Display device and light emitting device

Patent metadata

Field	Value
Publication number	US-12356790-B2
Application number	US-202217851211-A
Country	US
Kind code	B2
Filing date	Jun 28, 2022
Priority date	Jun 28, 2021
Publication date	Jul 8, 2025
Grant date	Jul 8, 2025

Abstract

An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λmax) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λmax) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1st λmax wavelength) that is less than an emission peak wavelength at the first voltage (λmax@first voltage) and an emission peak wavelength at the second voltage (λmax@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.

First claim

What is claimed is:

1. An electroluminescent display device comprising a blue pixel, wherein the electroluminescent display device comprises
a first electrode and a second electrode each having a surface opposite the other; and
a light emitting layer disposed between the first electrode and the second electrode,
wherein the light emitting layer comprises a blue light emitting layer disposed in the blue pixel and comprising a plurality of nanostructures, wherein the plurality of nanostructures does not comprise cadmium, wherein the blue light emitting layer is configured to exhibit an emission peak wavelength (λ max ) of greater than or equal to about 445 nanometers and less than or equal to about 480 nanometers upon application of a bias voltage between the first electrode and the second electrode,
wherein during a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λ max ) of the blue light emitting layer is configured to exhibit a first emission peak wavelength that is less than an emission peak wavelength at the first voltage and an emission peak wavelength at the second voltage,
wherein during the bias voltage change, a change width in the emission peak wavelength (λ max ) is less than or equal to about 4 nanometers.

2. The electroluminescent display device of claim 1 , wherein a difference between the emission peak wavelengths at the first and second voltages is less than about 4 nm.

3. The electroluminescent display device of claim 1 , further comprising a charge auxiliary layer including a hole auxiliary layer comprising an organic compound, and/or an electron auxiliary layer comprising metal oxide nanoparticles.

4. The electroluminescent display device of claim 1 , wherein
the plurality of nanostructures comprises a first semiconductor nanocrystal comprising zinc, selenium, and tellurium and a second semiconductor nanocrystal comprising a zinc chalcogenide containing zinc, selenium, and sulfur and different from the first semiconductor nanocrystal, and
in the plurality of nanostructures,
a mole ratio of tellurium to selenium is less than or equal to about 0.05:1 and greater than or equal to about 0.0021:1, and
a mole ratio of sulfur to selenium is greater than or equal to about 0.1:1 and less than or equal to about 1:1.

5. The electroluminescent display device of claim 1 , wherein
the plurality of nanostructures comprises a first semiconductor nanocrystal comprising zinc, selenium, and tellurium and a second semiconductor nanocrystal comprising a zinc chalcogenide containing zinc, selenium, and sulfur and different from the first semiconductor nanocrystal, and
in the plurality of nanostructures,
a mole ratio of tellurium to selenium is less than or equal to about 0.05:1 and greater than or equal to about 0.001:1, and
a mole ratio of sulfur to zinc is greater than or equal to about 0.23:1 and less than or equal to about 0.40:1.

6. The electroluminescent display device of claim 1 , wherein the blue light emitting layer has a minimum value of the first emission peak wavelength (1 st λ max ) at voltage A, wherein voltage A is greater than the first voltage and less than or equal to the second voltage.

7. The electroluminescent display device of claim 1 , wherein in the blue light emitting layer, a difference between the emission peak wavelength at the first voltage and the emission peak wavelength at the second voltage is less than or equal to about 3 nanometers.

8. The electroluminescent display device of claim 1 , wherein a full width at half maximum of an emission peak at the second voltage is less than a full width at half maximum of an emission peak at the first voltage.

9. The electroluminescent display device of claim 8 , wherein a difference between the full width at half maximum of the emission peak at the second voltage and the full width at half maximum of the emission peak at the first voltage is greater than or equal to about 1 nanometer.

10. The electroluminescent display device of claim 1 , wherein the change width in the emission peak wavelength (λ max ) is greater than or equal to about 1 nanometer.

11. The electroluminescent display device of claim 1 , wherein the display device further comprises a red pixel, a green pixel, or a red pixel and a green pixel, wherein the light emitting layer comprises a red light emitting layer disposed in the red pixel and comprising a plurality of red light emitting nanostructures, and/or a green light emitting layer disposed in the green pixel and comprising a plurality of green light emitting nanostructures.

12. A light emitting device, comprising
an anode and a cathode each having a surface opposite the other; and a blue light emitting layer disposed between the anode and the cathode and comprising a plurality of nanostructures, and
wherein the blue light emitting layer is configured to exhibit an emission peak wavelength of greater than or equal to about 445 nanometers and less than or equal to about 480 nanometers upon application of a bias voltage between the first electrode and the second electrode,
wherein during a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λ max ) of the blue light emitting layer is configured to exhibit a first emission peak wavelength that is less than an emission peak wavelength at the first voltage an emission peak wavelength at the second voltage,
wherein during the bias voltage change, a change width in the emission peak wavelength (λ max ) is less than or equal to about 4 nm.

13. The light emitting device of claim 12 , wherein a difference between the emission peak wavelengths at the first and second voltages is less than about 4 nm.

14. The light emitting device of claim 12 , further comprising an auxiliary layer including a hole transport layer comprising an organic polymer compound and the electron auxiliary layer comprises zinc magnesium metal oxide nanoparticles.

15. The light emitting device of claim 12 , wherein
the plurality of nanostructures comprises a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and tellurium and a semiconductor nanocrystal shell disposed on the core and comprising a zinc chalcogenide having a composition different from that of the first semiconductor nanocrystal, and
in the plurality of nanostructures,
a mole ratio of tellurium to selenium is less than or equal to about 0.05:1 and greater than or equal to about 0.0021:1, and
a mole ratio of sulfur to selenium is greater than or equal to about 0.1:1 and less than or equal to about 1:1.

16. The light emitting device of claim 12 , wherein in the blue emitting layer, a difference between the emission peak wavelength at the first voltage and the emission peak wavelength at the second voltage is less than or equal to about 3 nanometers.

17. The light emitting device of claim 12 , wherein a full width at half maximum of an emission peak at the second voltage is less than a full width at half maximum of an emission peak at the first voltage.

18. The light emitting device of claim 12 , wherein a difference between a full width at half maximum of an emission peak at the second voltage and a full width at half maximum of an emission peak at the first voltage is greater than or equal to about 1 nanometer, or wherein a change width in the emission peak wavelength is greater than or equal to about 1 nanom

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Tae Hyung
• Chung Heejae
• Jang Eun Joo
• Park Sujin
• Won Yuho

Classifications

• H10K2102/101

  comprising transparent conductive oxides [TCO] · CPC title

• H10K50/125

  specially adapted for multicolour light emission, e.g. for emitting white light · CPC title

• H10K50/15

  Hole transporting layers · CPC title

• C09K11/883

  with zinc or cadmium · CPC title

• H10K50/16

  Electron transporting layers · CPC title