Method for uniform growth of bi-layer transition metal dichalcogenide continuous films

Patent metadata

Field	Value
Publication number	US-12385140-B2
Application number	US-202217724949-A
Country	US
Kind code	B2
Filing date	Apr 20, 2022
Priority date	Feb 25, 2022
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.

First claim

What is claimed is:

1. A bi-layer transition metal dichalcogenide (TMDC) continuous film comprising a substrate and a bi-layered crystal grain comprising top and bottom layers of domains synchronously nucleated on a surface of the substrate; wherein the substrate contains high surface steps with a height no less than 0.8 nm; the top and bottom layers at the high surface steps of the substrate have equal size, equal growth speed, and aligned edges; a lateral dimension of the bi-layer TMDC continuous film reaches a centimeter level or above.

2. The bi-layer transition metal dichalcogenide continuous film according to claim 1 , wherein TMDC in the bi-layer TMDC continuous film is molybdenum disulfide, tungsten disulfide, molybdenum diselenide or tungsten diselenide.

3. The bi-layer transition metal dichalcogenide continuous film according to claim 1 , wherein the substrate is sapphire, and four or more layers of Al—O—Al atomic steps are required and distributed on the surface; the height atomic step of the sapphire is equal to or more than 0.8 nm.

4. The bi-layer transition metal dichalcogenide continuous film according to claim 3 , wherein miscut angle of the sapphire substrate is 0.2-10°.

Assignees

• Nanjing University

Inventors

• Wang Xinran
• Liu Lei
• Li Taotao
• Shi Yi

Classifications

• C23C16/305 Primary

  Sulfides, selenides, or tellurides · CPC title

• C23C16/0209

  by heating · CPC title

• C30B25/16

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B29/48

  AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te} · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title