Treatment liquid for manufacturing semiconductor, pattern forming method using the same, and method of manufacturing electronic device using the same

Patent metadata

Field	Value
Publication number	US-12372873-B2
Application number	US-202318522052-A
Country	US
Kind code	B2
Filing date	Nov 28, 2023
Priority date	Mar 31, 2016
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor, a pattern forming method using the same, and a method of manufacturing an electronic device using the same. The treatment liquid for manufacturing a semiconductor comprising: one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, wherein a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

First claim

What is claimed is:

1. A treatment liquid for manufacturing a semiconductor comprising:
one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn,
wherein a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

2. The treatment liquid for manufacturing a semiconductor according to claim 1 ,
wherein a mass of the particulate metal is measured by a SP-ICP-MS method.

3. The treatment liquid for manufacturing a semiconductor according to claim 1 , which is a developer or a rinsing liquid.

4. The treatment liquid for manufacturing a semiconductor according to claim 1 , comprising:
a quaternary ammonium salt.

5. The treatment liquid for manufacturing a semiconductor according to claim 1 , further comprising:
at least one selected from the group consisting of butyl acetate, N-methyl-2-pyrrolidone, isopropanol, ethanol, and methyl isobutyl carbinol.

6. A pattern forming method comprising:
a step of applying an actinic ray-sensitive or radiation-sensitive resin composition to a substrate to form an actinic ray-sensitive or radiation-sensitive film;
a step of exposing the actinic ray-sensitive or radiation-sensitive film; and
a step of treating the substrate or the actinic ray-sensitive or radiation-sensitive film using the treatment liquid for manufacturing a semiconductor according to claim 1 .

7. The pattern forming method according to claim 6 ,
wherein the pattern forming method comprises at least a step of developing the actinic ray-sensitive or radiation-sensitive film by using the treatment liquid for manufacturing a semiconductor as a developer as the step of treating the substrate or the actinic ray-sensitive or radiation-sensitive film using the treatment liquid for manufacturing a semiconductor.

8. The pattern forming method according to claim 6 ,
wherein the pattern forming method comprises at least a step of cleaning the actinic ray-sensitive or radiation-sensitive film by using the treatment liquid for manufacturing a semiconductor as a rinsing liquid as the step of treating the substrate or the actinic ray-sensitive or radiation-sensitive film using the treatment liquid for manufacturing a semiconductor.

9. A method of manufacturing an electronic device comprising:
the pattern forming method according to claim 6 .

Assignees

• Fujifilm Corp

Inventors

• Shimizu Tetsuya
• Kamimura Tetsuya

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• G03F7/425

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• G03F7/327

  Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts · CPC title