Infrared sensor using carbon nanotubes and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-12356754-B2
Application number	US-202017425794-A
Country	US
Kind code	B2
Filing date	Jan 17, 2020
Priority date	Jan 29, 2019
Publication date	Jul 8, 2025
Grant date	Jul 8, 2025

Abstract

An object of the present invention is to provide an infrared sensor having a high TCR value, and a method for manufacturing the infrared sensor. The infrared sensor comprises a substrate, a first electrode on the substrate, a second electrode spaced from the first electrode on the substrate, and a carbon nanotube layer electrically connected with the first electrode and the second electrode, wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount more than 66% by mass based on the total amount of carbon nanotubes and 60% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.6 to 1.5 nm and a length within a range of 100 nm to 5 μm.

First claim

What is claimed is:

1. A bolometer-type infrared sensor comprising:
a substrate;
a first electrode on the substrate;
a second electrode spaced from the first electrode on the substrate; and
a carbon nanotube layer electrically connected with the first electrode and the second electrode,
wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount of more than 66% by mass based on the total amount of carbon nanotubes, and 70% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.7 to 1.1 nm and a length within a range of 500 nm to 1.5 μm,
a distance between the first electrode and the second electrode is 10 μm to 500 μm,
a number density of the carbon nanotubes in the carbon nanotube layer is 1 nanotube/μm 2 to 1000 nanotubes/μm 2 , and
the carbon nanotubes form a network structure in the carbon nanotube layer.

2. The bolometer-type infrared sensor according to claim 1 , wherein the semiconducting carbon nanotubes have at least one surface functional group selected from carboxyl group, carbonyl group, and hydroxyl group at at least a surface of the carbon nanotube or an end of the nanotube.

3. The bolometer-type infrared sensor according to claim 1 , wherein the carbon nanotube layer comprises the semiconducting carbon nanotubes in an amount of 90% by mass or more based on the total amount of carbon nanotubes.

4. The bolometer-type infrared sensor according to claim 1 , wherein a thickness of the carbon nanotube layer is 1 nm or more and 10 μm or less.

5. The bolometer-type infrared sensor according to claim 1 , wherein a thickness of the carbon nanotube layer is 10 nm to 10 μm.

6. The bolometer-type infrared sensor according to claim 1 , wherein the number density of the carbon nanotubes in the carbon nanotube layer is 50 nanotubes/μm 2 to 300 nanotubes/μm 2 .

7. The bolometer-type infrared sensor according to claim 1 , further comprising 3-aminopropyltriethoxysilane (APTES) between the substrate and the carbon nanotube layer.

8. The bolometer-type infrared sensor according to claim 6 , further comprising 3-aminopropyltriethoxysilane (APTES) between the substrate and the carbon nanotube layer.

9. The bolometer-type infrared sensor according to claim 1 , further comprising a protective film on a surface of the carbon nanotube layer.

10. The bolometer-type infrared sensor according to claim 9 , wherein the protective film comprises an acrylic resin, an epoxy resin, or polytetrafluoroethylene (PTFE).

11. The bolometer-type infrared sensor according to claim 10 , wherein the protective film comprises PMMA.

12. The bolometer-type infrared sensor according to claim 6 , further comprising a protective film on a surface of the carbon nanotube layer.

13. The bolometer-type infrared sensor according to claim 1 , wherein 70% or more of the carbon nanotubes contained in the carbon nanotube layer have a length within a range of 700 nm to 1.5 μm.

14. The bolometer-type infrared sensor according to claim 1 , wherein 70% or more of the carbon nanotubes contained in the carbon nanotube layer have a length within a range of 0.8 μm to 1.2 μm.

15. The bolometer-type infrared sensor according to claim 1 , wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount of 99% or more by mass based on the total amount of carbon nanotubes.

16. The bolometer-type infrared sensor according to claim 1 , wherein 70% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.8 to 1.1 nm.

Assignees

• Nec Corp

Inventors

• Yuge Ryota
• Narita Kaoru
• Tanaka Tomo

Classifications

• H10K30/352

  the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F39/184

  Infrared image sensors · CPC title

• H10F77/1437

  Quantum wires or nanorods · CPC title

• H10F30/10

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title