Optical microdisks for integrated devices

Patent metadata

Field	Value
Publication number	US-12366706-B2
Application number	US-202418627563-A
Country	US
Kind code	B2
Filing date	Apr 5, 2024
Priority date	Aug 8, 2019
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

Apparatus and methods for improving optical signal collection in an integrated device are described. A microdisk can be formed in an integrated device and increase collection and/or concentration of radiation incident on the microdisk and re-radiated by the microdisk. An example integrated device that can include a microdisk may be used for analyte detection and/or analysis. Such an integrated device may include a plurality of pixels, each having a reaction chamber for receiving a sample to be analyzed, an optical microdisk, and an optical sensor configured to detect optical emission from the reaction chamber. The microdisk can comprise a dielectric material having a first index of refraction that is embedded in one or more surrounding materials having one or more different refractive index values.

First claim

What is claimed is:

1. A fluorescence detection system, comprising:
a microfabricated optical structure, comprising:
a substrate having a plurality of pixels, wherein two or more pixels of the plurality of pixels each comprise:
an optical sensor;
a microdisk; and
an iris layer disposed between the microdisk and the optical sensor,

wherein:
the fluorescence detection system comprises, for each of the two or more pixels, a reaction chamber configured to hold a specimen for analysis;
the fluorescence detection system comprises, for each of the two or more pixels, a waveguide configured to deliver excitation radiation to the reaction chamber;
the optical sensor is configured to detect emission radiation emitted from the reaction chamber;
the microdisk is disposed between the waveguide and the optical sensor and configured to increase an amount of the emission radiation that is received by the optical sensor compared to an amount of the emission radiation that would be received by the optical sensor without the microdisk;

the microdisk is formed of a material substantially transparent at a wavelength of the emission radiation; and
the microdisk comprises a dielectric material having a first index of refraction that is different from a second index of refraction for material surrounding the microdisk.

2. The fluorescence detection system of claim 1 , further comprising:
an instrument comprising an excitation light source,
wherein the fluorescence detection system comprises optical components comprising the waveguides, the optical components being configured to interface with the instrument to receive the excitation radiation from the excitation light source, and the waveguides being configured to deliver the excitation radiation, received from the instrument, to the reaction chambers.

3. The fluorescence detection system of claim 1 , wherein the microdisk forms a resonant cavity for collecting and re-radiating the emission radiation.

4. The fluorescence detection system of claim 1 , wherein the microdisk is formed from silicon nitride.

5. The fluorescence detection system of claim 4 , wherein the material surrounding the microdisk comprises silicon dioxide.

6. The fluorescence detection system of claim 4 , wherein the optical sensor comprises a time-binning photodetector.

7. The fluorescence detection system of claim 1 , wherein the microfabricated optical structure further comprises complementary metal-oxide-semiconductor (CMOS) circuitry integrated on the substrate and connected to the optical sensor, the CMOS circuitry comprising interconnects disposed between the waveguides and the microdisks.

8. A fluorescence detection system, comprising:
a microfabricated optical structure, comprising:
a substrate having a plurality of pixels, wherein two or more pixels of the plurality of pixels each comprise:
an optical sensor; and
a microdisk,

wherein:
the fluorescence detection system comprises, for each of the two or more pixels, a reaction chamber configured to hold a specimen for analysis;
the fluorescence detection system comprises, for each of the two or more pixels, a waveguide configured to deliver excitation radiation to the reaction chamber;
the optical sensor is configured to detect emission radiation emitted from the reaction chamber;
the microdisk is disposed between the waveguide and the optical sensor and configured to increase an amount of the emission radiation that is received by the optical sensor compared to an amount of the emission radiation that would be received by the optical sensor without the microdisk; and
the microdisk comprises an oxide or nitride material.

9. The fluorescence detection system of claim 8 , further comprising:
an instrument comprising an excitation light source,
wherein the fluorescence detection system comprises optical components comprising the waveguides, the optical components being configured to interface with the instrument to receive the excitation radiation from the excitation light source, and the waveguides being configured to deliver the excitation radiation, received from the instrument, to the reaction chambers.

10. The fluorescence detection system of claim 8 , wherein the microdisk forms a resonant cavity for collecting and re-radiating the emission radiation.

11. The fluorescence detection system of claim 8 , wherein the microdisk is formed from silicon nitride.

12. The fluorescence detection system of claim 8 , wherein the optical sensor comprises a time-binning photodetector.

13. The fluorescence detection system of claim 8 , wherein the microfabricated optical structure further comprises complementary metal-oxide-semiconductor (CMOS) circuitry integrated on the substrate and connected to the optical sensor, the CMOS circuitry comprising interconnects disposed between the waveguides and the microdisks.

14. A fluorescence detection system, comprising:
a microfabricated optical structure, comprising:
a substrate having a plurality of pixels, wherein two or more pixels of the plurality of pixels each comprise:
an optical sensor; and
a microdisk,

wherein:
the fluorescence detection system comprises, for each of the two or more pixels, a reaction chamber configured to hold a specimen for analysis;
the fluorescence detection system comprises, for each of the two or more pixels, a waveguide configured to deliver excitation radiation to the reaction chamber;
the optical sensor is configured to detect emission radiation emitted from the reaction chamber;
the microdisk is disposed between the waveguide and the optical sensor and configured to increase an amount of the emission radiation that is received by the optical sensor compared to an amount of the emission radiation that would be received by the optical sensor without the microdisk; and
the microdisk comprises a dielectric material having a first index of refraction that is greater than a second index of refraction for material surrounding the microdisk by at least approximately 18% at a wavelength of the emission radiation.

15. The fluorescence detection system of claim 14 , further comprising:
an instrument comprising an excitation light source,
wherein the fluorescence detection system comprises optical components comprising the waveguides, the optical components being configured to interface with the instrument to receive the excitation radiation from the excitation light source, and the waveguides being configured to deliver the excitation radiation, received from the instrument, to the reaction chambers.

16. The fluorescence detection system of claim 14 , wherein the microdisk forms a resonant cavity for collecting and re-radiating the emission radiation.

17. The fluorescence detection system of claim 14 , wherein the microdisk is formed from silicon nitride.

18. The fluorescence detection system of claim 14 , wherein the optical sensor comprises a time-binning photodetector.

19. The fluorescence detection system of claim 14 , wherein the first index of refraction is greater than the second index of refraction by at least approximately 38% at the wavelength of the emission radiation.

20. The fluorescence detection system of claim 14 , wherein the microfabricated optical structure further comprises complementary metal-oxide-semiconductor (CMOS) circuitry integrated on the substrate and connected to the optical sensor, the CMOS circuitry comprising interconnects disposed between the waveguides and the microdisks.

Assignees

• Quantum Si Inc

Inventors

• Kabiri Ali
• Shen Bing
• Schmid Gerard
• Beach James
• Preston Kyle
• Hosali Sharath

Classifications

• G02B2006/12138

  Sensor · CPC title

• G02B2006/12109

  Filter · CPC title

• G02B6/136

  by etching · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/806

  Optical elements or arrangements associated with the image sensors · CPC title