Solar cell and manufacturing method thereof, photovoltaic module, and photovoltaic system

Patent metadata

Field	Value
Publication number	US-12349498-B2
Application number	US-202418768660-A
Country	US
Kind code	B2
Filing date	Jul 10, 2024
Priority date	Aug 25, 2023
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The manufacturing method includes: providing a substrate; and dividing a second surface of the substrate into a first region, a second region, and an isolation region; sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate; removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region; doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.

First claim

The invention claimed is:

1. A manufacturing method for a solar cell, comprising:
providing a substrate, wherein the substrate has a first surface and a second surface arranged oppositely, and the second surface includes a first region, a second region, and an isolation region located between the first region and the second region;
sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate and in a direction away from the substrate, wherein each of the first tunnel oxide layer, the first intrinsic amorphous silicon layer, the second tunnel oxide layer, and the second intrinsic amorphous silicon layer is partially located in each of the first region, the second region and the isolation region;
removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region;
doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; and doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and
forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.

2. The manufacturing method for the solar cell according to claim 1 , further comprising:
prior to the removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region,
sequentially stacking a doping source layer and a first protective layer on a side of the second intrinsic amorphous silicon layer facing away from the substrate, wherein the doping source layer is configured to provide the first element required for doping.

3. The manufacturing method for the solar cell according to claim 2 , wherein the removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region, specifically comprises:
removing, by laser, the first protective layer, the doping source layer, and part of the second intrinsic amorphous silicon layer facing away from the second tunnel oxide layer that are located in the second region; and
removing, by a wet process, the remaining second intrinsic amorphous silicon layer located in the second region and adjacent to the second tunnel oxide layer and the second tunnel oxide layer located in the second region.

4. The manufacturing method for the solar cell according to claim 3 , wherein the removing, by a wet process, the remaining second intrinsic amorphous silicon layer located in the second region and adjacent to the second tunnel oxide layer and the second tunnel oxide layer located in the second region, specifically comprises:
removing, by the wet process, the remaining second intrinsic amorphous silicon layer located in the second region and adjacent to the second tunnel oxide layer;
forming a mask layer on a side of the first protective layer located in the first region facing away from the substrate;
removing, by the wet process, the second tunnel oxide layer located in the second region; and
removing the mask layer.

5. The manufacturing method for the solar cell according to claim 3 , wherein the doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; and doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer, specifically comprises:
at a preset temperature, doping, by the doping source layer, the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer with the first element for a preset duration, to obtain the first doped layer and the second doped layer respectively; and
doping the first intrinsic amorphous silicon layer located in the second region with the second element, to obtain the third doped layer.

6. The manufacturing method for the solar cell according to claim 5 , further comprising: subsequent to the doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; and doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer,
removing the doping source layer and the first protective layer.

7. The manufacturing method for the solar cell according to claim 1 , further comprising: prior to the removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region,
forming a second protective layer on a side of the second intrinsic amorphous silicon layer facing away from the substrate.

8. The manufacturing method for the solar cell according to claim 7 , wherein the removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region, specifically comprises:
removing, by laser, the second protective layer located in the second region and part of the second intrinsic amorphous silicon layer facing away from the second tunnel oxide layer; and
removing, by a wet process, the remaining second intrinsic amorphous silicon layer located in the second region and adjacent to the second tunnel oxide layer and the second tunnel oxide layer located in the second region.

9. The manufacturing method for the solar cell according to claim 8 , wherein the removing, by a wet process, the remaining second intrinsic amorphous silicon layer located in the second region and adjacent to the second tunnel oxide layer and the second tunnel oxide layer located in the second region, specifically comprises:
removing, by the wet process, the remaining second intrinsic amorphous silicon layer located in the second region and adjacent to the second tunnel oxide layer;
forming a mask layer on a side of the second protective layer located in the first region facing away from the substrate;
removing, by the wet process, the second tunnel oxide layer located in the second region; and
removing the mask layer.

10. The manufacturing method for the solar cell according to claim 8 , wherein the doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; and doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer, specifically comprises:
doping the first intrinsic amorphous silicon layer located in the second region with the second element, to obtain the third doped layer;
forming a third protective layer on a side of the third doped layer facing away from the substrate; and
removing the second protective layer located in the first region, and doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with the first element, to obtain the first doped layer and the second doped layer.

11. The manufacturing method for the solar cell according to claim 10 , f

Assignees

• Trina Solar Co Ltd

Inventors

• Han Binglun
• Chen Daming
• Yang Guangtao

Classifications

• H10F77/315

  the coatings being antireflective or having enhancing optical properties · CPC title

• H10F71/103

  including only Group IV materials · CPC title

• H10F71/10

  the devices comprising amorphous semiconductor material · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F77/311

  for photovoltaic cells · CPC title