Light emitting diode device

Patent metadata

Field	Value
Publication number	US-12389719-B2
Application number	US-202218049017-A
Country	US
Kind code	B2
Filing date	Oct 24, 2022
Priority date	Oct 26, 2021
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

An LED device includes an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, first and second electrodes that are disposed on the epitaxial layered structure, and an insulating structure. The first electrode includes a first body portion and a first extending portion connected together. The first extending portion includes a first part and multiple second parts. A projection of the first part on the first semiconductor layer does not overlap a projection of the insulating structure on the first semiconductor layer. The first part has a first sub-part and multiple second sub-parts. A projection of the first sub-part on the first semiconductor layer has a first length, and a projection of each of the second sub-parts on the first semiconductor layer independently has a second length measured in the same direction. The first length is greater than the second length.

First claim

What is claimed is:

1. A light emitting diode (LED) device, comprising:
an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer sequentially disposed in such an order along a first direction;
a first electrode that is disposed on said epitaxial layered structure and that is electrically connected to said first semiconductor layer, said first electrode including a first body portion and a first extending portion connected to said first body portion;
a second electrode that is disposed on said epitaxial layered structure and that is electrically connected to said second semiconductor layer, said second electrode including a second body portion and at least one second extending portion connected to said second body portion, said first extending portion extending from said first body portion toward said second body portion, and said second extending portion extending from said second body portion of said second electrode toward said first body portion; and
an insulating structure that is disposed between said first semiconductor layer and said first electrode, and between said second semiconductor layer and said second electrode, a portion of said insulating structure being disposed at a location corresponding to a region beneath where said second body portion and said second extending portion are connected,
wherein said first extending portion includes a first part and a plurality of second parts, a projection of said first part on said first semiconductor layer does not overlap a projection of said insulating structure on said first semiconductor layer, and a projection of each of said second parts entirely overlaps the projection of said insulating structure on said first semiconductor layer, said first part having a first sub-part that is located between said first body portion and one of said second parts closest to said first body portion, and a plurality of second sub-parts that are separated from one another by said second parts,
wherein a projection of said first sub-part on said first semiconductor layer has a first length measured in a second direction perpendicular to the first direction on said first semiconductor layer, and a projection of each of said second sub-parts on said first semiconductor layer independently has a second length measured in the second direction, and wherein the first length is greater than the second length, and
wherein a projection of each of said second parts on said first semiconductor layer independently has a third length measured in the second direction and a ratio of the second length to the third length ranges from 1:1.5 to 1:5.

2. The LED device as claimed in claim 1 , wherein a ratio of the first length to the second length is greater than or equal to 2:1.

3. The LED device as claimed in claim 1 , wherein the first length ranges from 30 μm to 70 μm and the second length ranges from 10 μm to 20 μm.

4. The LED device as claimed in claim 1 , wherein the third length ranges from 30 μm to 60 μm.

5. The LED device as claimed in claim 1 , wherein said second parts of said first extending portion are equally spaced apart from one another along the second direction.

6. The LED device as claimed in claim 1 , wherein a projection of each of said second parts on said first semiconductor layer has the same length measured in the second direction.

7. The LED device as claimed in claim 1 , wherein said insulating structure includes a first current blocking portion that is disposed between said first body portion and said first semiconductor layer, and a plurality of second current blocking portions that are disposed between said first extending portion of said first electrode and said first semiconductor layer and that are spaced apart from one another along the second direction, each of projections of said second parts of said first extending portion on said first semiconductor layer entirely overlapping a respective one of projections of said second current blocking portions on said first semiconductor layer.

8. The LED device as claimed in claim 7 , wherein said second current blocking portions are equally spaced apart from one another along the second direction.

9. The LED device as claimed in claim 7 , wherein the projections of said second current blocking portions on said first semiconductor layer have the same length measured in the second direction.

10. The LED device as claimed in claim 7 , wherein:
said second electrode includes two second extending portions that are connected to two opposite sides of said second body portion,
a projection of said first extending portion on said first semiconductor layer has a first width measured in a third direction that is perpendicular to the second direction on said first semiconductor layer and each of projections of said second extending portions on said first semiconductor layer has a second width measured in the third direction, the first width being greater than the second width, and
the projection of said first extending portion on said first semiconductor layer is located between the projections of said two second extending portions along the third direction.

11. The LED device as claimed in claim 7 , wherein:
said insulating structure further includes a third current blocking portion that is disposed between said second electrode and said second semiconductor layer,
a projection of said first extending portion on said first semiconductor layer has a longitudinal side in the second direction that is distanced from a longitudinal side of each of projections of said second current blocking portions on said first semiconductor layer in the second direction by a first minimum distance, and a projection of said second extending portion on said second semiconductor layer has a longitudinal side in the second direction that is distanced from a longitudinal side of said third current blocking portion in the second direction by a second minimum distance, and
the first minimum distance is smaller than the second minimum distance.

12. The LED device as claimed in claim 7 , wherein each of a projection of said first extending portion on said first semiconductor layer and a projection of said second extending portion on said first semiconductor layer has a width that is smaller than or equal to 10 μm measured in a third direction that is perpendicular to the second direction on said first semiconductor layer.

13. The LED device as claimed in claim 7 , wherein said second extending portion has a ball feature that is disposed at an end farthest from said second body portion, and wherein said ball feature of said second extending portion has a diameter greater than or equal to 3 μm.

14. The LED device as claimed in claim 1 , wherein:
said insulating structure includes a first insulating part that is disposed between said first body portion and said first semiconductor layer and a second insulating part that partially covers said epitaxial layered structure,
said first insulating part and said second insulating part are separated from each other by a first opening that exposes said first semiconductor layer, and said first body portion and said first sub-part of said first extending portion fills said first opening to be electrically connected to said first semiconductor layer, and
said second insulating part is formed with a plurality of second openings that expose said first semiconductor layer, each of said second sub-parts of said first extending portion is disposed on said second insulating part and fills a respective one of said second openings, a projection of said first part on said fi

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Wang Huining
• Cao Linhua
• Xia Hongwei
• He Chunlan
• Jiang Lili
• Lin Su-Hui
• Yang Renlong
• Chang Chung-Ying

Classifications

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/831 Primary

  characterised by their shape · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/835

  Reflective materials · CPC title