Lithium niobate semiconductor structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-12349595-B2
Application number	US-202017771351-A
Country	US
Kind code	B2
Filing date	Dec 28, 2020
Priority date	Dec 10, 2020
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

A lithium niobate semiconductor structure includes: a first lithium niobate material layer, a second lithium niobate material layer and a third lithium niobate material layer. A polarization direction of a ferroelectric domain of the first lithium niobate material layer is a first direction. The second lithium niobate material layer is spaced apart from the first lithium niobate material layer, and a polarization direction of a ferroelectric domain of the second lithium niobate material layer is the first direction. The third lithium niobate material layer is sandwiched between the first lithium niobate material layer and the second lithium niobate material layer, and a polarization direction of a ferroelectric domain of the third lithium niobate material layer is a second direction; the first direction is opposite to the second direction.

First claim

What is claimed is:

1. A lithium niobate semiconductor structure, comprising:
a first lithium niobate material layer, a polarization direction of a ferroelectric domain of the first lithium niobate material layer being a first direction;
a second lithium niobate material layer, spaced apart from the first lithium niobate material layer, and a polarization direction of a ferroelectric domain of the second lithium niobate material layer being the first direction;
a third lithium niobate material layer, sandwiched between the first lithium niobate material layer and the second lithium niobate material layer, and a polarization direction of a ferroelectric domain of the third lithium niobate material layer being a second direction, the first direction being opposite to the second direction;
a first conductive domain wall layer, provided between the first lithium niobate material layer and the third lithium niobate material layer; and
a second conductive domain wall layer, provided between the second lithium niobate material layer and the third lithium niobate material layer, carriers of the first conductive domain wall layer have an opposite polarity to carriers of the second conductive domain wall layer.

2. The lithium niobate semiconductor structure according to claim 1 , further comprising:
a first electrode layer, covering the first lithium niobate material layer and adjacent to the first conductive domain wall layer;
a second electrode layer, spaced apart from the first electrode layer, covering the second lithium niobate material layer, and adjacent to the second conductive domain wall layer.

3. The lithium niobate semiconductor structure according to claim 2 , wherein the first electrode layer is electrically connected to the first conductive domain wall layer, and the second electrode layer is electrically connected to the second conductive domain wall layer.

4. The lithium niobate semiconductor structure according to claim 1 , further comprising a substrate, wherein the first lithium niobate material layer, the second lithium niobate material layer, and the third lithium niobate material layer are provided on a surface of the substrate.

5. The lithium niobate semiconductor structure according to claim 4 , wherein the first lithium niobate material layer, the second lithium niobate material layer and the third lithium niobate material layer each has a single-domain structure.

6. The lithium niobate semiconductor structure according to claim 1 , wherein the first lithium niobate material layer, the second lithium niobate material layer and the third lithium niobate material layer are X-cut magnesium-doped lithium niobate material layers or Y-cut magnesium-doped lithium niobate material layers.

7. A lithium niobate semiconductor device, comprising:
a substrate;
a lithium niobate material film fitted to a surface of the substrate, the lithium niobate material film comprising:
a first lithium niobate material layer fitted to the surface of the substrate, a polarization direction of a ferroelectric domain of the first lithium niobate material layer being a first direction;
a second lithium niobate material layer fitted to the surface of the substrate and spaced apart from the first lithium niobate material layer, a polarization direction of a ferroelectric domain of the second lithium niobate material layer being the first direction;
a third lithium niobate material layer fitted to the surface of the substrate and sandwiched between the first lithium niobate material layer and the second lithium niobate material layer, a polarization direction of a ferroelectric domain of the third lithium niobate material layer being a second direction, and the first direction being opposite to the second direction;
wherein the third lithium niobate material layer is in contact with and electrically connected to two conductive domain wall layers spaced apart from and opposed to each other, the two conductive domain wall layers being respectively in contact with the first lithium niobate material layer and the second lithium niobate material layer;
a first conductive domain wall layer, provided between the first lithium niobate material layer and the third lithium niobate material layer; and
a second conductive domain wall layer, provided between the second lithium niobate material layer and the third lithium niobate material layer, the carriers of the first conductive domain wall layer have an opposite polarity to the carriers of the second conductive domain wall layer.

8. The lithium niobate semiconductor structure according to claim 7 , further comprising:
a first electrode layer, covering the first lithium niobate material layer and adjacent to the first conductive domain wall layer;
a second electrode layer, spaced apart from the first electrode layer, covering the second lithium niobate material layer, and adjacent to the second conductive domain wall layer.

9. The lithium niobate semiconductor structure according to claim 8 , wherein the first electrode layer is electrically connected to the first conductive domain wall layer, and the second electrode layer is electrically connected to the second conductive domain wall layer.

10. The lithium niobate semiconductor device according to claim 7 , wherein the first lithium niobate material layer, the second lithium niobate material layer and the third lithium niobate material layer are formed by one complete lithium niobate material film.

11. The lithium niobate semiconductor device according to claim 7 , wherein the lithium niobate material film has a single-domain structure.

Assignees

• Univ Nankai

Inventors

• Zhang Guoquan
• Qian Yuezhao
• Zhang Yuchen
• Xu Jingjun

Classifications

• H10N30/01

  Manufacture or treatment · CPC title

• H10N30/045

  by polarising · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10N30/8542 Primary

  Alkali metal based oxides, e.g. lithium, sodium or potassium niobates · CPC title