Resist underlayer film-forming composition using carbon-oxygen double bond

Patent metadata

Field	Value
Publication number	US-12386262-B2
Application number	US-201917055148-A
Country	US
Kind code	B2
Filing date	May 21, 2019
Priority date	May 25, 2018
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition comprising a solvent and a reaction product of a C6-C60 aromatic heterocyclic compound and a carbon-oxygen double bond contained in a C3-C60 oxygen-containing compound,
the oxygen-containing compound having one partial structure —COO— in the molecule,
wherein the oxygen-containing compound is represented by the following formula (2):
R 21 —COO—R 22   Formula (2)

wherein
R 21 is
a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom, and
R 22 is hydrogen, a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom;

the reaction product being such that a same single carbon atom in the oxygen-containing compound connects two molecules of the aromatic heterocyclic compound.

2. A resist underlayer film-forming composition comprising a solvent and a reaction product of a C6-C60 aromatic heterocyclic compound and a carbon-oxygen double bond contained in a C3-C60 oxygen-containing compound,
the oxygen-containing compound having one partial structure —CON< in the molecule,
wherein the oxygen-containing compound is represented by the following formula (1):

wherein
R 11 and R 12 are each a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom, optionally condensed with a C6-C20 aryl group, and optionally substituted with an oxo group or a C6-C20 cycloalkyl group, R 11 and R 12 may be bonded to each other to form a ring, and
R 13 is hydrogen, a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom;

the reaction product being such that a same single carbon atom in the oxygen-containing compound connects two molecules of the aromatic heterocyclic compound.

3. The resist underlayer film-forming composition according to claim 1 , wherein the aromatic heterocyclic compound contains one or more benzene rings, naphthalene rings, anthracene rings or pyrene rings, or a combination thereof.

4. The resist underlayer film-forming composition according to claim 1 , wherein the aromatic heterocyclic compound contains two or more benzene rings, naphthalene rings, anthracene rings or pyrene rings, or a combination thereof.

5. The resist underlayer film-forming composition according to claim 1 , further comprising a crosslinking agent.

6. The resist underlayer film-forming composition according to claim 1 , further comprising an acid and/or an acid generator.

7. The resist underlayer film-forming composition according to claim 1 , wherein the solvent has a boiling point of not less than 160° C.

8. A resist underlayer film, which is a baked product of a coating film comprising the resist underlayer film-forming composition according to claim 1 .

9. A method for manufacturing a semiconductor device, comprising the steps of:
forming a resist underlayer film on a semiconductor substrate using the resist underlayer film-forming composition according to claim 1 ,
forming a resist film thereon,
forming a resist pattern by light or electron beam irradiation and development,
etching the underlayer film through the resist pattern, and
processing the semiconductor substrate through the underlayer film patterned.

10. A resist underlayer film-forming composition comprising a solvent and a reaction product of a C6-C60 aromatic compound and a carbon-oxygen double bond contained in a C3-C60 oxygen-containing compound that is selected from the group consisting of
(a) C3-C60 oxygen-containing compounds represented by the following formula (1):

wherein
R 11 and R 12 are each a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom, optionally condensed with a C6-C20 aryl group, and optionally substituted with an oxo group or a C6-C20 cycloalkyl group, R 11 and R 12 may be bonded to each other to form a ring, and
R 13 is a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom,

(b) isatin,
(c) 4,4-pentamethylene-2-pyrrolidone, and
(d) laurylamide,
the C6-C60 aromatic compound being:
(a) a monocyclic compound,
(b) a condensed ring compound,
(c) a heterocyclic compound,
(d) a compound composed of any of the compounds (a) to (c) linked together via a single bond between their aromatic rings, except for biphenyl, or
(e) a compound composed of any of the compounds (a) to (d) linked together via a spacer selected from the group consisting of —CH—, —(CH 2 ) n -(where n=1 to 20), —CH═CH—, —C≡C—, —N═N—, —NH—, —NHR—, —NHCO—, —NRCO—, —S—, —COO—, —O—, —CO— and —CH═N—, between their aromatic rings, and

the reaction product being such that a same single carbon atom in the oxygen-containing compound connects two molecules of the aromatic compound.

11. The resist underlayer film-forming composition according to claim 10 , wherein the aromatic compound contains one or more benzene rings, naphthalene rings, anthracene rings or pyrene rings, or a combination thereof.

12. The resist underlayer film-forming composition according to claim 10 , wherein the aromatic compound contains two or more benzene rings, naphthalene rings, anthracene rings or pyrene rings, or a combination thereof.

13. The resist underlayer film-forming composition according to claim 10 , further comprising a crosslinking agent.

14. The resist underlayer film-forming composition according to claim 10 , further comprising an acid and/or an acid generator.

15. The resist underlayer film-forming composition according to claim 10 , wherein the solvent has a boiling point of not less than 160° C.

16. A resist underlayer film, which is a baked product of a coating film comprising the resist underlayer film-forming composition according to claim 10 .

17. A resist underlayer film-forming composition comprising a solvent and a reaction product of a C6-C60 aromatic compound and a carbon-oxygen double bond contained in a C3-C60 oxygen-containing compound represented by the following formula (2):
R 21 —COO—R 22   Formula (2)

wherein
R 21 is a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom, and
R 22 is a C6-C20 aryl group, or a C1-C20 alkyl group which alkyl group is optionally interrupted with an oxygen atom or a sulfur atom,

the reaction product being such that a same single carbon atom in the oxygen-containing compound connects two molecules of the aromatic compound.

18. The resist underlayer film-forming composition according to claim 17 , wherein the aromatic compound contains one or more benzene rings, naphthalene rings, anthracene rings or pyrene rings, or a combination thereof.

19. The resist underlayer film-forming composition according to claim 17 , wherein the aromatic compound contains two or more benzene rings, naphthalene rings, anthracene rings or pyrene rings, or a combination thereof.

20. The resist underlayer film-forming composition according to claim 17 , further comprising a crosslinking agent.

21. The resist under

Assignees

• Nissan Chemical Corp

Inventors

• Tokunaga Hikaru
• Ogata Hiroto
• Hashimoto Keisuke
• Nakajima Makoto

Classifications

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

• G03F7/168

  Finishing the coated layer, e.g. drying, baking, soaking · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• C08G2261/3241

  containing one or more nitrogen atoms as the only heteroatom, e.g. carbazole · CPC title