Light emitting device and method for producing the same

Patent metadata

Field	Value
Publication number	US-12364081-B2
Application number	US-202217939394-A
Country	US
Kind code	B2
Filing date	Sep 7, 2022
Priority date	Sep 10, 2021
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a first type semiconductor layer;
an active layer;
a second type semiconductor layer disposed adjacent to said active layer and opposite said first type semiconductor layer, and including a current spreading layer that has a recess;
an insulation layer filling said recess and protruding from a surface of said current spreading layer that faces in a direction away from said active layer; and
a contact layer disposed on said surface of said current spreading layer which lacks said insulation layer,
a sum of a depth of said recess and a thickness of said contact layer being not less than a thickness of said insulation layer.

2. The light-emitting device as claimed in claim 1 , wherein a difference between the sum of the depth of said recess and the thickness of said contact layer and the thickness of said contact layer ranges from 0 to 350 Å.

3. The light-emitting device as claimed in claim 1 , wherein said insulation layer penetrates an entire thickness of said current spreading layer.

4. The light-emitting device as claimed in claim 1 , wherein said insulation layer penetrates a portion of an entire thickness of said current spreading layer.

5. The light-emitting device as claimed in claim 1 , wherein said second type semiconductor layer further includes a blocking layer that is close to said active layer, and a transition layer interposed between said blocking layer and said current spreading layer, said insulation layer extends into said transition layer.

6. The light-emitting device as claimed in claim 5 , wherein said insulation layer extends into said blocking layer.

7. The light-emitting device as claimed in claim 1 , wherein a cross section of said insulation layer along a plane parallel to a depth direction of said recess forms a trapezoid having two oblique sides that are spaced apart in a direction perpendicular to the depth direction and that diverge from said contact layer to said current spreading layer.

8. The light-emitting device as claimed in claim 1 , further comprising an electrode disposed on said first type semiconductor layer, said electrode has a projection on an imaginary plane along a projection direction perpendicular to said surface of said current spreading layer, and that is located within a projection of said insulation layer on the imaginary plane.

9. The light-emitting device as claimed in claim 1 , wherein the thickness of said insulation layer ranges from 1000 Å to 7000 Å.

10. The light-emitting device as claimed in claim 1 , wherein the thickness of said contact layer ranges from 500 Å to 3000 Å.

11. The light-emitting device as claimed in claim 1 , wherein said current spreading layer has a thickness ranging from 0.15 μm to 2 μm.

12. The light-emitting device as claimed in claim 1 , wherein a cross section of said contact layer along a plane perpendicular to a depth direction of said recess has a circular outline that has a diameter ranging from 4 μm to 12 μm.

13. The light-emitting device as claimed in claim 1 , wherein, of an area of said second type semiconductor layer 61 , a percentage of an area of said contact layer 51 ranges from 1.5% to 10%.

14. A method for producing a light-emitting device, comprising the steps of:
providing a light-emitting laminated structure having a first type semiconductor layer, an active layer, a second type semiconductor layer that are disposed on one another in such order, said second type semiconductor layer including a current spreading layer;
patterning said current spreading layer to form a recess;
forming an insulation layer that fills said recess of said current spreading layer; and
forming a contact layer on a surface of said current spreading layer that lacks said insulation layer, a sum of a depth of said recess and a thickness of said contact layer being not less than a thickness of said insulation layer.

15. The method as claimed in claim 14 , wherein said insulation layer penetrates an entire thickness of said current spreading layer of said second type semiconductor layer.

16. The method as claimed in claim 14 , wherein said insulation layer penetrates a portion of an entire thickness of said current spreading layer of said second type semiconductor layer.

17. The method as claimed in claim 14 , wherein said second type semiconductor layer further includes a blocking layer and a transition layer interposed between said active layer and said current spreading layer, said insulation layer extends into said transition layer.

18. The method as claimed in claim 17 , wherein said insulation layer extends further into said blocking layer.

19. The method as claimed in claim 14 , wherein a cross section of said recess along a plane parallel to a depth direction of said recess forms a trapezoid having two opposite oblique sides that are spaced apart in a direction perpendicular to the depth direction and that diverge from said contact layer to said current spreading layer.

20. The method as claimed in claim 14 , further comprising flattening surfaces of said insulation layer and said contact layer when the sum of the depth of said recess and the thickness of said contact layer is greater than the thickness of said insulation layer.

Assignees

• Tianjin Sanan Optoelectronics Co Ltd

Inventors

• Jia Yuehua
• Ke Weifan
• Kuo Huanshao
• Peng Yu-Ren
• Wang Duxiang

Classifications

• H10H20/852

  Encapsulations · CPC title

• H10H20/80

  Constructional details · CPC title

• H10H20/8162 Primary

  Current-blocking structures · CPC title

• H10H20/0133

  with a substrate not being Group III-V materials · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title