Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using same

US12338381B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12338381-B2
Application numberUS-201916976565-A
CountryUS
Kind codeB2
Filing dateFeb 27, 2019
Priority dateMar 2, 2018
Publication dateJun 24, 2025
Grant dateJun 24, 2025

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The present invention pertains to a protective fluid for alumina, a protection method, and a production method for semiconductor substrate having an alumina layer using same. This alumina protective fluid is characterized by: containing 0.0001%-20% by mass of an alkali earth metal compound; and the alkali earth metal being at least one selected from the group consisting of beryllium, magnesium, strontium, and barium. As a result of the present invention, alumina corrosion can be suppressed during the production process for semiconductor circuits.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for protecting alumina, the method comprising: treating at least a portion of a surface of an alumina layer comprising alumina with a protective fluid consisting of (i) water and (ii) barium nitrate, barium acetate, and/or barium chloride in a range of from more than 1 to 20 wt. % together, based on total protective fluid weight, to thereby form a fluid film on the portion of the surface of the alumina layer; and washing over the fluid film and the alumina layer with an optionally corrosive washing solution, wherein the treating is at a temperature in a range of from 30 to 60° C. for a time in a range of from 0.2 to less than 60 minutes. 2. A method for producing a semiconductor substrate having an alumina layer, the method comprising: protecting alumina comprised in the alumina layer using the method of claim 1 . 3. A method for producing a semiconductor substrate having an alumina layer, the method comprising: protecting alumina comprised in the alumina layer by treating the alumina layer with the protective fluid consisting of (i) water and (ii) barium nitrate, barium acetate, and/or barium chloride in a range of from more than 1 to 20 wt. % together, based on total protective fluid weight, to thereby form a fluid film on the portion of the surface of the alumina layer; and washing over the fluid film and the alumina layer with an optionally corrosive washing solution, wherein the treating is at a temperature in a range of from 30 to 60° C. for a time in a range of from 0.2 to less than 60 minutes. 4. The method of claim 1 , wherein the alumina is in an alumina layer. 5. The method of claim 1 , wherein the barium nitrate is present in the protective fluid. 6. The method of claim 2 , wherein the barium nitrate is present in the protective fluid. 7. The method of claim 3 , wherein the barium nitrate is present in the protective fluid. 8. The method of claim 1 , wherein the barium acetate is present in the protective fluid. 9. The method of claim 2 , wherein the barium acetate is present in the protective fluid. 10. The method of claim 3 , wherein the barium acetate is present in the protective fluid. 11. The method of claim 1 , wherein the barium chloride is present in the protective fluid. 12. The method of claim 2 , wherein the barium chloride is present in the protective fluid. 13. The method of claim 3 , wherein the barium chloride is present in the protective fluid. 14. The method of claim 1 , wherein the barium nitrate, the barium acetate, and/or the barium chloride are present in the protective fluid is from 1.5 to 10% by mass. 15. The method of claim 2 , wherein the barium nitrate, the barium acetate, and/or the barium chloride are present in the protective fluid is from 1.5 to 10% by mass. 16. The method of claim 3 , wherein the barium nitrate, the barium acetate, and/or the barium chloride are present in the protective fluid is from 1.5 to 10% by mass. 17. The method of claim 1 , wherein the barium nitrate, the barium acetate, and the barium chloride are present in the protective fluid. 18. The method of claim 1 , wherein the barium nitrate, the barium acetate, and/or the barium chloride, together, are present in the protective fluid in a range of from 1 to 2% by mass. 19. The method of claim 1 , wherein the treating is at a temperature in a range of from 30 to 55° C. 20. The method of claim 1 , wherein the treating is at a temperature in a range of from 40 to 55° C.

Assignees

Inventors

Classifications

  • H10P70/23Primary

    during, before or after processing of insulating materials · CPC title

  • of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

  • of Group IV materials · CPC title

  • Making the insulator · CPC title

  • characterised by their composition, e.g. multilayer masks · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US12338381B2 cover?
The present invention pertains to a protective fluid for alumina, a protection method, and a production method for semiconductor substrate having an alumina layer using same. This alumina protective fluid is characterized by: containing 0.0001%-20% by mass of an alkali earth metal compound; and the alkali earth metal being at least one selected from the group consisting of beryllium, magnesium,…
Who is the assignee on this patent?
Mitsubishi Gas Chemical Co
What technology area does this patent fall under?
Primary CPC classification H10P70/23. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 24 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).