Behavior model of photodetectors with a built-in lookup table

Patent metadata

Field	Value
Publication number	US-12387018-B2
Application number	US-202017084600-A
Country	US
Kind code	B2
Filing date	Oct 29, 2020
Priority date	Oct 29, 2020
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A method for simulating a photodetector behavior includes: receiving an input waveform for an photodetector; receiving an input optical power and a reverse bias voltage for the photodetector; searching for, in a lookup-table library, model parameters for a photodetector behavior model based on the input optical power and the reverse bias voltage; and outputting a second waveform from the photodetector behavior model, where the second waveform is indicative of an electrical response of the photodetector receiving the input waveform.

First claim

What is claimed is:

1. A method for simulating photodetector behavior, the method comprising:
receiving a modulated optical signal comprising an input waveform for a photodetector;
receiving an input optical power and a reverse bias voltage for the photodetector;
searching for, in a lookup-table library, model parameters for a photodetector behavior model responsive to receiving the input optical power and the reverse bias voltage, wherein the lookup-table library includes a plurality of lookup tables each of which is associated with a distinct optical power, and wherein searching for the model parameters comprises searching the look-up table library for a look-up table associated with an optical power corresponding to the input optical power and locating model parameters associated with a reverse bias voltage, in the look-up table, that corresponds to the received reverse bias voltage;
responsive to locating the model parameters, executing a hardware behavior modeling language that determines a DC current level, photo-generated carriers, and electrical parasitics for the photodetector behavior model using the located model parameters;
based on the DC current level, the photo-generated carriers, and the electrical parasitics, generating, using the photodetector behavior model, an electrical current representative of an electrical response of the photodetector, the electrical current comprising a second waveform indicative of an electrical response of the photodetector behavior of the photodetector;
delivering the electrical current to a receiver front-end circuit.

2. The method of claim 1 , wherein the photodetector behavior model comprises a level decision algorithm configured to obtain the input waveform and determine the DC current level for the photodetector.

3. The method of claim 2 , wherein the photodetector behavior model further comprises an optical-electrical conversion algorithm configured to determine the photo-generated carriers of the photodetector based on the DC current level, input optical power, the reverse bias voltage, and the model parameters.

4. The method of claim 3 , wherein the photodetector behavior model further comprises an electrical parasitics algorithm configured to determine the electrical parasitics of the photodetector.

5. The method of claim 1 , wherein the lookup-table library is obtained by simulation of one or more photodetectors or measurement of one or more physical photodetectors.

6. The method of claim 1 , wherein the model parameters for the photodetector include voltages up to an avalanche breakdown voltage of the photodetector.

7. The method of claim 1 , wherein the lookup-table library includes a plurality of sets of lookup tables, each set of lookup tables comprising one or more lookup tables, and each set being organized based a manufacturing process and an operating temperature for the photodetector.

8. The method of claim 7 , wherein the lookup-table library further includes a coefficient table storing coefficients for different manufacturing processes and operating temperatures for the photodetector.

9. The method of claim 1 , wherein the model parameters comprises at least one of: a multiplication factor, a responsivity, a resonance frequency, a Q-factor, and parasitic capacitance for the photodetector behavior model.

10. A non-transitory computer-readable storage medium storing instructions executable by one or more processors to cause the one or more processors to perform operations including:
receiving a modulated optical signal comprising an input waveform for a photodetector;
receiving an input optical power and a reverse bias voltage for the photodetector;
searching for, in a lookup-table library, model parameters for a photodetector behavior model responsive to receiving the input optical power and the reverse bias voltage, wherein the lookup-table library includes a plurality of lookup tables each of which is associated with a distinct optical power, and wherein searching for the model parameters comprises searching the look-up table library for a look-up table associated with an optical power corresponding to the input optical power and locating model parameters associated with a reverse bias voltage, in the look-up table, that corresponds to the received reverse bias voltage;
responsive to locating the model parameters, executing a hardware behavior modeling language that determines a DC current level, photo-generated carriers, and electrical parasitics for the photodetector behavior model using the located model parameters; and
based on the DC current level, the photo-generated carriers, and the electrical parasitics, generating an electrical current using the photodetector behavior model, the electrical current comprising a second waveform indicative of an electrical response of the photodetector.

11. The non-transitory computer-readable storage medium of claim 10 , wherein the photodetector behavior model comprises a level decision algorithm configured to obtain the input waveform and determine the DC current level for the photodetector.

12. The non-transitory computer-readable storage medium of claim 11 , wherein the photodetector behavior model further comprises an optical-electrical conversion algorithm configured to determine the photo-generated carriers of the photodetector based on the DC current level, input optical power, the reverse bias voltage, and the model parameters.

13. The non-transitory computer-readable storage medium of claim 12 , wherein the photodetector behavior model further comprises an electrical parasitics algorithm configured to determine the electrical parasitics of the photodetector.

14. The non-transitory computer-readable storage medium of claim 10 , wherein the model parameters for the photodetector include voltages up to an avalanche breakdown voltage of the photodetector.

15. The non-transitory computer-readable storage medium of claim 10 , wherein the lookup-table library includes a plurality of sets of lookup tables, each set of lookup tables comprising one or more lookup tables, and each set being organized based a manufacturing process and an operating temperature for the photodetector.

16. The non-transitory computer-readable storage medium of claim 15 , wherein the lookup-table library further includes a coefficient table storing coefficients for different manufacturing processes and operating temperatures for the photodetector.

17. An apparatus, comprising:
one or more processors; and
a memory storing instructions executable by the one or more processors to cause the one or more processors to perform operations including:
receiving a modulated optical signal comprising an input waveform for a photodetector;
receiving an input optical power and a reverse bias voltage for the photodetector;
searching for, in a lookup-table library, model parameters for a photodetector behavior model responsive to receiving the input optical power and the reverse bias voltage, wherein the lookup-table library includes a plurality of lookup tables each of which is associated with a distinct optical power, and wherein searching for the model parameters comprises searching the look-up table library for a look-up table associated with an optical power corresponding to the input optical power and locating model parameters associated with a reverse bias voltage, in the look-up table, that corresponds to the received reverse bias voltage;
responsive to locating the model parameters, executing a hardware behavior modeling language that determines a DC current level, photo-generated carriers, and e

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Youn Jinsung
• Zeng Xiaoge
• Seyedi Mir Ashkan

Classifications

• G06F16/9017

  using directory or table look-up (use of a directory or look-up table in file systems G06F16/13) · CPC title

• G01J2001/4466

  Avalanche · CPC title

• G01J1/44

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• G06F2119/18

  Manufacturability analysis or optimisation for manufacturability · CPC title

• G06F2119/08

  Thermal analysis or thermal optimisation · CPC title