Passivating contact structure and preparation method thereof, solar cell and preparation method thereof

Patent metadata

Field	Value
Publication number	US-12356756-B2
Application number	US-202318383097-A
Country	US
Kind code	B2
Filing date	Oct 24, 2023
Priority date	Jun 7, 2023
Publication date	Jul 8, 2025
Grant date	Jul 8, 2025

Abstract

The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.

First claim

What is claimed is:

1. A method for preparing a passivating contact structure, comprising:
forming a tunnel layer on a side of a substrate;
forming an initial stack structure on a side of the tunnel layer away from the substrate, wherein the initial stack structure includes a plurality of polysilicon layers and a plurality of doped layers alternately stacked with each other, in the initial stack structure, an innermost layer is a layer most adjacent to the tunnel layer, an outermost layer is a layer most away from the tunnel layer, the innermost layer and the outermost layer are two of the polysilicon layers, and the doped layers are polysilicon material layers doped with a dopant; and
activating the dopant in the doped layers, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of the dopant;
wherein before activating the dopant in the doped layers, the dopant concentration of regions of each doped layer adjacent to the polysilicon layers is smaller than the dopant concentration of a region of the each doped layer away from the polysilicon layers, and the dopant concentration of the regions of the each doped layer adjacent to the polysilicon layers is greater than the dopant concentration of the polysilicon layers.

2. The method according to claim 1 , wherein before activating the dopant in the doped layers, the dopant concentration of the each doped layer is symmetrically distributed from a central plane of the each doped layer to two sides of the each doped layer away from the central plane, and the distance between the central plane and one of the two sides of the each doped layer away from the substrate is equal to the distance between the central plane and the other one of two sides of the each doped layer adjacent to the substrate.

3. The method according to claim 1 , wherein the doped layers include a plurality of first doped polysilicon layers, and the plurality of first doped polysilicon layers are stacked in a direction away from the tunnel layer.

4. The method according to claim 3 , wherein the plurality of first doped polysilicon layers are arranged symmetrically about a central plane of the doped layers, and the dopant in every two of the plurality of first doped polysilicon layers that are symmetrically arranged is distributed symmetrically about the central plane, the distance between the central plane and one side of the doped layers away from the substrate is equal to the distance between the central plane and another side of the doped layers adjacent to the substrate.

5. The method according to claim 1 , wherein on a condition that the plurality of doped layers have the same dopant concentration, the thickness of the polysilicon layer between two adjacent doped layers is greater than each of the thickness of the polysilicon layer which is also the innermost layer and the thickness of the polysilicon layer which is also the outermost layer.

6. The method according to claim 1 , wherein each of the polysilicon layers includes an intrinsic polysilicon layer or a second doped polysilicon layer, and the dopant concentration of the second doped polysilicon layer is smaller than the dopant concentration of the doped layers.

7. The method according to claim 6 , wherein the innermost layer in the initial stack structure is the second doped polysilicon layer, and the dopant concentration of a region of the innermost layer adjacent to the tunnel layer is smaller than the dopant concentration of a region of the innermost layer away from the tunnel layer.

8. The method according to claim 6 , wherein the innermost layer in the initial stack structure is the second doped polysilicon layer, and a dopant position in the innermost layer is spaced from a surface of the innermost layer adjacent to the tunnel layer.

9. The method according to claim 6 , wherein the outermost layer in the initial stack structure is the second doped polysilicon layer, and a dopant position in the outermost layer is spaced from a surface of the outermost layer away from the tunnel layer.

10. The method according to claim 1 , wherein a refractive index of the doped layers is greater than a refractive index of the polysilicon layers.

11. The method according to claim 10 , wherein the refractive index of the doped layers is in a range from 4.1 to 4.5, and the refractive index of the polysilicon layers is in a range from 3.88 to 4.10.

12. The method according to claim 1 , wherein the dopant concentration of the doped stack structure is in a range from 1E20 atoms/cm 3 to 8E20 atoms/cm 3 , and a dopant concentration difference between any two regions in the doped stack structure is less than or equal to 2E20 atoms/cm 3 .

13. A method for preparing a solar cell, comprising:
provide a substrate;
forming a passivating contact structure on one side of the substrate by the method according to claim 1 .

Assignees

• Trina Solar Co Ltd

Inventors

• Liu Chengfa
• Chen Hong
• Zhang Yaqian
• Wu Xiaopeng
• Lu Yugang
• Zhang Shuai

Classifications

• H10F71/129 Primary

  Passivating · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F10/166

  the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells · CPC title

• H10F77/211 Primary

  for photovoltaic cells · CPC title

• H10F77/311

  for photovoltaic cells · CPC title