Electrically tunable quantum information processing device based on a doped semiconductor structure embedded with a defect

Patent metadata

Field	Value
Publication number	US-12372850-B2
Application number	US-202017438600-A
Country	US
Kind code	B2
Filing date	Mar 13, 2020
Priority date	Mar 15, 2019
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

This disclosure relates to optical devices for quantum information processing applications. In one example implementation, a semiconductor structure is provided. The semiconductor structure may be embedded with single defects that can be individually addressed. An electric bias and/or one or more optical excitations may be configured to control the single defects in the semiconductor structure to produce single photons for use in quantum information processing. The electric bias and optical excitations are selected and adjusted to control various carrier processes and to reduce environmental charge instability of the single defects to achieve optical emission with wide wavelength tunability and narrow spectral linewidth. Electrically controlled single photon source and other electro-optical devices may be achieved.

First claim

The invention claimed is:

1. An optical source device, comprising:
a first layer of a first semiconductor;
a second layer of a second semiconductor;
a third layer of a third semiconductor located between the first and second layers, the third layer comprising a defect addressable by optical means;
a first terminal in electric contact with the first layer; and
a second terminal in electric contract with the second layer,
wherein:
the defect comprises an optically bright excited state for generating an optical emission;
the first and second terminals are configured to apply an electric bias across the third layer;
the optical source device is adapted to receive a first optical excitation for preparing the defect into the optically bright excited state for generating the optical emission; and
the electric bias is configured to control a timing, an emission spectral linewidth, or a wavelength of the optical emission from the defect.

2. The optical source device of claim 1 , wherein the first layer is of p type and the second layer is of n type and wherein the electric bias is configured to control the timing of the optical emission from the defect by:
enabling the optical emission when the electric bias is lower than a first threshold bias value; and
quenching the optical emission when the electric bias is higher than a second threshold bias value.

3. The optical source device of claim 2 , where the electric bias is configured for reverse bias of p-i-n junction of the optical source device.

4. The optical source device of claim 2 , wherein the electric bias is controlled to alternate between a first bias lower than the first threshold bias value and a second bias higher than the second threshold bias value.

5. The optical source device of claim 2 , wherein the first threshold bias value is identical to or lower than the second threshold bias value.

6. The optical source device of claim 2 , wherein:
the first threshold bias value is configured such that charges in the third layer is above a first predetermined charge concentration threshold level when the electric bias is below the first threshold bias value; and
the second threshold bias value is configured such that the charges in the third layer is depleted to below a second predetermined charge concentration threshold level when the electric bias is above the second threshold bias value.

7. The optical source device of claim 6 , wherein the optical emission is quenched when the electric bias is higher than the second threshold bias value due to photo-ionization of the defect into an optically inactive state and a lack of free carriers for returning the defect from the optically inactive state to an optically active state via free carrier recapturing by the defect.

8. The optical source device of claim 7 , wherein the optically inactive state comprises a charge state and an electric charge level instability in the defect due to the photo-ionization is stabilized via recapturing of the free carriers in the third layer by the defect when the electric bias is below the first threshold bias value.

9. The optical source device of claim 2 , wherein the electric bias is configured to control the emission spectral linewidth of the optical emission from the defect by reducing a spectral diffusion of the optical emission when the electric bias is below the first threshold bias value.

10. An optical source device, comprising:
a first layer of a first semiconductor;
a second layer of a second semiconductor;
a third layer of a third semiconductor located between the first and second layers, the third layer comprising a defect addressable by optical means;
a first terminal in electric contact with the first layer; and
a second terminal in electric contract with the second layer,
wherein:
the defect comprises an optically bright excited state for generating an optical emission;
the first and second terminals are configured to apply an electric bias across the third layer;
the optical source device is adapted to receive a first optical excitation for preparing the defect into the optically bright excited state for generating the optical emission;
the electric bias is configured to control a timing, an emission spectral linewidth, or a wavelength of the optical emission from the defect; and
wherein the electric bias is reverse bias across a p-i-n junction of the optical source device and is larger than a threshold bias value above which charges in the third layer are depleted and is configured to achieve a large Stark shift in the defect for providing a wavelength tunability and to reduce spectral diffusion of the optical emission.

11. The optical source device of claim 10 , further adapted to receive a second optical excitation for charge repumping of the defect and configured to increase emission efficiency of the defect and for further controlling the emission spectral linewidth via the charge repumping of the defect.

12. The optical source device of claim 11 , wherein the first optical excitation causes photo-ionization of the defect into an optically inactive state and the second optical excitation is configured to repump the defect from the optically inactive state to optically active state when the electric bias larger than the threshold bias value is applied.

13. The optical source device of claim 12 , wherein the optically inactive state comprises a charge state and the second optical excitation, in addition to the electric bias, is configured to further stabilize a charge level in the defect.

14. The optical source device of claim 12 , wherein the second optical excitation is configured to further reduce spectral diffusion or blinking of the optical emission by reducing charge instability due to the photo-ionization from the first optical excitation in the defect by stabilizing a charge level in the defect, and wherein wavelength of the second optical excitation is selected such that an amount of photo-ionization of the defect by the second optical excitation is below a predetermined threshold.

15. The optical source device of claim 11 , wherein the second optical excitation is non-resonant with the optically bright excited state of the defect.

16. An optical source device, comprising
a first layer of a first semiconductor;
a second layer of a second semiconductor;
a third layer of a third semiconductor located between the first and second layers, the third layer comprising a defect addressable by optical means;
a first terminal in electric contact with the first layer; and
a second terminal in electric contract with the second layer,
wherein:
the defect comprises an optically bright excited state for generating an optical emission;
the first and second terminals are configured to apply an electric bias across the third layer;
the optical source device is adapted to receive a first optical excitation for preparing the defect into the optically bright excited state for generating the optical emission;
the electric bias is configured to control a timing, an emission spectral linewidth, or a wavelength of the optical emission from the defect; and
wherein the third layer comprises another defect and wherein the optical source device is configured to align the optical emission of the defect and optical emission from the another defect into resonance.

Assignees

• Univ Chicago

Inventors

• Bourassa Alexandre
• Anderson Christopher P
• Awschalom David D

Classifications

• G06N10/40

  Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control · CPC title

• H10N60/84

  Switching means for devices switchable between superconducting and normal states · CPC title

• H10N60/11

  Single-electron tunnelling devices · CPC title

• G02F3/022 Primary

  based on electro-, magneto- or acousto-optical elements (G02F3/028 takes precedence) · CPC title

• G02F3/00 Primary

  Optical logic elements; Optical bistable devices · CPC title