or more light emitters and transmitted through the circuit body; and
performing a permanent bonding process to bond the protection body with the bonding surface to the circuit body, to produce the substrate stack comprising the two permanently bonded semiconductor bodies, which are stacked in the depth direction that points perpendicularly from the front side towards the back side of the substrate stack, and which share the buried bonding interface th

Assignees

• Ihp Gmbh Innovations For High Performance Microelectronics/Leibniz Inst Fuer Innovative Mikroelektro
• Univ Berlin Tech
• Ihp Gmbh Innovations For High Performance Microelectronics/Leibniz Inst Fuer Innovativeihp Gmbh Inno

Inventors

• Herfurth Norbert
• Lisker Marco
• Amini Elham
• Boit Christian
• Seifert Jean-Pierre

Classifications

• H10W42/40

  protecting against tampering, e.g. unauthorised inspection or reverse engineering · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• G06F21/87

  by means of encapsulation, e.g. for integrated circuits · CPC title

• H10H20/882

  Scattering means (H10H20/82 takes precedence) · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title