Spin hall magnetic sensor and method of measuring magnetoresistance using the same

Patent metadata

Field	Value
Publication number	US-12372593-B2
Application number	US-202318231994-A
Country	US
Kind code	B2
Filing date	Aug 9, 2023
Priority date	May 26, 2023
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

A spin Hall magnetic sensor includes a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer, and a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units, The magnetic includes a Wheatstone bridge structure to observe a magnetic Hall resistance generated by a spin orbit torque (SOT).

First claim

The invention claimed is:

1. A spin Hall magnetic sensor comprising:
a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer; and
a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units;
wherein the plurality of magnetic thin film units include:
a first magnetic thin film unit having a longitudinal direction having a constant angle with an input direction of a current;
a second magnetic thin film unit having a longitudinal direction disposed to form a constant angle with the longitudinal direction of the first magnetic thin film unit;
a third magnetic thin film unit having a longitudinal direction disposed parallel to the first magnetic thin film unit; and
a fourth magnetic thin film unit having a longitudinal direction disposed parallel to the second magnetic thin film unit.

2. The spin Hall magnetic sensor of claim 1 , wherein when the current is injected to the magnetic thin film unit, a spin current is generated in the non-magnetic layer, and a spin orbit torque (SOT) is generated on the magnetic layer.

3. The spin Hall magnetic sensor of claim 2 , wherein the plurality of non-magnetic substances include:
a first non-magnetic substance connecting the first magnetic thin film unit with the second magnetic thin film unit;
a second non-magnetic substance connecting the second magnetic thin film unit with the third magnetic thin film unit;
a third non-magnetic substance connecting the third magnetic thin film unit with the fourth magnetic thin film unit; and
a fourth non-magnetic substance connecting the fourth magnetic thin film unit with the first magnetic thin film unit.

4. The spin Hall magnetic sensor of claim 3 , wherein the longitudinal direction of the first magnetic thin film unit is formed at an angle of 45°±5° with an input direction of the current.

5. The spin Hall magnetic sensor of claim 3 , wherein the plurality of non-magnetic substances have a metal alloy structure in which the SOT is generated or a superlattice structure.

6. The spin Hall magnetic sensor of claim 3 , wherein each of the plurality of magnetic thin film units has three or more units connected to each other.

7. The spin Hall magnetic sensor of claim 6 , wherein when the number of units of each of the plurality of magnetic thin film units is 2n+1, where n is a natural number, n units among the units are non-magnetic substances.

8. A method of measuring a magnetic resistance using the spin Hall magnetic sensor of claim 3 , comprising:
applying the current to the spin Hall magnetic sensor;
measuring an output voltage V total of the spin Hall magnetic sensor; and
detecting a secondary harmonic signal voltage V DC,2nd from the output voltage.

9. The method of claim 8 , wherein the applying of the current to the spin Hall magnetic sensor includes applying an alternative current (AC) current.

Assignees

• Hyundai Motor Co Ltd
• Kia Corp
• Korea Inst Sci & Tech

Inventors

• Kwon Joon-Hyun
• Kim Hyun-Soo
• Yang Sang-Hyeok
• Noh Su-Jung
• Lee Han-Saem
• Lee Ji-Sung
• Min Byoung-Chul
• Choi Jong-Bum
• Han Dong-Soo

Classifications

• G01R33/093 Primary

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G01R33/0005

  Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types (G01R33/0206 takes precedence) · CPC title

• G01R33/096

  anisotropic magnetoresistance sensors · CPC title

• H01F10/06

  characterised by the coupling or physical contact with connecting or interacting conductors · CPC title

• H01F10/32

  Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} · CPC title