Near-infrared light emitting semiconductor element and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-12364058-B2
Application number	US-202217682093-A
Country	US
Kind code	B2
Filing date	Feb 28, 2022
Priority date	Sep 3, 2019
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

Provided are: a near infrared light-emitting semiconductor element that does not contain any harmful elements and that makes it possible to obtain near infrared light of a stable wavelength in a narrow band regardless of the operating environment; and a method for producing the near infrared light-emitting semiconductor element. GaN is used in the method for producing a near infrared light-emitting semiconductor element, and an active layer added in order to substitute Tm with Ga is formed on GaN in a reaction container at a growth rate of 0.1-30 μm/h without removal from said reaction container using an organometallic vapor phase growth method under temperature conditions of 600-1400° C. in a series of formation steps including formation of a p-type layer and an n-type layer. GaN is used in the near infrared light-emitting semiconductor element, and said near infrared light-emitting semiconductor element includes an active layer sandwiched between an n-type layer and a p-type layer on a substrate. An organometallic vapor phase growth method is used to add the active layer to the GaN in order to substitute Tm with Ga.

First claim

What is claimed is:

1. A method for manufacturing a near-infrared light emitting semiconductor element, which emits light with three dominant peaks between wavelength of 790 nm and 820 nm by a transition in the 4f shell of Tm3+ ions electrically excited by a current injection, wherein
an active layer obtained by adding Tm to replace the Ga in GaN by supplying TMG, NH3, and Tm(i-PrCp) 3 together and controlling a substitution site of Tm 3+ ion so that it is in the Ga site or its immediate vicinity is formed at a growth rate of 1 to 30 μm/h in a reaction vessel without removing it from the reaction vessel, using a metal organic chemical vapor deposition, under the temperature condition of 600-1400° C., in a series of forming steps of a p-type layer and an n-type layer.

2. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 1 , wherein the amount of Tm added is 1×10 12 to 1×10 23 cm −3 .

3. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 1 , wherein the active layer is formed by stacking a plurality of the Tm-added GaN layer and the Tm-free GaN layer as a pair.

4. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 1 , wherein
the growth pressure of the active layer in a metal organic chemical vapor deposition exceeds 0.01 kPa and is less than 300 kPa.

5. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 1 , wherein the flow rate of a carrier gas in a metal organic chemical vapor deposition used for forming the active layer is 10 to 300 SLM.

6. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 2 , wherein the active layer is formed by stacking a plurality of the Tm-added GaN layer and the Tm-free GaN layer as a pair.

7. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 2 , wherein the growth pressure of the active layer in the metal organic chemical vapor deposition exceeds 0.01 kPa and is less than 300 kPa.

8. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 3 , wherein the growth pressure of the active layer in the metal organic chemical vapor deposition exceeds 0.01 kPa and is less than 300 kPa.

9. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 2 , wherein the flow rate of the carrier gas in the metal organic chemical vapor deposition used for forming the active layer is 10 to 300 SLM.

10. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 3 , wherein the flow rate of the carrier gas in the metal organic chemical vapor deposition used for forming the active layer is 10 to 300 SLM.

11. The method for manufacturing a near-infrared light emitting semiconductor element according to claim 4 , wherein the flow rate of the carrier gas in the metal organic chemical vapor deposition used for forming the active layer is 10 to 300 SLM.

12. A method for manufacturing a near-infrared light emitting semiconductor element, wherein
an active layer obtained by adding Tm to replace the Ga in GaN by supplying TMG, NH3, and Tm(i-PrCp)3 together and controlling a substitution site of Tm3+ ion so that it is in the Ga site or its immediate vicinity is formed in a reaction vessel without removing it from the reaction vessel, using a metal organic chemical vapor deposition, under the temperature condition of 600-1400° C., in a series of forming steps of a p-type layer and an n-type layer, wherein the active layer is formed by stacking a plurality of pairs consisting of a Tm-added GaN layer, formed at a growth rate of 1 to 30 μm/h, and a Tm-free GaN layer, which is thicker than the Tm-added GaN layer.

Assignees

• Univ Osaka
• Ritsumeikan Trust

Inventors

• Ichikawa Shuhei
• Yoshioka Naoki
• Fujiwara Yasufumi
• Tatebayashi Jun

Classifications

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3216

  Nitrides · CPC title