Method of preparing multicomponent nanopattern

Patent metadata

Field	Value
Publication number	US-12378661-B2
Application number	US-201916584239-A
Country	US
Kind code	B2
Filing date	Sep 26, 2019
Priority date	Oct 2, 2018
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

Disclosed is a method of producing a multicomponent nanopattern having a regular array and allowing a variety of combinations of compositions by depositing a film including a multicomponent material on a substrate having a prepattern formed thereon and then conducting ion-etching thereon twice. The method can be utilized in a variety of applications requiring considerably regularly arranged multicomponent nanostructures such as transistors, organic optoelectronic devices, catalysts and gas sensors.

First claim

What is claimed is:

1. A method of preparing a multicomponent nanopattern of mixture of multicomponent material comprising sequential steps (a) and (b):
(a) depositing a film including homogeneous mixture of a multicomponent material selected from the group consisting of two or more polymers; two or more metals; two or more metal oxides; and two or more metal sulfides, on a substrate having a prepattern formed thereon; and
(b) forming the multicomponent nanopattern of mixture of multicomponent material by re-depositing the mixture of the multicomponent material from the film deposited in step (a) on a side surface of the prepattern through an ion etching process,
wherein steps (a) and (b) are carried out to form a multilayer structure of layers of the homogeneous mixture of the multicomponent material on the substrate prepattern and side surface of the prepattern,
wherein the film deposited in step (a) for each layer has a film thickness of 5 nm or less,
wherein the metal is selected from the group consisting of Au, Ag, Cu, Al, Ni, Pt, Pd, Sn, Mo, Ti, Cr, Mn, Fe, Co, Zn, In, W, Ir and Si, and
wherein multicomponent material is mixed using secondary sputtering phenomenon and internal composition and structure of resulting nanopattern is controlled according to a film composition before the ion etching process.

2. The method of claim 1 , wherein the prepattern of step (a) is formed by coating a prepattern material on the substrate and conducting lithography or imprinting thereon.

3. The method of claim 1 , further comprising (c) removing a residual layer of the film of the multicomponent material through an ion etching process, after step (b).

4. The method of claim 1 , wherein the ion etching process of step (b) is conducted by milling or sputtering.

5. The method of claim 1 , wherein the ion etching process is conducted by forming a plasma using a gas at a pressure of 0.001 mTorr to 700 Torr, and accelerating the plasma to 100 to 2,000 V.

6. The method according to claim 1 , wherein the metal is a two-component material selected from the group consisting of Au—Cu, Au—Pt, Au—Ni, Au—Ag, Au—Pd, Pd—Ag, Ni—Sn, Mo—Ni, Au—Al, Au—Sn, Au—Mo, Au—Ti, Au—Cr, Au—Mn, Au—Fe, Au—Co, Au—Zn, Au—In, Au—W, Au—Ir, Au—Si, Ag—Cu, Ag—Al, Ag—Ni, Ag—Pt, Ag—Pd, Ag—Sn, Ag—Mo, Ag—Ti, Ag—Cr, Ag—Mn, Ag—Fe, Ag—Zn, Ag—In, Ag—W, Ag—Ir and Ag—Si, or a three-component material selected from the group consisting of Au—Ag—Cu, Au—Cu—Pt, Au—Ag—Pt, Au—Ag—Pd, Au—Cu—Pd, Ag—Cu—Pt and Ag—Cu—Pd.

7. The method of claim 1 , wherein the multicomponent material is a combination of two to six components.

8. The method of claim 1 , wherein the prepattern is polystyrene, chitosan, polyvinyl alcohol, polymethylmethacrylate (PMMA), polyvinyl pyrrolidone, photoresist (PR), or a mixture thereof.

9. The method according to claim 1 , wherein the multilayer structure has a film thickness of 10 nm to 500 nm.

10. The method of claim 1 , wherein the multicomponent material is a combination of three to six components.

11. The method of claim 1 , wherein the multilayer structure on the substrate prepattern and side surface of the prepattern is a sandwich structure.

Assignees

• Korea Advanced Inst Sci & Tech

Inventors

• Jung Hee-Tae
• Jung Woo Bin

Classifications

• B32B2307/7376

  Thickness · CPC title

• B01J23/896

  with gallium, indium or thallium · CPC title

• B01J23/8953

  with zinc, cadmium or mercury · CPC title

• B01J23/8986

  with manganese, technetium or rhenium · CPC title

• B01J23/8993

  with chromium, molybdenum or tungsten · CPC title