Solid-state image sensor

Patent metadata

Field	Value
Publication number	US-12389707-B2
Application number	US-202318327978-A
Country	US
Kind code	B2
Filing date	Jun 2, 2023
Priority date	Jul 26, 2018
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A solid-state image sensor includes a plurality of imaging element blocks 10 each configured from a plurality of imaging elements. Each of the imaging elements includes a first electrode, a charge accumulating electrode arranged in a spaced relation from the first electrode, a photoelectric conversion portion contacting with the first electrode and formed above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion portion. The first electrode and the charge accumulating electrode are provided on an interlayer insulating layer, and the first electrode is connected to a connection portion provided in the interlayer insulating layer.

First claim

What is claimed is:

1. A light detecting device, comprising:
first and second light detecting elements, wherein each of the first and second light detecting elements comprises:
a first electrode;
a charge accumulating electrode arranged in a spaced relation from the first electrode;
a photoelectric conversion layer disposed above the charge accumulating electrode with an insulating layer interposed therebetween; and
a second electrode disposed above the photoelectric conversion layer,
wherein the first electrode of the first light detecting element is connected to the first electrode of the second light detecting element via at least a connection portion,
wherein the first electrode of the first light detecting element is in contact with the photoelectric conversion layer, and
wherein the first electrode of the second light detecting element is in contact with the photoelectric conversion layer, wherein a light detecting element block is configured from P×Q (where, P≥2 and Q≥1) light detecting elements including P light detecting elements along a first direction and Q light detecting elements along a second direction different from the first direction; and
third and fourth light detecting elements,
wherein
P=2 and Q=2 are satisfied,
the first electrode of the first light detecting element is shared with the third light detecting element,
the first electrode of the second light detecting element is shared with the third light detecting element, and
the first electrodes are disposed along the second direction.

2. The light detecting device according to claim 1 , wherein the light detecting element block is surrounded by a continuous first isolation electrode.

3. The light detecting device according to claim 1 , wherein a second isolation electrode extending along the second direction is provided between two light detecting elements along the first direction.

4. The light detecting device according to claim 1 , wherein the first and second light detecting elements are arranged line-symmetrically with respect to a boundary line extending in a second direction between the first and second light detecting elements.

5. The light detecting device according to claim 1 , wherein, in a cross-sectional view, the first electrode of the first light detecting element and the first electrode of the second light detecting element are disposed at a first level and the connection portion is disposed at a second level, the first level being different than the second level.

6. The light detecting device according to claim 5 , wherein the first level is above the second level.

7. A light detecting device, comprising:
first and second light detecting elements, wherein each of the first and second light detecting elements comprises:
a first electrode;
a charge accumulating electrode arranged in a spaced relation from the first electrode;
a photoelectric conversion layer disposed above the charge accumulating electrode with an insulating layer interposed therebetween; and
a second electrode disposed above the photoelectric conversion layer,
wherein the first electrode of the first light detecting element is connected to the first electrode of the second light detecting element via at least a connection portion,
wherein the first electrode of the first light detecting element is in contact with the photoelectric conversion layer, and
wherein the first electrode of the second light detecting element is in contact with the photoelectric conversion layer, wherein a light detecting element block is configured from P×Q (where, P≥2 and Q≥1) light detecting elements including P light detecting elements along a first direction and Q light detecting elements along a second direction different from the first direction; and
third and fourth light detecting elements,
wherein
P=2 and Q=2 are satisfied,
the first electrode of the first light detecting element is shared with the third light detecting element,
the first electrode of the second light detecting element is shared with the third light detecting element, and
the first electrodes are disposed along the first direction.

8. The light detecting device according to claim 7 , wherein the light detecting element block is surrounded by a continuous first isolation electrode.

9. The light detecting device according to claim 2 , wherein a continuous second isolation electrode extending along the second direction from the first isolation electrode is provided between the two light detecting elements along the first direction.

10. The light detecting device according to claim 2 , wherein a potential of the first isolation electrode has a fixed value VES.

11. The light detecting device according to claim 8 , wherein a continuous second isolation electrode extending along the second direction from the first isolation electrode is provided between the two light detecting elements along the first direction.

12. The light detecting device according to claim 7 , wherein a second isolation electrode extending along the second direction is provided between two light detecting elements along the first direction.

13. The light detecting device according to claim 7 , wherein the first and second light detecting elements are arranged line-symmetrically with respect to a boundary line extending in a second direction between the first and second light detecting elements.

14. The light detecting device according to claim 8 , wherein a potential of the first isolation electrode has a fixed value VES.

15. The light detecting device according to claim 7 , wherein, in a cross-sectional view, the first electrode of the first light detecting element and the first electrode of the second light detecting element are disposed at a first level and the connection portion is disposed at a second level, the first level being different than the second level.

16. The light detecting device according to claim 15 , wherein the first level is above the second level.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Sato Yusuke

Classifications

• H10F39/1825 Primary

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H10K30/82

  Transparent electrodes, e.g. indium tin oxide [ITO] electrodes · CPC title

• H10K30/30

  comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains · CPC title

• H10K19/20

  comprising components having an active region that includes an inorganic semiconductor · CPC title

• H10K39/32

  Organic image sensors · CPC title