Photovoltaic devices and method of making

Patent metadata

Field	Value
Publication number	US-12369426-B2
Application number	US-202418411782-A
Country	US
Kind code	B2
Filing date	Jan 12, 2024
Priority date	May 2, 2013
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

First claim

The invention claimed is:

1. A photovoltaic device, comprising:
a transparent layer stack;
a p+ type semiconducting layer; and
an absorber layer in direct contact with the transparent layer stack at a front interface of the absorber layer, wherein:
the absorber layer consists of a thickness of the absorber layer between the front interface of the absorber layer and a back interface of the absorber layer,
the front interface of the absorber layer is closer to the transparent layer stack than the back interface of the absorber layer,
the absorber layer comprises cadmium, selenium, and tellurium,
an atomic concentration of selenium varies across the thickness of the absorber layer,
the atomic concentration of selenium is greater at the front interface of the absorber layer relative to the back interface of the absorber layer,
the absorber layer is a p-type layer,
the absorber layer consists of a first region and a second region,
the first region extends from the front interface of the absorber layer to the second region,
the second region extends from the first region to the back interface of the absorber layer,
a ratio of an average atomic concentration of selenium in the first region to an average atomic concentration of selenium in the second region is greater than 10,
the absorber layer is between the transparent layer stack and the p+ type semiconducting layer,
the p+ type semiconducting layer comprises at least one of: zinc telluride, magnesium telluride, manganese telluride, beryllium telluride, mercury telluride, arsenic telluride, antimony telluride, or copper telluride, and

the photovoltaic device has no window layer.

2. The photovoltaic device of claim 1 , wherein the first region has a continuous uniform thickness between 100 nanometers to 3000 nanometers thick and the second region has a continuous uniform thickness between 100 nanometers to 3000 nanometers thick.

3. The photovoltaic device of claim 1 , wherein the absorber layer further comprises sulfur, oxygen, copper, chlorine, or combinations thereof.

4. The photovoltaic device of claim 1 , wherein at least a portion of selenium is present in the absorber layer in the form of a ternary compound, a quaternary compound, or combinations thereof.

5. The photovoltaic device of claim 1 , wherein an average atomic concentration of selenium in the absorber layer is in a range from about 0.001 atomic percent to about 40 atomic percent of the absorber layer.

6. The photovoltaic device of claim 5 , wherein the average atomic concentration of selenium in the absorber layer is in a range from 0.001 atomic percent to 20 atomic percent of the absorber layer.

7. The photovoltaic device of claim 1 , wherein the absorber layer comprises a plurality of grains separated by grain boundaries, and wherein an average atomic concentration of selenium in the grain boundaries is higher than an average atomic concentration of selenium in the grains.

8. The photovoltaic device of claim 1 , wherein the transparent layer stack comprises:
a transparent conductive layer disposed on a support; and
a buffer layer disposed between the transparent conductive layer and the absorber layer.

9. The photovoltaic device of claim 8 , wherein the transparent layer stack further comprises an interlayer disposed between the buffer layer and the absorber layer.

10. The photovoltaic device of claim 9 , wherein the absorber layer is in direct contact with the interlayer.

11. The photovoltaic device of claim 1 , wherein:
the first region is between 200 nanometers to 1500 nanometers thick,
the second region is between 200 nanometers to 1500 nanometers thick.

12. A photovoltaic device, comprising:
a transparent layer stack;
an absorber layer in direct contact with the transparent layer stack at a front interface of the absorber layer; and
a p+ type semiconducting layer, wherein:
the absorber layer is between the transparent layer stack and the p+ type semiconducting layer,
the p+ type semiconducting layer comprises at least one of: zinc telluride, magnesium telluride, manganese telluride, beryllium telluride, mercury telluride, arsenic telluride, antimony telluride, or copper telluride,
the absorber layer consists of a thickness of the absorber layer between the front interface of the absorber layer and a back interface of the absorber layer,
the front interface of the absorber layer is closer to the transparent layer stack than the back interface of the absorber layer,
the absorber layer comprises cadmium, selenium, and tellurium,
an atomic concentration of selenium varies across the thickness of the absorber layer,
the atomic concentration of selenium is greater at the front interface of the absorber layer relative to the back interface of the absorber layer,
the absorber layer is a p-type layer,
the absorber layer consists of a first region and a second region,
the first region extends from the front interface of the absorber layer to the second region,
the second region extends from the first region to the back interface of the absorber layer, and
a ratio of an average atomic concentration of selenium in the first region to an average atomic concentration of selenium in the second region is greater than 10.

13. The photovoltaic device of claim 12 , wherein an average atomic concentration of selenium in the absorber layer is in a range from about 0.001 atomic percent to about 40 atomic percent of the absorber layer.

14. The photovoltaic device of claim 12 , further comprising a back contact layer, wherein the p+ type semiconducting layer is between the absorber layer and the back contact layer.

15. The photovoltaic device of claim 14 , wherein the back contact layer comprises a plurality of layers.

16. The photovoltaic device of claim 12 , wherein the p+ type semiconducting layer comprises zinc telluride.

17. The photovoltaic device of claim 12 , wherein the absorber layer further comprises at least one of: sulfur, oxygen, copper, chlorine, lead, zinc, mercury, or combinations thereof.

18. The photovoltaic device of claim 12 , wherein the absorber layer further comprises oxygen, and an amount of oxygen is between about 1 atomic percent to about 10 atomic percent.

19. The photovoltaic device of claim 12 , wherein the absorber layer further comprises oxygen, and an amount of oxygen less than about 1 atomic percent.

20. The photovoltaic device of claim 12 , wherein the first region has a continuous uniform thickness less than or equal to about 1500 nanometers.

Assignees

• First Solar Inc

Inventors

• Blaydes Holly Ann
• Andreini Kristian William
• Huber William Hullinger
• Hinners Eugene Thomas
• Shiang Joseph John
• Liang Yong
• Choi Jongwoo

Classifications

• H10P14/3432

  Tellurides · CPC title

• H10P14/3431

  Selenides · CPC title

• H10P14/3254

  Graded layers · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3241

  being conductive materials · CPC title