Low forming voltage OxRAM memory cell, and associated method of manufacture

Patent metadata

Field	Value
Publication number	US-12349609-B2
Application number	US-202017777494-A
Country	US
Kind code	B2
Filing date	Nov 17, 2020
Priority date	Nov 21, 2019
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed, then subsequently broken and reformed several times successively. The upper electrode includes a reservoir layer, capable of receiving oxygen, which includes an upper part made of a metal and a lower part made of a second oxide, the second oxide being an oxide of the metal and including a proportion of oxygen such that the second oxide is electrically conductive.

First claim

The invention claimed is:

1. An OxRAM (Oxide-based resistive Random Access Memory) resistive memory cell comprising a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode,
the active layer comprising at least one layer of a first electrically insulating oxide, wherein an electrically conductive filament is able to be formed, then subsequently broken and reformed several times successively,
the upper electrode comprising a reservoir layer capable of receiving oxygen, a portion at least of the reservoir layer being made of a metal,
wherein said reservoir layer comprises an upper part made of said metal and a lower part made of a second oxide, the second oxide being an oxide of said metal and comprising a proportion of oxygen such that the second oxide is electrically conductive, with an electrical conductivity greater than 100 Siemens per meter.

2. The OxRAM resistive memory cell according to claim 1 , wherein the reservoir layer comprises a proportion of oxygen that varies progressively from the lower part of the reservoir layer to its upper part.

3. The OxRAM resistive memory cell according to claim 1 , wherein:
the lower part of the reservoir layer is a first sub-layer made of said second oxide, and wherein
the upper part of the reservoir layer is a second sub-layer, distinct from the first sub-layer and made of said metal.

4. The OxRAM resistive memory cell according to claim 1 , the cell having been delimited laterally by etching, wherein the lower part of the reservoir layer, made of the second oxide, has a section that is larger than a section of the upper part of the reservoir layer, made of said metal.

5. The OxRAM resistive memory cell according to claim 1 , wherein said metal is one of the following metals: Titanium, Lanthanum, Aluminium, Zirconium, Hafnium, Gadolinium, Tantalum.

6. The OxRAM resistive memory cell according to claim 1 , wherein the first electrically insulating oxide is an oxide of a chemical element different from said metal.

7. The OxRAM resistive memory cell according to claim 1 , wherein said metal is Titanium and wherein the proportion of oxygen in the second oxide is less than 1.7 Oxygen atoms per Titanium atom.

8. The OxRAM resistive memory cell according to claim 1 , wherein the first electrically insulating oxide is a Silicon oxide.

Assignees

• Commissariat Energie Atomique
• Weebit Nano Ltd
• Commissariat A Lenergie Atomizue Et Aux Energies Alternatives

Inventors

• Molas Gabriel
• Magis Thomas
• Nodin Jean-François
• Bricalli Alessandro
• Piccolboni Guiseppe
• Cohen Yifat
• Regev Amir

Classifications

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/063

  by etching of pre-deposited switching material layers, e.g. lithography · CPC title

• H10N70/24

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/841 Primary

  Electrodes · CPC title