Light-emitting device including inorganic mixed layer and electronic apparatus including the same

Patent metadata

Field	Value
Publication number	US-12349533-B2
Application number	US-202117450820-A
Country	US
Kind code	B2
Filing date	Oct 13, 2021
Priority date	Nov 10, 2020
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

A light-emitting device and an electronic apparatus including the same are provided. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode and including an emission layer; and m−1 charge generation layers each between two neighboring emission units from among the m emission units, wherein m is an integer of 2 or more, at least one of the m emission units includes an inorganic mixed layer between the first electrode and the emission layer, and the inorganic mixed layer includes an inorganic insulating material and an inorganic semiconductor material.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode;
m emission units sequentially stacked between the first electrode and the second electrode and comprising an emission layer; and
m−1 charge generation layers each located between two neighboring emission units from among the m emission units,
wherein m is an integer of 2 or more,
at least one of the m emission units comprises an inorganic mixed layer between the first electrode and the emission layer,
the inorganic mixed layer comprises an inorganic insulating material and an inorganic semiconductor material, and
at least another one of the m emission units comprises a hole injection layer comprising a hole transporting organic compound mixed together with an inorganic semiconductor material at a volume ratio of 99:1 to 80:20.

2. The light-emitting device of claim 1 , wherein
the first electrode is an anode,
the second electrode is a cathode, and
a first emission unit, closest to the first electrode from among the m emission units, comprises the inorganic mixed layer.

3. The light-emitting device of claim 1 , wherein
the first electrode is an anode,
the second electrode is a cathode,
a first emission unit closest to the first electrode from among the m emission units comprises a first emission layer and a first hole transport region between the first electrode and the first emission layer, and
the first hole transport region comprises the inorganic mixed layer.

4. The light-emitting device of claim 3 , wherein the inorganic mixed layer is directly contacting the first electrode.

5. The light-emitting device of claim 3 , wherein the first hole transport region further comprises a first hole transport layer and a second hole transport layer, which are between the first emission layer and the inorganic mixed layer, and
the second hole transport layer is between the first hole transport layer and the first emission layer.

6. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode;
m emission units sequentially stacked between the first electrode and the second electrode and comprising an emission layer; and
m−1 charge generation layers each located between two neighboring emission units from among the m emission units,
wherein m is an integer of 2 or more,
at least one of the m emission units comprises an inorganic mixed layer between the first electrode and the emission layer,
the inorganic mixed layer comprises an inorganic insulating material and an inorganic semiconductor material,
the first electrode is an anode,
the second electrode is a cathode,
an n th emission unit from among the m emission units comprises the inorganic mixed layer, and
n is an integer satisfying 1<n≤m, and
at least another one of the m emission units comprises a hole injection layer comprising a hole transporting organic compound mixed together with an inorganic semiconductor material at a volume ratio of 99:1 to 80:20.

7. The light-emitting device of claim 1 , wherein
the first electrode is an anode,
the second electrode is a cathode,
an n th emission unit from among the m emission units comprises an n th emission layer and an n th hole transport region between the first electrode and the n th emission layer,
n is an integer satisfying 1<n≤m, and
the n th hole transport region comprises the inorganic mixed layer.

8. The light-emitting device of claim 1 , wherein the inorganic insulating material comprises a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal (III), a halide of a Group 13 post-transition metal, or any combination thereof.

9. The light-emitting device of claim 1 , wherein the inorganic insulating material comprises a fluoride of an alkali metal, a chloride of an alkali metal, a bromide of an alkali metal, an iodide of an alkali metal, a fluoride of an alkaline earth metal, a chloride of an alkaline earth metal, a bromide of an alkaline earth metal, an iodide of an alkaline earth metal, a fluoride of a lanthanide metal (III), a chloride of a lanthanide metal (III), a bromide of a lanthanide metal (III), an iodide of a lanthanide metal (III), a fluoride of a Group 13 post-transition metal, a chloride of a Group 13 post-transition metal, a bromide of a Group 13 post-transition metal, an iodide of a Group 13 post-transition metal, or any combination thereof.

10. The light-emitting device of claim 1 , wherein the inorganic semiconductor material comprises a halide of a transition metal; a halide of a Group 14, Group 15, or Group 16 post-transition metal; a halide of a lanthanide metal (II); tellurium (Te); a telluride of a transition metal; a telluride of a post-transition metal; a telluride of a lanthanide metal (II); selenium (Se); a selenide of a transition metal; a selenide of a post-transition metal; a selenide of a lanthanide metal (II); or any combination thereof.

11. The light-emitting device of claim 1 , wherein a volume ratio of the inorganic insulating material to the inorganic semiconductor material is in a range of 99:1 to 50:50.

12. The light-emitting device of claim 1 , wherein a thickness of the inorganic mixed layer is in a range of 1 Å to 200 Å.

13. The light-emitting device of claim 1 , wherein
the m−1 charge generation layers each include an n-type charge generation layer and a p-type charge generation layer, the n-type charge generation layer comprises a first material and a second material,
the first material comprises an electron transporting organic compound, and
the second material comprises an alkali metal, an alkaline earth metal, a lanthanide metal, a transition metal, a post-transition metal, or any combination thereof.

14. The light-emitting device of claim 1 , wherein
the m−1 charge generation layers each comprise an n-type charge generation layer and a p-type charge generation layer,
the p-type charge generation layer comprises a third material and a fourth material,
the third material comprises a hole transporting organic compound, and
the fourth material comprises a post-transition metal, an inorganic semiconductor material, a charge-generation material, or any combination thereof.

15. The light-emitting device of claim 1 , wherein
the first electrode is an anode,
the second electrode is a cathode,
the m emission units each further comprise a hole transport region between the first electrode and the emission layer and an electron transport region between the emission layer and the second electrode,
the hole transport region of each of the m emission units comprises a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof, and
the electron transport region of each of the m emission units comprises a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

16. The light-emitting device of claim 15 , wherein
at least another one of the hole transport regions of the m emission units comprises a hole injection layer, and
the hole injection layer comprises a hole transporting organic compound or comprises a hole transporting organic compound and an inorganic semiconductor material.

17. The light-emitting device of claim 1 , wherein
m is 4,
the m emission units comprise a first emission unit, a second emission unit, a third emission unit, and a fourth emission unit, which are sequentially stacked in a direction

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dongchan
• Lee Donghui
• Lee Chulsoon
• Lee Haemyeong
• Han Wonsuk
• Ka Yoonseok
• Moon Jiyoung
• Yoon Jihwan
• Yoon Heechang
• Lee Jihye
• Lee Hakchoong
• Cho Yoonhyeung
• Han Myungsuk

Classifications

• H10K59/875

  Arrangements for extracting light from the devices · CPC title

• H10K50/17

  Carrier injection layers · CPC title

• H10K2102/00

  Constructional details relating to the organic devices covered by this subclass · CPC title

• H10K59/38

  comprising colour filters or colour changing media [CCM] · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title