Techniques to adapt DC bias of voltage regulators for memory devices as a function of bandwidth demand
US-10854245-B1 · Dec 1, 2020 · US
US12361979B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12361979-B2 |
| Application number | US-202117482353-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 22, 2021 |
| Priority date | Sep 22, 2021 |
| Publication date | Jul 15, 2025 |
| Grant date | Jul 15, 2025 |
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Techniques for an on-memory die voltage regulator is disclosed. In the illustrative embodiment, a voltage regulator on a memory die is enabled upon receipt of a memory operation. The illustrative voltage regulator includes an analog controller that controls a shunt current based on a current output voltage of the voltage regulator. The illustrative voltage regulator also includes a digital controller that controls several switches based on the input voltage that control an effective resistance of part of the voltage regulator.
Opening claim text (preview).
The invention claimed is: 1. A memory die comprising: a voltage regulator; and controller circuitry to activate the voltage regulator in response to receipt of a memory operation, wherein the controller circuitry is to activate the voltage regulator in response to receipt of a memory write operation. 2. The memory die of claim 1 , wherein the voltage regulator is a linear voltage regulator. 3. The memory die of claim 2 , wherein a dropout of the voltage regulator is less than 100 millivolts. 4. The memory die of claim 1 , further comprising digital controller circuitry to control a digital state of one or more transistors based on an input voltage of the voltage regulator. 5. The memory die of claim 4 , further comprising analog controller circuitry to control a shunt current through a transistor based on an output voltage of the voltage regulator. 6. The memory die of claim 5 , wherein the analog controller circuitry is to control the shunt current through the transistor based on an efficiency parameter of the voltage regulator. 7. The memory die of claim 5 , wherein the analog controller circuitry comprises an operational amplifier, wherein the digital controller circuitry comprises a plurality of comparators. 8. The memory die of claim 7 , wherein the digital controller circuitry comprises a plurality of different reference voltages, wherein each of the plurality of different references voltages is connected to a first input of different comparator of the plurality of comparators, wherein the input voltage of the voltage regulator is connected to a second input of each of the plurality of comparators. 9. The memory die of claim 7 , wherein an output voltage of the voltage regulator is connected to a first input of the operational amplifier, wherein a target output voltage is connected to a second input of the operational amplifier, wherein an output of the operational amplifier is connected to a gate of the transistor, wherein a source of the transistor is connected to the output voltage of the voltage regulator, wherein a drain of the transistor is connected to a ground. 10. The memory die of claim 1 , wherein the controller circuitry is not to activate the voltage regulator in response to receipt of a memory read operation. 11. The memory die of claim 1 , wherein the voltage regulator has a settling time of less than one nanosecond. 12. An integrated circuit component comprising: a linear voltage regulator comprising: analog controller circuitry to control a shunt current through a transistor based on an output voltage of the linear voltage regulator, and digital controller circuitry to control a digital state of one or more transistors based on an input voltage of the linear voltage regulator, wherein the digital controller circuitry comprises a plurality of comparators, wherein the digital controller circuitry comprises a plurality of different reference voltages, wherein individual reference voltages of the plurality of different references voltages is connected to a first input of different comparator of the plurality of comparators, wherein the input voltage of the linear voltage regulator is connected to a second input of individual comparators of the plurality of comparators. 13. The integrated circuit component of claim 12 , wherein the analog controller circuitry comprises an operational amplifier. 14. The integrated circuit component of claim 13 , wherein the output voltage of the linear voltage regulator is connected to a first input of the operational amplifier, wherein a target output voltage is connected to a second input of the operational amplifier, wherein an output of the operational amplifier is connected to a gate of the transistor, wherein a source of the transistor is connected to the output voltage of the linear voltage regulator, wherein a drain of the transistor is connected to a ground. 15. The integrated circuit component of claim 12 , wherein the integrated circuit component is a memory die. 16. A memory die comprising: a linear voltage regulator comprising: analog controller circuitry to control a shunt current through a transistor based on an output voltage of the linear voltage regulator; and digital controller circuitry to control a digital state of one or more transistors based on an input voltage of the linear voltage regulator, wherein the analog controller circuitry and the digital controller circuitry generate a regulated voltage with a settling time of less than 1 nanosecond; and wherein the analog controller circuitry and the digital controller circuitry generate the regulated voltage with a variation of less than 100 millivolts. 17. The memory die of claim 16 , wherein the linear voltage regulator comprises circuitry for generating the regulated voltage at an efficiency of at least 70%. 18. The memory die of claim 16 , further comprising circuitry for controlling an efficiency of the linear voltage regulator. 19. The memory die of claim 16 , wherein the digital controller circuitry comprises a plurality of comparators, wherein the digital controller circuitry comprises a plurality of different reference voltages, wherein individual reference voltages of the plurality of different references voltages is connected to a first input of different comparator of the plurality of comparators, wherein the input voltage of the linear voltage regulator is connected to a second input of individual comparators of the plurality of comparators. 20. The memory die of claim 16 , wherein the analog controller circuitry comprises an operational amplifier.
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