Metal material, method of producing metal material, method of passivating semiconductor processing apparatus, method of manufacturing semiconductor device, and method of manufacturing filled container

Patent metadata

Field	Value
Publication number	US-12378659-B2
Application number	US-202017790839-A
Country	US
Kind code	B2
Filing date	Nov 19, 2020
Priority date	Jan 6, 2020
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

The metal material of the present disclosure includes: a metal base; and a film provided on a surface of the metal base and containing a fluorine-containing molybdenum compound, the fluorine-containing molybdenum compound being represented by the formula MoOxFy wherein x is a number from 0 to 2 and y is a number from 2 to 5.

First claim

The invention claimed is:

1. A metal material comprising:
a metal base; and
a film provided on a surface of the metal base and containing a fluorine-containing molybdenum compound,
the fluorine-containing molybdenum compound being represented by the formula MoO x F y wherein x is a number from 0 to 2 and y is a number from 2 to 5.

2. The metal material according to claim 1 ,
wherein the metal base is made of at least one selected from the group consisting of a stainless steel, a manganese steel, aluminum, an aluminum alloy, nickel, and a nickel alloy.

3. The metal material according to claim 1 ,
wherein the film has a thickness of 1 nm or greater and 20 μm or smaller.

4. The metal material according to claim 1 ,
wherein the metal base is a pipe, a storage container, or a chamber, and
the film is provided on an inner surface of the metal base.

5. A method of producing the metal material according to claim 1 , the method comprising
exposing a surface of the metal base to a MoF 6 -containing gas at a temperature of 300° C. or lower to form the film containing the fluorine-containing molybdenum compound on the surface of the metal base.

6. The method of producing a metal material according to claim 5 ,
wherein the gas has a MoF 6 concentration of 5 vol % or higher and 100 vol % or lower.

7. A method of passivating a semiconductor processing device including a chamber made of the metal material according to claim 1 and a pipe connected to the chamber, the method comprising
exposing an inner surface of the chamber and an inner surface of the pipe to a MoF 6 -containing gas at a temperature of 300° C. or lower to form the film containing the fluorine-containing molybdenum compound on the inner surface of the chamber.

8. The method of passivating a semiconductor processing device according to claim 7 ,
wherein the pipe is made of a metal material, and
the film is formed also on the inner surface of the pipe.

9. A method of producing a semiconductor device, comprising:
performing the method of passivating a semiconductor processing device according to claim 7 ; and
passing a MoF 6 -containing gas through the semiconductor processing device.

10. A method of producing a filled container, comprising:
exposing an inner surface of a storage container made of the metal material according to claim 1 to a MoF 6 -containing gas at a temperature of 300°° C. or lower to form the film containing the fluorine-containing molybdenum compound on the inner surface of the storage container; and
filling the storage container with a MoF 6 -containing gas.

11. The metal material according to claim 1 ,
wherein the film has a thickness of 1 nm or greater and 1 μm or smaller.

Assignees

• Central Glass Co Ltd

Inventors

• Kikuchi Akiou
• Nomura Ryoma
• Yoshimura Ryota

Classifications

• F17C2203/0607

  Coatings · CPC title

• F17C1/10

  with provision for protection against corrosion, e.g. due to gaseous acid ({F17C1/14, F17C1/16 take precedence}; inhibiting corrosion of metallic material or incrustation in general C23F) · CPC title

• H01J37/32495

  Means for protecting the vessel against plasma · CPC title

• C23C16/4404

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• C23C26/00

  Coating not provided for in groups C23C2/00 - C23C24/00 · CPC title