Encoders, decoders, and semiconductor memory devices including the same

Patent metadata

Field	Value
Publication number	US-12367916-B2
Application number	US-202217954860-A
Country	US
Kind code	B2
Filing date	Sep 28, 2022
Priority date	Nov 13, 2019
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

An encoder includes an encoding unit configured to receive 2n-bit read data and to generate 2m-bit read data, and an output driver configured to input m-bit first read data of the 2m-bit read data, to transmit voltage and/or current a first number of times corresponding to a number of first bits indicating a first state included in the m-bit first read data or to transmit current corresponding to the number of first bits during an activation period of a clock signal, and to transmit the voltage and/or the current a second number of times corresponding to a number of second bits indicating the first state included in m-bit second read data of the 2m-bit read data or to transmit current corresponding to the number of second bits during a deactivation period of the clock signal, wherein n is at least 2 and m is at least 3.

First claim

What is claimed is:

1. A semiconductor memory device comprising:
a row decoder configured to generate a plurality of word line selection signals in response to a row address;
a column decoder configured to generate a plurality of column selection signals in response to a column address;
a memory cell array comprising a plurality of memory cells, and configured to generate multi-bit read data from selected memory cells among the plurality of memory cells in response to the plurality of word line selection signals and the plurality of column selection signals and/or to store multi-bit write data from the selected memory cells;
a read path unit configured to receive the multi-bit read data and to generate 2n-bit read data during a read operation; and
a decoder configured to detect, during a write operation, a first level of a current and/or a voltage received during an activation period of a clock signal an output a first write level, to detect a second level of a current and/or a voltage received during a deactivation period of the clock signal and output a second write level, to generate n-bit first write data of 2n-bit write data using the first write level, and to generate n-bit second write data of the 2n-bit write data using the second write level; and
a write path unit configured to receive the n-bit first write data and the n-bit second write data to generate multi-bit write data,
wherein each of the first write level and the second write level is one of at least three different levels.

2. The semiconductor memory device of claim 1 , wherein the decoder comprises:
an input driver configured to detect the first level of the current and/or the voltage received during the activation period of the clock signal to output the first write level and to detect the second level of the current and/or the voltage received during the deactivation period of the clock signal to output the second write level; and
a decoding unit configured to generate the n-bit first write data of the 2n-bit write data using the first write level and to generate the n-bit second write data of the 2n-bit write data using the second write level.

3. The semiconductor memory device of claim 2 , wherein the input driver comprises a level detector configured to accumulate the current and/or the voltage received during the activation period of the clock signal to detect the first write level and to accumulate the current and/or the voltage received during the deactivation period of the clock signal to detect the second write level.

4. The decoder of claim 3 , wherein the level detector comprises an integrator or a differentiator.

5. The semiconductor memory device of claim 4 , wherein the decoding unit comprises:
a reference voltage generator configured to generate m different reference voltages;
a comparator configured to compare the first write level with the m reference voltages to generate the n-bit first write data and to compare the second write level with the m reference voltages to generate the n-bit second write data; and
a latch unit configured to latch the n-bit first write data and the n-bit second write data in response to the clock signal to output 2n-bit write data.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Moon Byongmo

Classifications

• G11C7/1039

  using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers · CPC title

• G11C11/4074

  Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title

• G11C7/1096

  Write circuits, e.g. I/O line write drivers · CPC title

• G11C11/4085

  Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge · CPC title

• G11C7/106

  Data output latches · CPC title