Micro light-emitting diode and micro light-emitting device with rough surface and protection layer

Patent metadata

Field	Value
Publication number	US-12376428-B2
Application number	US-202217662367-A
Country	US
Kind code	B2
Filing date	May 6, 2022
Priority date	May 10, 2021
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

A micro light-emitting diode includes a semiconductor stacked structure. The semiconductor stacked structure includes a first surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface. The first surface has a roughened portion, and the lateral surface is smooth. A micro light-emitting device including the micro light-emitting diode, and a display device including the micro light-emitting diode are also disclosed.

First claim

What is claimed is:

1. A micro light-emitting diode, comprising:
a semiconductor stacked structure which includes
a first surface,
a second surface opposite to said first surface, and
a lateral surface connecting said first surface and said second surface,

wherein:
said first surface has a roughened portion, and said lateral surface is smooth;
said micro light-emitting diode further includes an insulating layer covering at least a portion of said second surface and at least a portion of said lateral surface of said semiconductor stacked structure;
a portion of said insulating layer that covers said lateral surface of said semiconductor stacked structure includes a lateral part and a horizontal part;
an intersection of said lateral part and said horizontal part is located in a groove portion of said lateral surface of said semiconductor stacked structure;
said intersection is distal from said roughened portion of said semiconductor stacked structure; and
a distance between said intersection and an outermost peripheral edge of said semiconductor stacked structure is not less than 0.5 μm.

2. The micro light-emitting diode of claim 1 , wherein said first surface further includes a smooth portion which surrounds said roughened portion, and said roughened portion of said first surface is recessed toward said second surface.

3. The micro light-emitting diode of claim 1 , wherein said micro light-emitting diode has a width ranging from 2 μm to 100 μm and has a length ranging from 2 μm to 100 μm.

4. The micro light-emitting diode of claim 1 , wherein a distance between a periphery of said roughened portion of said first surface and a periphery of said first surface ranges from 0.5 μm to 1 μm.

5. The micro light-emitting diode of claim 1 , wherein:
said semiconductor stacked structure has a first portion and a second portion connected to said first portion;
said first portion has said first surface of said semiconductor stacked structure, and said second portion has said second surface of said semiconductor stacked structure; and
said first portion has a maximal width that is greater than a maximal width of said second portion.

6. The micro light-emitting diode of claim 5 , wherein said first portion has a thickness not less than 0.5 μm.

7. The micro light-emitting diode of claim 1 , wherein said insulating layer is a distributed Bragg reflection mirror, said distributed Bragg reflection mirror including titanium oxide.

8. The micro light-emitting diode of claim 1 , further comprising a protection layer covering at least a part of said smooth portion, said protection layer being made of one of silicon oxide, silicon nitride, aluminum oxide, and combinations thereof.

9. The micro light-emitting diode of claim 8 , wherein said protection layer has a thickness ranging from 100 Å to 20000 Å.

10. The micro light-emitting diode of claim 1 , wherein said insulating layer includes titanium oxide.

11. The micro light-emitting diode of claim 1 , wherein said insulating layer completely covers said second surface of said semiconductor stacked structure and a lateral surface of said second portion of said semiconductor stacked structure.

12. The micro light-emitting diode of claim 1 , further comprising a protection layer that covers a lateral surface of said first portion of said semiconductor stacked structure.

13. The micro light-emitting diode of claim 1 , further comprising a protection layer, said protection layer covering a portion of said first surface outside of said roughened portion, wherein said protection layer that covers said first surface has a width ranging from 0.5 μm to 1 μm.

14. The micro light-emitting diode of claim 12 , wherein said protection layer is made from one of silicon oxide, silicon nitride, aluminum oxide, and combinations thereof.

15. The micro light-emitting diode of claim 12 , wherein said protection layer has a width ranging from 100 Å to 20000 Å.

16. A micro light-emitting device, comprising:
a substrate; and
at least one micro light-emitting diode which includes a semiconductor stacked structure having a first surface, a second surface opposite to said first surface, and a lateral surface that connects said first surface and said second surface,
wherein:
said first surface includes a roughened portion, and said lateral surface is smooth; and
a distance between said roughened portion of said first surface and a periphery of said first surface ranges from 0.5 μm to 1 μm.

17. The micro light-emitting device of claim 16 , wherein said first surface further includes a smooth portion which surrounds said roughened portion, and said roughened portion is recessed toward said second surface.

18. The micro light-emitting device of claim 16 , wherein said substrate includes one of a metal substrate, a sapphire substrate, a glass substrate, a silicon substrate, a silicon carbide substrate, a supporting film, and combinations thereof.

19. The micro light-emitting device of claim 16 , wherein:
said substrate has a supporting surface for supporting said at least one micro light-emitting diode;
said micro light-emitting device further includes an adhesive film disposed between said supporting surface and said at least one micro light-emitting diode; and
said adhesive film has a width smaller than a maximal width of said semiconductor stacked structure.

20. The micro light-emitting device of claim 16 , wherein:
said semiconductor stacked structure further includes a first portion, and a second portion connected to said first portion;
said first portion is located proximate to said first surface of said semiconductor stacked structure, and said second portion is located distal from said first surface of said semiconductor stacked structure; and
said first portion has a maximal width that is greater than a maximal width of said second portion.

21. A display device, comprising:
a substrate; and
at least one micro light-emitting diode which includes a semiconductor stacked structure having a first surface, a second surface opposite to said first surface, and a lateral surface that connects said first surface and said second surface,
wherein:
said first surface includes a roughened portion, and said lateral surface is smooth; and
a distance between said roughened portion of said first surface and a periphery of said first surface ranges from 0.5 μm to 1 μm.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Wu Zheng
• Lee Chia-En
• Yang Shuo

Classifications

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title