Three-terminal electro-chemical memory cell with vertical structure for neuromorphic computation and memory cell array including the same
US-2022375994-A1 · Nov 24, 2022 · US
Three-terminal synaptic device
US12349606B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12349606-B2 |
| Application number | US-202217827234-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 27, 2022 |
| Priority date | Nov 26, 2021 |
| Publication date | Jul 1, 2025 |
| Grant date | Jul 1, 2025 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.
First claim
Opening claim text (preview).
The invention claimed is: 1. A three-terminal synaptic device comprising: a substrate; a source electrode and a drain electrode provided on the substrate and spaced apart from each other; a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer configured to store active ions; a gate electrode provided on the ion reservoir layer; an ion barrier layer disposed between the ion reservoir layer and the channel layer, the ion barrier configured to control movement of active ions between the ion reservoir layer and the channel layer; and an electrolyte layer provided between the ion reservoir layer and the ion barrier layer. 2. The three-terminal synaptic device of claim 1 , wherein the ion barrier layer comprises a two-dimensional material. 3. The three-terminal synaptic device of claim 2 , wherein the ion barrier layer comprises graphene or tungsten disulfide. 4. The three-terminal synaptic device of claim 1 , wherein the ion barrier layer comprises a metal oxide. 5. The three-terminal synaptic device of claim 4 , wherein the ion barrier layer comprises aluminum oxide (Al 2 O 3 ). 6. The three-terminal synaptic device of claim 5 , wherein the three-terminal synaptic device includes a conductance value of tens of nano siemens.
Assignees
Inventors
Classifications
- H10N70/245Primary
the species being metal cations, e.g. programmable metallization cells · CPC title
based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title
- H10N70/253Primary
having three or more electrodes, e.g. transistor-like devices · CPC title
Binary metal oxides, e.g. TaOx · CPC title
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- What does patent US12349606B2 cover?
- A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion re…
- Who is the assignee on this patent?
- Hyundai Motor Co Ltd, Kia Corp, Postech Res & Business Dev Found
- What technology area does this patent fall under?
- Primary CPC classification H10N70/245. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 01 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).