Dual-purpose calibration system for optical pressure sensitive paint considering static and sinusoidal pressure changes, and calibration method
US-2020348201-A1 · Nov 5, 2020 · US
US12352647B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12352647-B2 |
| Application number | US-202318181574-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 10, 2023 |
| Priority date | Oct 9, 2022 |
| Publication date | Jul 8, 2025 |
| Grant date | Jul 8, 2025 |
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The disclosure discloses a measuring device for dynamic characteristics of pressure sensitive paint, including a PSP sample wafer, a dynamic pressure sensor, an oscilloscope, a light source, a photomultiplier tube, a bandpass filter, a loudspeaker, a power amplifier, and a signal generator. The disclosure further discloses a measuring method for dynamic characteristics of pressure sensitive paint. The disclosure has the following beneficial effects: by using the measuring device disclosed by the present disclosure, the continuous sinusoidal pressure wave with any frequency can be generated, and has the frequency precision that does not exceed 0.01 Hz, an optical path is not shielded, high stability is achieved, and the amplitude and phase characteristics of the pressure frequency of the PSP can be precisely captured.
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What is claimed is: 1. A measuring device for dynamic characteristics of pressure sensitive paint (PSP), comprising a PSP sample wafer, a dynamic pressure sensor, an oscilloscope, a light source, a photomultiplier tube, a bandpass filter, a loudspeaker, a power amplifier, and a signal generator, wherein an outer surface of the PSP sample wafer is sprayed with a PSP; the dynamic pressure sensor is mounted at a center of the PSP sample wafer, and an output end of the dynamic pressure sensor is connected to an input end of the oscilloscope; an emitting end of the light source directly faces an inner surface of the PSP sample wafer; a detection end of the photomultiplier tube is provided with the bandpass filter, and an output end of the photomultiplier tube is connected to the input end of the oscilloscope; and the loudspeaker directly faces the outer surface of the PSP sample wafer; and the loudspeaker, the power amplifier and the signal generator are connected in sequence. 2. The measuring device for dynamic characteristics of the PSP according to claim 1 , wherein the PSP sample wafer comprises an optical glass sheet, and an outer surface of the optical glass sheet is sprayed with the PSP; and lights emitted by the PSP and the light source are capable of passing through the optical glass sheet. 3. The measuring device for dynamic characteristics of the PSP according to claim 2 , wherein the optical glass sheet is provided with a central hole, the dynamic pressure sensor is mounted in the central hole, and the output end of the dynamic pressure sensor extends out from the central hole to be electrically connected to the input end of the oscilloscope. 4. The measuring device for dynamic characteristics of the PSP according to claim 2 , wherein the light source is a spot laser source. 5. The measuring device for dynamic characteristics of the PSP according to claim 4 , wherein a wavelength of light emitted by the light source is consistent with an excitation wavelength of the PSP. 6. The measuring device for dynamic characteristics of the PSP according to claim 2 , wherein the bandpass filter only allows a light emitting waveband of the PSP to pass and prevents ambient light and light emitted by the light source from entering the photomultiplier tube. 7. The measuring device for dynamic characteristics of the PSP according to claim 1 , wherein an optical detection frequency range of the photomultiplier tube covers a maximum response frequency of the PSP. 8. The measuring device for dynamic characteristics of the PSP according to claim 1 , wherein signals detected by the photomultiplier tube and the dynamic pressure sensor are synchronously recorded by the oscilloscope. 9. The measuring device for dynamic characteristics of the PSP according to claim 1 , wherein the loudspeaker directly faces the outer surface of the PSP sample wafer and sends a pressure wave to the outer surface of the PSP sample wafer, and a range of the pressure wave covers the PSP sample wafer. 10. A measuring method for dynamic characteristics of PSP, wherein the method comprises the following steps: step 1, providing the measuring device according to claim 1 ; step 2, turning on the light source, and irradiating a light emitted by the light source on the PSP after transmitting through the optical glass sheet so that the PSP emits light; step 3, turning on the signal generator and the loudspeaker, generating a sinusoidal wave electrical signal with a lower frequency Fref by the signal generator, sending the sinusoidal wave electrical signal to the loudspeaker after the sinusoidal wave electrical signal is amplified by the power amplifier so that a pressure wave with the same frequency is emitted; step 4, acquiring a fluctuant light emitting signal of the PSP by the photomultiplier tube, synchronously acquiring a fluctuant pressure signal of the PSP by the dynamic pressure sensor, measuring an amplitude Iref of the light emitting signal and an amplitude Pref of the pressure signal of the PSP by the oscilloscope, and calculating a phase difference Vref according to waveforms of the two signals; step 5, adjusting a frequency of the signal generator at a step length of 1 Hz to enable the loudspeaker to generate a sinusoidal pressure wave with a frequency Fi, and adjusting the power amplifier to enable the amplitude of the pressure signal generated by the loudspeaker to still be Pref; measuring an amplitude Ii and a phase difference Vi of the light emitting signal of the PSP at the moment by the oscilloscope; and step 6, repeatedly performing step 5, marking a corresponding frequency as a cut-off frequency of the PSP when the amplitude Ii is reduced to a half of Iref; and marking a corresponding frequency as a maximum frequency of the PSP when the amplitude Ii approaches to 0, wherein a phase difference of the corresponding frequencies is Vi-Vref.
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Investigating thin films, e.g. matrix isolation method · CPC title
Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature (G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26) · CPC title
by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis {using infrared, visible light, ultraviolet} · CPC title
Arrangements or apparatus for facilitating the optical investigation · CPC title
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