Infrared sensor and method of controlling infrared sensor

Patent metadata

Field	Value
Publication number	US-12372412-B2
Application number	US-202218051548-A
Country	US
Kind code	B2
Filing date	Nov 1, 2022
Priority date	May 25, 2020
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

First claim

What is claimed is:

1. An infrared sensor comprising:
an infrared light receiver;
a signal pathway; and
a first member, wherein
the infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered,
the signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver,
the driving signal has a current value equal to or greater than a prescribed magnitude, and
the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

2. The infrared sensor according to claim 1 , wherein
stopping the application of the driving signal causes the infrared light receiver to separate from the first member.

3. The infrared sensor according to claim 1 , further comprising:
a substrate; and
a beam, wherein
the beam has a connected part connected to at least one of a second member disposed on the substrate or the substrate,
the beam has an isolated part isolated from the substrate, and
the infrared light receiver is joined to the isolated part of the beam and supported in an isolated state from the substrate.

4. The infrared sensor according to claim 3 , wherein
the first member is the substrate.

5. The infrared sensor according to claim 2 , wherein
the infrared light receiver is a thermopile infrared light receiver and the beam has a single-layer structure.

6. The infrared sensor according to claim 2 , wherein
the infrared light receiver is a thermopile infrared light receiver,
the beam has a base layer and a thermocouple material layer disposed on the base layer, and
the thermocouple material layer has a first region and a second region formed from a material having a Seebeck coefficient that is different from the Seebeck coefficient of a material forming the first region.

7. The infrared sensor according to claim 2 , wherein
the infrared light receiver is a bolometric infrared light receiver including a resistance change layer formed from a material whose electrical resistance changes in relation to a temperature change,
the signal pathway includes a first interconnect that connects the resistance change layer and a first signal processing circuit and a second interconnect that connects the resistance change layer and a second signal processing circuit,
the first interconnect has a first isolated part isolated from the substrate between the first signal processing circuit and a connected part of the resistance change layer and the first interconnect, and
the second interconnect has a second isolated part isolated from the substrate between the second signal processing circuit and a connected part of the resistance change layer and the second interconnect.

8. The infrared sensor according to claim 3 , wherein
the substrate has a recess formed between the substrate and an assemblage of the infrared light receiver and the beam, and
the assemblage is suspended above the recess.

9. The infrared sensor according to claim 2 , further comprising:
a pillar which is disposed on the substrate and extends in a direction going away from a surface of the substrate, wherein
the connected part of the beam is connected to the pillar, and
an assemblage of the infrared light receiver and the beam is suspended over the substrate by the pillar.

10. The infrared sensor according to claim 1 , wherein
the signal pathway further includes a second signal pathway allowing passage of a signal for sensing a reception of infrared light by the infrared light receiver, and
the first signal pathway is independent from the second signal pathway.

11. A method of controlling an infrared sensor, the method comprising:
performing sensing a prescribed number of times per second with the infrared sensor according to any one of claims 1 to 10 ; and
regulating, in a period for applying the driving signal to the infrared light receiver on a cycle equal to a cycle of the sensing and sensing infrared light with the infrared sensor, the application of the driving signal to maximize a radius of curvature of the infrared light receiver.

12. The method of controlling an infrared sensor according to claim 11 , wherein
a temperature of the infrared light receiver when the infrared light receiver is receiving the infrared light is lower than a temperature of the infrared light receiver when the driving signal is being applied to the infrared light receiver.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Tambo Naoki
• Fujikane Masaki
• Nakamura Kunihiko
• OHURA Kosei
• Naito Yasuyuki

Classifications

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• H10N10/17

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title

• G01J5/023

  Particular leg structure or construction or shape; Nanotubes · CPC title

• G01J5/40

  using bimaterial elements · CPC title

• G01J5/0215

  Compact construction · CPC title