Bismuth vanadate electrode comprising vanadium-functionalized graphene quantum dots and a preparation method thereof

Patent metadata

Field	Value
Publication number	US-12365997-B2
Application number	US-202318331769-A
Country	US
Kind code	B2
Filing date	Jun 8, 2023
Priority date	Oct 11, 2019
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A bismuth vanadate electrode including vanadium-functionalized graphene quantum dots and a method for preparing the same is disclosed. More particularly, the addition of graphene quantum dots (GQDs) in the process of immersing a bismuth vanadate (BiVO 4 ) electrode in an alkaline solution to remove vanadium oxide (V 2 O 5 ) excessively formed on the surface of the electrode during its preparation, protects the electrode from the alkaline solution as the graphene quantum dots are adsorbed onto the surface of BiVO 4 while V 2 O 5 is removed. This improves the efficiency of oxygen evolution reaction (OER) when applied to a photoanode due to vanadium (V)-functionalized graphene quantum dots formed as the etched vanadium ions ((VO) 4 3− ) are adsorbed onto the graphene quantum dots.

First claim

What is claimed is:

1. A bismuth vanadate electrode comprising vanadium-functionalized graphene quantum dots, comprising:
(i) a bismuth vanadate (BiVO 4 ) electrode; and
(ii) graphene quantum dots adsorbed on the surface of the bismuth vanadate electrode,
wherein the graphene quantum dots are vanadium-functionalized by adsorption of (VO) 4 3− vanadium ions.

2. The bismuth vanadate electrode comprising vanadium-functionalized graphene quantum dots according to claim 1 , wherein, in an effective peak formed in a range of 350-400 cm −1 as a result of Raman spectroscopy for the bismuth vanadate comprising vanadium-functionalized graphene quantum dots, wherein said effective peak comprises a peak intensity (I A ) of bismuth vanadate and a peak intensity (I B ) of the bismuth vanadate comprising vanadium-functionalized graphene quantum dot, an intensity ratio (I B /I A ) of the peak intensity (I A ) of bismuth vanadate and the peak intensity (I B ) of the bismuth vanadate comprising vanadium-functionalized graphene quantum dot is 1.1-3.

3. A photoanode comprising the bismuth vanadate electrode comprising vanadium-functionalized graphene quantum dots according to claim 1 .

4. A photoelectrochemical cell for water splitting, comprising the photoanode according to claim 3 .

Assignees

• S Oil Corp
• Ulsan Nat Inst Science & Tech Unist

Inventors

• Jang Ji-Hyun
• Yoon Ki-Yong
• Kwon Sungwoo
• Hur Nam Hyun
• Paik Sang Cheol

Classifications

• C25B11/075

  consisting of a single catalytic element or catalytic compound · CPC title

• C25B11/057

  consisting of a single element or compound · CPC title

• C25B1/04 Primary

  by electrolysis of water · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F30/00

  Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors · CPC title