Structure for emitting light, light-emitting diode (LED), and method of manufacturing a structure for emitting light

Patent metadata

Field	Value
Publication number	US-12356798-B2
Application number	US-202117471276-A
Country	US
Kind code	B2
Filing date	Sep 10, 2021
Priority date	Sep 10, 2021
Publication date	Jul 8, 2025
Grant date	Jul 8, 2025

Abstract

A structure for emitting light is provided. The structure comprises an emissive layer (EML) positioned between electrodes. The EML is tuned such that emission of a transverse electric (TE) waveguide mode from the EML is promoted. The structure further comprises an optical component for diffracting the TE waveguide mode to emit light from the structure.

First claim

What is claimed:

1. A light-emitting diode (LED) comprising:
an emissive layer (EML) positioned between first and second electrodes, wherein the EML is tuned such that emission of a transverse electric (TE) waveguide mode from the EML is promoted;
an optical component for diffracting the TE waveguide mode to emit light from the LED, the optical component comprising a diffraction grating;
a substrate upon which the first and second electrodes are positioned with the EML between the first and second electrodes, the substrate forming the diffraction grating, wherein the substrate is a corrugated substrate having a periodic surface relief having a depth of 70 nm;
an electron transport layer (ETL) positioned between the EML and the first electrode, the ETL having a thickness of 80 nm; and
a hole transport layer (HTL) positioned between the EML and the second electrode, the HTL having a thickness of 115 nm.

2. A structure for emitting light, the structure comprising:
an emissive layer (EML) positioned between first and second electrodes, wherein the EML is tuned such that emission of a transverse electric (TE) waveguide mode from the EML is promoted;
an optical component for diffracting the TE waveguide mode to emit light from the structure, the optical component comprising a diffraction grating;
a substrate upon which the first and second electrodes are positioned with the EML between the first and second electrodes, the substrate forming the diffraction grating, wherein the substrate is a corrugated substrate having a periodic surface relief having a depth of 70 nm;
an electron transport layer (ETL) positioned between the EML and the first electrode, the ETL having a thickness of 80 nm; and
a hole transport layer (HTL) positioned between the EML and the second electrode, the HTL having a thickness of 115 nm.

3. The structure of claim 2 , wherein at least one of a position of the EML between the first and second electrodes, a thickness of the EML, EML dipole orientation, and microcavity length is selected such that emission of the TE waveguide mode is promoted.

4. The structure of claim 2 , wherein the EML is tuned such that emission of modes other than the TE waveguide mode are suppressed.

5. The structure of claim 4 , wherein the other modes other than the TE waveguide mode comprise at least one of air mode, transverse magnetic (TM) waveguide mode, and surface plasmon polariton (SPP) mode.

6. The structure of claim 2 , wherein the diffraction grating comprises a 1D diffraction grating.

7. A method comprising:
tuning an emissive layer (EML) positioned between first and second electrodes of a structure such that emission of a transverse electric (TE) waveguide mode from the EML is promoted, the structure comprising:
an optical component for diffracting the TE waveguide mode to emit light from the structure, the optical component comprising a diffraction grating;
a substrate upon which the first and second electrodes are positioned with the EML between the first and second electrodes, the substrate forming the diffraction grating, wherein the substrate is a corrugated substrate having a periodic surface relief having a depth of 70 nm;
an electron transport layer (ETL) positioned between the EML and the first electrode, the ETL having a thickness of 80 nm; and
a hole transport layer (HTL) positioned between the EML and the second electrode, the HTL having a thickness of 115 nm.

8. The method of claim 7 , wherein tuning the EML comprises determining at least one of a position of the EML between the first and second electrodes, a thickness of the EML, EML dipole orientation, and microcavity length such that the TE waveguide mode is promoted.

9. The method of claim 8 , wherein at least one of the position of the EML between the first and second electrodes, the thickness of the EML, the EML dipole orientation, and microcavity length is determined based on a profile of one or more modes emitted by the EML, the modes including the TE waveguide mode.

10. The method of claim 7 , wherein tuning the EML comprises tuning the EML such that modes other than the TE waveguide mode are suppressed.

11. The method of claim 10 , wherein the modes other than the TE waveguide mode comprise at least one of air mode, transverse magnetic (TM) waveguide mode, and surface plasmon polariton (SPP) mode.

12. The method of claim 7 , wherein the diffraction grating is a 1D diffraction grating.

13. The method of claim 12 , wherein the second electrode is positioned on the corrugated substrate.

Assignees

• Nextgen Nano Ltd
• Univ North Carolina State

Inventors

• Stone Matthew
• So Franky
• Dong Qi
• Zhu Liping

Classifications

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K50/852

  comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title

• H10K50/868 Primary

  Arrangements for polarized light emission (H10K50/86 takes precedence) · CPC title

• G02B5/18

  Diffraction gratings {(holographic optical elements G02B5/32, G03H; integrally combined with optical fibres G02B6/02057; for coupling light guides G02B6/34; integrally combined with optical integrated light guides G02B6/12; grating systems G02B27/44)} · CPC title

• H10K50/822

  characterised by their shape · CPC title