Technologies for on-memory die voltage regulator

US12361979B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12361979-B2
Application numberUS-202117482353-A
CountryUS
Kind codeB2
Filing dateSep 22, 2021
Priority dateSep 22, 2021
Publication dateJul 15, 2025
Grant dateJul 15, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Techniques for an on-memory die voltage regulator is disclosed. In the illustrative embodiment, a voltage regulator on a memory die is enabled upon receipt of a memory operation. The illustrative voltage regulator includes an analog controller that controls a shunt current based on a current output voltage of the voltage regulator. The illustrative voltage regulator also includes a digital controller that controls several switches based on the input voltage that control an effective resistance of part of the voltage regulator.

First claim

Opening claim text (preview).

The invention claimed is: 1. A memory die comprising: a voltage regulator; and controller circuitry to activate the voltage regulator in response to receipt of a memory operation, wherein the controller circuitry is to activate the voltage regulator in response to receipt of a memory write operation. 2. The memory die of claim 1 , wherein the voltage regulator is a linear voltage regulator. 3. The memory die of claim 2 , wherein a dropout of the voltage regulator is less than 100 millivolts. 4. The memory die of claim 1 , further comprising digital controller circuitry to control a digital state of one or more transistors based on an input voltage of the voltage regulator. 5. The memory die of claim 4 , further comprising analog controller circuitry to control a shunt current through a transistor based on an output voltage of the voltage regulator. 6. The memory die of claim 5 , wherein the analog controller circuitry is to control the shunt current through the transistor based on an efficiency parameter of the voltage regulator. 7. The memory die of claim 5 , wherein the analog controller circuitry comprises an operational amplifier, wherein the digital controller circuitry comprises a plurality of comparators. 8. The memory die of claim 7 , wherein the digital controller circuitry comprises a plurality of different reference voltages, wherein each of the plurality of different references voltages is connected to a first input of different comparator of the plurality of comparators, wherein the input voltage of the voltage regulator is connected to a second input of each of the plurality of comparators. 9. The memory die of claim 7 , wherein an output voltage of the voltage regulator is connected to a first input of the operational amplifier, wherein a target output voltage is connected to a second input of the operational amplifier, wherein an output of the operational amplifier is connected to a gate of the transistor, wherein a source of the transistor is connected to the output voltage of the voltage regulator, wherein a drain of the transistor is connected to a ground. 10. The memory die of claim 1 , wherein the controller circuitry is not to activate the voltage regulator in response to receipt of a memory read operation. 11. The memory die of claim 1 , wherein the voltage regulator has a settling time of less than one nanosecond. 12. An integrated circuit component comprising: a linear voltage regulator comprising: analog controller circuitry to control a shunt current through a transistor based on an output voltage of the linear voltage regulator, and digital controller circuitry to control a digital state of one or more transistors based on an input voltage of the linear voltage regulator, wherein the digital controller circuitry comprises a plurality of comparators, wherein the digital controller circuitry comprises a plurality of different reference voltages, wherein individual reference voltages of the plurality of different references voltages is connected to a first input of different comparator of the plurality of comparators, wherein the input voltage of the linear voltage regulator is connected to a second input of individual comparators of the plurality of comparators. 13. The integrated circuit component of claim 12 , wherein the analog controller circuitry comprises an operational amplifier. 14. The integrated circuit component of claim 13 , wherein the output voltage of the linear voltage regulator is connected to a first input of the operational amplifier, wherein a target output voltage is connected to a second input of the operational amplifier, wherein an output of the operational amplifier is connected to a gate of the transistor, wherein a source of the transistor is connected to the output voltage of the linear voltage regulator, wherein a drain of the transistor is connected to a ground. 15. The integrated circuit component of claim 12 , wherein the integrated circuit component is a memory die. 16. A memory die comprising: a linear voltage regulator comprising: analog controller circuitry to control a shunt current through a transistor based on an output voltage of the linear voltage regulator; and digital controller circuitry to control a digital state of one or more transistors based on an input voltage of the linear voltage regulator, wherein the analog controller circuitry and the digital controller circuitry generate a regulated voltage with a settling time of less than 1 nanosecond; and wherein the analog controller circuitry and the digital controller circuitry generate the regulated voltage with a variation of less than 100 millivolts. 17. The memory die of claim 16 , wherein the linear voltage regulator comprises circuitry for generating the regulated voltage at an efficiency of at least 70%. 18. The memory die of claim 16 , further comprising circuitry for controlling an efficiency of the linear voltage regulator. 19. The memory die of claim 16 , wherein the digital controller circuitry comprises a plurality of comparators, wherein the digital controller circuitry comprises a plurality of different reference voltages, wherein individual reference voltages of the plurality of different references voltages is connected to a first input of different comparator of the plurality of comparators, wherein the input voltage of the linear voltage regulator is connected to a second input of individual comparators of the plurality of comparators. 20. The memory die of claim 16 , wherein the analog controller circuitry comprises an operational amplifier.

Assignees

Inventors

Classifications

  • G05F1/562Primary

    with a threshold detection shunting the control path of the final control device · CPC title

  • Supervision thereof, e.g. detecting power-supply failure by out of limits supervision · CPC title

  • Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports · CPC title

  • Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title

  • Power supply circuits · CPC title

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What does patent US12361979B2 cover?
Techniques for an on-memory die voltage regulator is disclosed. In the illustrative embodiment, a voltage regulator on a memory die is enabled upon receipt of a memory operation. The illustrative voltage regulator includes an analog controller that controls a shunt current based on a current output voltage of the voltage regulator. The illustrative voltage regulator also includes a digital cont…
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification G05F1/562. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 15 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).