Material for forming organic film, patterning process, and polymer

Patent metadata

Field	Value
Publication number	US-12379663-B2
Application number	US-202117549987-A
Country	US
Kind code	B2
Filing date	Dec 14, 2021
Priority date	Dec 25, 2020
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

A material for forming an organic film contains (A) a polymer having a repeating unit shown by the following general formula (1), and (B) an organic solvent. In the general formula (1), AR1, AR2, AR3, and AR4 each represent a benzene ring or a naphthalene ring; W1 represents a tetravalent organic group having 6 to 70 carbon atoms and at least one or more aromatic rings; and W2 represents a divalent organic group having 1 to 50 carbon atoms. An object of the present invention is to provide: a material for forming an organic film to enable high etching resistance and excellent twisting resistance without impairing the resin-derived carbon content; a patterning process using this material; and a polymer suitable for such a material for forming an organic film.

First claim

The invention claimed is:

1. A material for forming an organic film, comprising:
(A) a polymer comprising a repeating unit shown by the following general formula (1); and
(B) an organic solvent,

wherein AR1, AR2, AR3, and AR4 each represent a benzene ring or a naphthalene ring; W1 represents a tetravalent organic group having 6 to 70 carbon atoms and at least one or more aromatic rings; and W2 represents a divalent organic group having 1 to 50 carbon atoms.

2. The material for forming an organic film according to claim 1 , wherein
the polymer is a polymer comprising a repeating unit shown by the following general formula (2) or (3),

wherein W2, AR1, AR2, AR3, and AR4 are as defined above;
and AR5 represents a benzene ring or a naphthalene ring, and

wherein W2, AR1, AR2, AR3, and AR4 are as defined above;
W3 represents a single bond or a divalent organic group having 1 to 58 carbon atoms; and AR6 and AR7 each represent a benzene ring or a naphthalene ring.

3. The material for forming an organic film according to claim 1 , wherein
the polymer is a polymer comprising a repeating unit shown by the following general formula (4) or (5),

wherein AR5 represents a benzene ring or a naphthalene ring, and

wherein W3 represents a single bond or a divalent organic group having 1 to 58 carbon atoms; and AR6 and AR7 each represent a benzene ring or a naphthalene ring.

4. The material for forming an organic film according to claim 1 , wherein
the polymer comprises a terminal structure shown by any of the following general formula (6) or (7),

wherein AR8 and AR9 each represent a benzene ring or a naphthalene ring; R1 represents a hydrogen atom or a monovalent alkyl group having 1 to 10 carbon atoms; and
* represents an attachment point to the polymer, and

wherein AR10 and AR11 each represent a benzene ring or a naphthalene ring; R2 represents any in the following formula (8); “n” represents an integer of 1 to 4; W4 represents an organic group with a valency of n+2 having 6 to 70 carbon atoms and at least one or more aromatic rings; and * represents an attachment point to the polymer,

wherein a broken line represents a bonding arm.

5. The material for forming an organic film according to claim 1 , wherein the polymer has a weight-average molecular weight of 500 to 5000.

6. The material for forming an organic film according to claim 1 , wherein the organic solvent (B) is a mixture of one or more organic solvents each having a boiling point of lower than 180° C. and one or more organic solvents each having a boiling point of 180° C. or higher.

7. The material for forming an organic film according to claim 1 , wherein the material for forming an organic film further comprises one or more of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, and (F) a plasticizer.

8. A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed;
forming a silicon-containing resist underlayer film by using a silicon-containing resist underlayer film material on the organic film;
forming a resist upper layer film by using a photoresist composition on the silicon-containing resist underlayer film;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the silicon-containing resist underlayer film by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the silicon-containing resist underlayer film having the transferred pattern as a mask; and
further forming the pattern in the substrate to be processed by etching while using the organic film having the transferred pattern as a mask.

9. A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed;
forming a silicon-containing resist underlayer film by using a silicon-containing resist underlayer film material on the organic film;
forming an organic antireflective coating film (BARC) on the silicon-containing resist underlayer film;
forming a resist upper layer film by using a photoresist composition on the BARC, so that a 4-layered film structure is constructed;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the BARC film and the silicon-containing resist underlayer film by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the silicon-containing resist underlayer film having the transferred pattern as a mask; and
further forming the pattern in the substrate to be processed by etching the substrate to be processed while using the organic film having the transferred pattern as a mask.

10. A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed;
forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;
forming a resist upper layer film by using a photoresist composition on the inorganic hard mask;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the inorganic hard mask by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and
further forming the pattern in the substrate to be processed by etching the substrate to be processed while using the organic film having the transferred pattern as a mask.

11. A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed;
forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;
forming an organic antireflective coating film (BARC) on the inorganic hard mask;
forming a resist upper layer film by using a photoresist composition on the BARC, so that a 4-layered film structure is constructed;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the BARC film and the inorganic hard mask by etching while using the resist upper layer film having the formed pattern as a mask;
transferring the pattern to the organic film by etching while using the i

Assignees

• Shinetsu Chemical Co

Inventors

• Kori Daisuke
• Tachibana Seiichiro
• Nonaka Shiori
• Ogihara Tsutomu

Classifications

• C08F38/00

  Homopolymers and copolymers of compounds having one or more carbon-to-carbon triple bonds · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/094 Primary

  Multilayer resist systems, e.g. planarising layers · CPC title

• C08G65/4081

  forming cyclic polymers or oligomers · CPC title