Spin-charge conversion based spin logic device

Patent metadata

Field	Value
Publication number	US-12375084-B2
Application number	US-202318151678-A
Country	US
Kind code	B2
Filing date	Jan 9, 2023
Priority date	Nov 15, 2022
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

A spin logic device includes a first stage unit in which one side of the first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel. A resistor for outputting steady current as the first output current may be connected between nodes on opposite ends of the second conductive channel.

First claim

What is claimed is:

1. A spin logic device comprising:
a first stage unit in which one side of a first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel,
wherein
a resistor for outputting steady current as the first output current is connected between nodes on opposite ends of the second conductive channel.

2. The spin logic device as set forth in claim 1 , wherein
when the input current is applied through the first conductive channel, spin current generated depending on magnetization of the first magnetic layer is applied to the first spin-charge conversion layer, and as spin-charge conversion occurs, the first output current is induced in the second conductive channel.

3. A spin logic device comprising:
a first stage unit in which one side of a first magnetic layer is connected to an upper end of a first spin-charge conversion layer, a first dielectric layer is connected to a lower end of the other side of the first magnetic layer, a first conductive channel for receiving input current is connected to a lower end of the first dielectric layer, a first input portion formed of a conductor for receiving a first drive voltage is connected to an upper end of one side of the first magnetic layer, a second conductive channel for outputting first output current is connected to a lower end of the first spin-charge conversion layer, and a first conductor having a ground is connected to a lower end of the second conductive channel; and
a second stage unit in which one side of a second magnetic layer is connected to an upper end of a second spin-charge conversion layer, a second dielectric layer is connected to a lower end of the other side of the second magnetic layer, the second conductive channel is connected to a lower end of the second dielectric layer, a second input portion formed of a conductor for receiving a second drive voltage is connected to an upper end of one side of the second magnetic layer, a third conductive channel for outputting second output current is connected to a lower end of the second spin-charge conversion layer, and a second conductor having a ground is connected to a lower end of the third conductive channel,
wherein
a resistor for outputting steady current as the first output current is connected between nodes on opposite ends of the second conductive channel.

4. The spin logic device as set forth in claim 3 , wherein
when positive current is applied as the input current while the first drive voltage is applied through the first input portion and the second drive voltage is applied through the second input portion, the magnetization of the first magnetic layer is switched from the other direction to one direction and a spin-charge conversion through the first spin-charge conversion layer occurs depending on the magnetization of the first magnetic layer to induce the first output current in the second conductive channel in a direction from the second stage unit to the first stage unit, and when the first output current is induced in the second conductive channel, the magnetization of the second magnetic layer is switched from the other direction to one direction by the first output current and a spin-charge conversion through the second spin-charge conversion layer occurs depending on the magnetization of the second magnetic layer to induce the second output current in the third conductive channel in a first direction.

5. The spin logic device as set forth in claim 3 , wherein
when negative current is applied as the input current while the first drive voltage is applied through the first input portion and the second drive voltage is applied through the second input portion, the magnetization of the first magnetic layer is switched from one direction to the other direction and a spin-charge conversion through the first spin-charge conversion layer occurs depending on the magnetization of the first magnetic layer to induce the first output current in the second conductive channel in a direction from the first stage unit to the second stage unit, and when the first output current is induced in the second conductive channel, the magnetization of the second magnetic layer is switched from one direction to the other direction and a spin-charge conversion through the second spin-charge conversion layer occurs depending on the magnetization of the second magnetic layer to induce the second output current in the third conductive channel in a second direction.

6. The spin logic device as set forth in claim 4 , wherein
in a case in which a magnetization direction of the first magnetic layer and the second magnetic layer is switched from the other direction to one direction by applying the first drive voltage through the first input portion, applying the second drive voltage through the second input portion, and applying positive current through the first conductive channel, when the first drive voltage is applied again through the first input portion and the second drive voltage is applied again through the second input portion, the second output current of the first direction is induced in the third conductive channel to be output.

7. The spin logic device as set forth in claim 5 , wherein
in a case in which a magnetization direction of the first magnetic layer and the second magnetic layer are switched from one direction to the other direction by applying the first drive voltage through the first input portion, applying the second drive voltage through the second input portion, and applying negative current through the first conductive channel, when the first drive voltage is applied again through the first input portion and the second drive voltage is applied again through the second input portion, the second output current of the second direction is induced in the third conductive channel to be output.

Assignees

• Ind Academic Cooperation Found Yonsei Univ
• Inu Res & Business Foundation
• Ind Univ Coop Found Hanyang Univ Erica Camp
• Univ Yonsei Iacf
• Iucf Hyu Erica Campus

Inventors

• Hong Jongill
• Na Taehui
• Oh Saeroonter

Classifications

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/80

  Constructional details · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• H03K19/16

  using saturable magnetic devices · CPC title