Gate driver circuit with a limiting function to maintain control voltage under a rated limit
US-11923832-B1 · Mar 5, 2024 · US
US12388434B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12388434-B2 |
| Application number | US-202318121528-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2023 |
| Priority date | Mar 14, 2023 |
| Publication date | Aug 12, 2025 |
| Grant date | Aug 12, 2025 |
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Aspects of the disclosure relate to a negative bias circuit for power device driving. An apparatus may include a power source, a gate impedance path, a capacitor in series with the gate impedance path, and a clamping circuit for a transistor gate.
Opening claim text (preview).
What is claimed is: 1. A circuit for power device driving comprising: a totem pole driver; a gate impedance path, wherein the totem pole driver is connected with the gate impedance path, wherein the gate impedance path comprises a first path comprising an On resistor and a second path in parallel with the first path, wherein the second path comprises an Off resistor positioned upstream of and in series with a diode, wherein the Off resistor is directly connected to a cathode of the diode; a capacitor in series with the gate impedance path; a clamping circuit, wherein the clamping circuit clamps voltage of a transistor gate and the clamping circuit comprises a plurality of Zener diodes in a back-to-back series arrangement; and the transistor gate. 2. The circuit of claim 1 , wherein the clamping circuit is positioned between the totem pole driver and the gate impedance path. 3. The circuit of claim 1 , wherein the clamping circuit is positioned between the gate impedance path and the transistor gate. 4. The circuit of claim 1 , wherein the transistor gate comprises a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) or n-channel MOSFET. 5. The circuit of claim 1 , wherein the transistor gate comprises a gallium nitride (GaN) transistor or insulated-gate bipolar transistor (IGBT). 6. The circuit of claim 1 , wherein the circuit is integrated into an electronic component of an electric vehicle, the electronic component comprising a direct current-direct current (DC-DC) converter. 7. The circuit of claim 1 , wherein the capacitor charges during an on-state of the circuit. 8. The circuit of claim 1 , wherein the circuit is integrated into an electronic component of an automobile. 9. The circuit of claim 1 , wherein the capacitor is positioned between a power source and the gate impedance path. 10. The circuit of claim 1 , wherein: the capacitor is positioned between a power source and the gate impedance path, and the clamping circuit is positioned between the gate impedance path and the transistor gate. 11. A circuit for power device driving comprising: a gate impedance path, wherein the gate impedance path comprises a first path comprising an On resistor and a second path in parallel with the first path, wherein the second path comprises an Off resistor positioned upstream of and in series with a diode, wherein the Off resistor is directly connected to a cathode of the diode; a capacitor in series with the gate impedance path; a clamping circuit, wherein the clamping circuit clamps voltage of a transistor gate and the clamping circuit comprises a plurality of Zener diodes in a back-to-back series arrangement; and the transistor gate. 12. The circuit of claim 11 , wherein the clamping circuit creates a charging current for the capacitor during an on-state of the circuit. 13. The circuit of claim 11 , wherein the clamping circuit is positioned between the gate impedance path and the transistor gate. 14. The circuit of claim 11 , wherein the transistor gate comprises a silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET). 15. The circuit of claim 11 , wherein the transistor gate comprises a gallium nitride (GaN) transistor. 16. The circuit of claim 11 , wherein the circuit is integrated into an electronic component of an electric vehicle, the electronic component comprising an on-board charger (OBC). 17. The circuit of claim 11 , wherein the circuit is integrated into an electronic component of an electric vehicle. 18. The circuit of claim 11 , wherein the circuit is integrated into an electronic component of an electric vehicle, the electronic component comprising an electronic inverter. 19. The circuit of claim 11 , wherein the capacitor is positioned between a power source and the gate impedance path. 20. The circuit of claim 11 , wherein: the capacitor is positioned between a power source and the gate impedance path, and the clamping circuit is positioned between the gate impedance path and the transistor gate.
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