Multi-physical field measurement device for metal solidification process and housing thereof, and measurement method

US12345666B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12345666-B2
Application numberUS-202118017001-A
CountryUS
Kind codeB2
Filing dateJun 11, 2021
Priority dateJul 27, 2020
Publication dateJul 1, 2025
Grant dateJul 1, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A multi-physical field measurement device for a metal solidification process and a housing and a measurement method thereof are provided. The device includes: a sealed housing provided with a light-through hole; a heater provided inside the housing and located behind the light-through hole along an X-ray; a diffraction detector used for receiving the X-ray which penetrates through a sample sheet and is scattered; a CMOS camera located behind the heater along the X-ray (11) and used for receiving a visible light signal which penetrates through the sample sheet; a silicon drift X-ray detector located at one side of the X-ray and used for receiving a fluorescent signal sent by interaction between the X-ray and the sample sheet; and an infrared thermal imager located at the other side of the X-ray and used for receiving an infrared signal sent by the sample sheet.

First claim

Opening claim text (preview).

What is claimed is: 1. A multi-physical field measurement device for a metal solidification process, comprising: a sealed housing, provided with a light-through hole for allowing an external X-ray to be emitted into an inside of the housing; a heater, provided inside the housing, located behind the light-through hole along the X-ray, and configured for heating a to-be-detected sample; a diffraction detector, configured for receiving the X-ray which penetrates through the sample and is scattered; a CMOS camera, located behind the heater along the X-ray and configured for receiving a visible light signal which penetrates through the sample; a silicon drift X-ray detector, located at one side of the X-ray and configured for receiving a fluorescent signal sent by interaction between the X-ray and the sample; and an infrared thermal imager, located at the other side of the X-ray and configured for receiving an infrared signal sent by the sample; wherein the multi-physical field measurement device performs a measurement method which comprising following steps of: heating the to-be-detected sample by the heater, adjusting the X-ray to be emitted into the inside of the housing through the light-through hole and to irradiate the sample, converting the X-ray penetrating through the sample into the visible light signal, receiving the visible light signal by the CMOS camera, to obtain an image of dendritic crystal morphology of the sample solidification process; the diffraction detector receiving the X-ray which penetrates through the sample and is scattered, so as to realize qualitative analysis, lattice constant determination and stress measurement of a matter structure; the infrared thermal imager receiving the infrared signal sent by the sample to realize temperature measurement of a sample micro region; and the silicon drift X-ray detector receiving the fluorescent signal sent by interaction between the X-ray irradiated on the sample and the sample to realize quantitative measurement of element ingredient of the sample. 2. The multi-physical field measurement device for a metal solidification process according to claim 1 , further comprising a scintillator which is located behind the heater along the X-ray and in front of the CMOS camera, wherein the X-ray penetrating through the sample passes through the scintillator to form the visible light signal which is then received by the CMOS camera. 3. The multi-physical field measurement device for a metal solidification process according to claim 2 , further comprising an optical lens group configured for amplifying the visible light signal and reflecting the visible light signal to be received by the CMOS camera, wherein the optical lens group is located behind the scintillator along the X-ray, and the CMOS camera is configured for receiving the visible light signal reflected by the optical lens group. 4. The multi-physical field measurement device for a metal solidification process according to claim 1 , further comprising a baffle with a small hole, provided between the heater and the silicon drift X-ray detector, wherein the fluorescent signal passes through the small hole to be received by the silicon drift X-ray detector. 5. The multi-physical field measurement device for a metal solidification process according to claim 1 , wherein the diffraction detector, the CMOS camera, the silicon drift X-ray detector, and the infrared thermal imager are all located outside the housing, and windows configured for allowing the signals to penetrate therethrough are provided at corresponding positions on the housing. 6. The multi-physical field measurement device for a metal solidification process according to claim 1 , wherein a top and a tail of the housing are respectively provided with a third window and a fifth window configured for placing the diffraction detector. 7. The multi-physical field measurement device for a metal solidification process according to claim 1 , further comprising a PC terminal provided outside the housing, wherein the PC terminal is connected with the diffraction detector, the CMOS camera, the silicon drift X-ray detector and the infrared thermal imager, respectively. 8. The multi-physical field measurement device for a metal solidification process according to claim 7 , further comprising a micro-motion displacement platform configured for moving the sample. 9. The multi-physical field measurement device for a metal solidification process according to claim 8 , further comprising a controller provided outside the housing, wherein the controller is connected with the heater, the micro-motion displacement platform and the PC terminal, respectively. 10. The multi-physical field measurement device for a metal solidification process according to claim 1 , further comprising a cooling assembly configured for reducing an internal temperature of the housing; and/or, the multi-physical field measurement device further comprises a vacuum pump provided outside the housing, the vacuum pump is communicated with the housing, and a gas flowmeter is provided on a communication pipeline. 11. The multi-physical field measurement device for a metal solidification process according to claim 1 , wherein the housing is made of stainless steel, and an inner surface thereof is a frosted surface; and/or, a viewing window is provided on the housing; and/or an openable cabin door is provided on the housing. 12. The multi-physical field measurement device for a metal solidification process according to claim 1 , comprising: a vacuum water-cooling cavity system, comprising a housing and a cooling assembly provided in the housing and configured for reducing an internal temperature of the housing, wherein a front end of the housing is provided with a light-through hole for allowing the external X-ray to be emitted into the inside of the housing, a left side of the housing is provided with a high-temperature resistant glass viewing window, and the housing is provided with an openable cabin door configured for facilitating adjustment of a sample; a sample temperature control system, comprising a heater which is provided inside the housing, located behind the light-through hole along the X-ray and configured for fixing and heating the to-be-detected sample; a sample transmission system, comprising a micro-motion displacement platform provided below the heater and configured for moving the heater and changing a position of the sample fixed thereto; a synchronous X-radiation detector system, comprising a diffraction detector configured for receiving the X-ray penetrating through the sample and scattered, a CMOS camera configured for measuring a flow field in the metal solidification process, a silicon drift X-ray detector configured for measuring a solute field in the metal solidification process, and an infrared thermal imager configured for measuring a temperature field in the metal solidification process, wherein the diffraction detector is provided at a top of a cavity and/or a tail of the cavity, the CMOS camera is located behind the heater along the X-ray, the silicon drift X-ray detector is located at one side of the X-ray and configured for receiving the fluorescent signal emitted by interaction between the X-ray and the sample, and the infrared thermal imager is located at the other side of the X-ray and configured for receiving an infrared signal sent by the sample; and a data collection and analysis system, comprising a PC terminal and a controller which are provided outside the housing, wherein the PC terminal is connected with the diffraction detector, the CMOS camera, the silicon drift X-ray detector and the infrared thermal imager re

Assignees

Inventors

Classifications

  • by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence · CPC title

  • provided with temperature control or heating means · CPC title

  • Heating; Thermostating · CPC title

  • Imaging · CPC title

  • by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats · CPC title

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What does patent US12345666B2 cover?
A multi-physical field measurement device for a metal solidification process and a housing and a measurement method thereof are provided. The device includes: a sealed housing provided with a light-through hole; a heater provided inside the housing and located behind the light-through hole along an X-ray; a diffraction detector used for receiving the X-ray which penetrates through a sample shee…
Who is the assignee on this patent?
Univ Shanghai Jiaotong
What technology area does this patent fall under?
Primary CPC classification G01N23/2076. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 01 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).