Composite material, quantum dot light-emitting diode and preparation method thereof

Patent metadata

Field	Value
Publication number	US-12338378-B2
Application number	US-202217850388-A
Country	US
Kind code	B2
Filing date	Jun 27, 2022
Priority date	Dec 31, 2019
Publication date	Jun 24, 2025
Grant date	Jun 24, 2025

Abstract

A composite material, quantum dot light-emitting diode and preparation method thereof. The preparation method includes: providing ZnO nanoparticles and Au source, Au source is at least one of bulk Au or Au particles; mixing ZnO nanoparticles, Au source, S source with first organic solvent, performing hydrothermal reaction to prepare composite material. By performing hydrothermal reaction in organic solvent using ZnO nanoparticles, bulk Au and/or Au particles, and S source, S source can vulcanize surface of ZnO nanoparticles to form ZnS layer on surface of ZnO nanoparticles, Au source can be thermally dissolved and diffused into isolated distribution of atomic-level Au to realize loading on surface of ZnS layer, to obtain composite material with ZnO nanoparticles as core material, ZnS and Au as shell material. ZnS and Au in composite material can synergistically increase electron transmission efficiency of LED adopting same.

First claim

What is claimed is:

1. A preparation method for a composite material, comprising:
providing a ZnO nanoparticle and an Au source, and the Au source includes at least one of a bulk Au or an Au particle; and
mixing the ZnO nanoparticle, the Au source, and an S source with a first organic solvent, and performing a hydrothermal reaction, before obtaining the composite material.

2. The preparation method according to claim 1 , wherein a temperature for the hydrothermal reaction is 300-350° C.; and/or
a molar ratio of the ZnO nanoparticles to the Au source and the S source is 1:0.1-0.5:0.01-0.1.

3. The preparation method according to claim 1 , wherein the S source includes at least one of sodium sulfide, thiourea, thioacetamide, or L-cysteine; and/or
the first organic solvent comprises oleylamine and octadecene.

4. The preparation method according to claim 1 , wherein a preparation method for the ZnO nanoparticle comprises: adding alkaline solution into a dispersion of a zinc salt to form a transparent solution, and carrying out a purification treatment to obtain the ZnO nanoparticle.

5. The preparation method according to claim 4 , wherein the zinc salt includes at least one of zinc chloride, zinc nitrate, zinc acetate, zinc sulfate, or zinc acetate dihydrate; and/or
the alkali in the alkaline solution includes at least one of potassium hydroxide, sodium hydroxide, ammonia water, or tetramethylammonium hydroxide; and/or
a molar ratio of the zinc salt to the OH − in the alkaline solution is 1:1.5 to 3.

6. The preparation method according to claim 4 , wherein the dispersion of the zinc salt is formed by dissolving the zinc salt in a second organic solvent, the second organic solvent includes at least one of dimethyl sulfoxide or N,N-dimethylformamide.

7. The preparation method according to claim 1 , wherein a preparation method for the Au source comprises: mixing chloroauric acid with a first organic solvent to perform a redox reaction and obtain the Au source.

8. The preparation method according to claim 7 , wherein a temperature for mixing the chloroauric acid with the first organic solvent is 100-150° C.; and/or
a time for mixing the chloroauric acid with the first organic solvent is 1-2 h.

9. The preparation method according to claim 7 , wherein a temperature for the redox reaction is 300-350° C.; and/or the redox reaction time is 1-2 h.

10. The preparation method according to claim 1 , wherein the hydrothermal reaction time is 1-3 h.

11. A composite material, comprising: a core and a shell formed on a surface of the core; the core material is a ZnO nanoparticle, the shell material is ZnS and Au; wherein the shell comprises a ZnS layer and a plurality of Au atoms or Au microclusters loaded on a surface of the ZnS layer and in an isolated distribution, while the ZnS layer is coated on a surface of the core.

12. The composite material according to claim 11 , wherein a particle size of the composite material is 15-40 nm.

13. The composite material according to claim 12 , wherein the particle size of the composite material is 20-40 nm.

14. The composite material according to claim 11 , wherein the composite material is composed by the core and the shell formed on the surface of the core.

15. A quantum dot light-emitting diode, comprising: a cathode, an anode, a quantum dot light-emitting layer arranged between the cathode and the anode, and an electron transport layer arranged between the cathode and the quantum dot light-emitting layer, wherein the electron transport layer comprises a composite material prepared by a preparation method comprising:
providing a ZnO nanoparticle and an Au source; the Au source includes at least one of a bulk Au or an Au particle;
mixing the ZnO nanoparticle, the Au source, and an S source with a first organic solvent, and performing a hydrothermal reaction, before obtaining the composite material; and/or the electron transport layer comprises a composite material comprising: a core and a shell formed on a surface of the core; the core material is a ZnO nanoparticle, the shell material is ZnS and Au; wherein the shell comprises a ZnS layer and a plurality of Au atoms or Au microclusters loaded on a surface of the ZnS layer and in an isolated distribution, while the ZnS layer is coated on a surface of the core.

16. The quantum dot light-emitting diode according to claim 15 , wherein the electron transport layer is the composite material prepared by the preparation method comprising:
providing a ZnO nanoparticle and an Au source; the Au source includes at least one of a bulk Au or an Au particle; and
mixing the ZnO nanoparticle, the Au source, an S source with a first organic solvent, and performing a hydrothermal reaction, before obtaining the composite material; and/or the electron transport layer is the composite material comprising: a core and a shell formed on a surface of the core; the core material is a ZnO nanoparticle, the shell material is ZnS and Au; wherein the shell comprises a ZnS layer and a plurality of Au atoms or Au microclusters loaded on a surface of the ZnS layer and in an isolated distribution, while the ZnS layer is coated on a surface of the core.

17. The quantum dot light-emitting diode according to claim 15 , wherein the quantum dot light-emitting diode further comprises at least one layer of a hole transport layer and a hole injection layer arranged between the light-emitting layer and the anode, when arranging both the hole transport layer and the hole injection layer, the hole transport layer is arranged on a side close to the quantum dot light-emitting layer, and the hole injection layer is arranged on a side close to the anode.

18. The quantum dot light-emitting diode according to claim 15 , wherein a thickness of the electron transport layer is 20-60 nm.

19. A preparation method for a quantum dot light-emitting diode, comprising:
providing an anode;
preparing a quantum dot light-emitting layer on the anode;
preparing an electron transport layer on the quantum light-emitting layer, the electron transport layer comprising a composite material prepared by a preparation method comprising:
providing a ZnO nanoparticle and an Au source, and the Au source includes at least one of a bulk Au or an Au particle;
mixing the ZnO nanoparticle, the Au source, and an S source with a first organic solvent, and performing a hydrothermal reaction, before obtaining the composite material; and/or the electron transport layer comprising a composite material comprising: a core and a shell formed on a surface of the core; the core material is a ZnO nanoparticle, the shell material is ZnS and Au; wherein the shell comprises a ZnS layer and a plurality of Au atoms or Au microclusters loaded on a surface of the ZnS layer and in an isolated distribution, while the ZnS layer is coated on a surface of the core;
preparing a cathode on the electron transport layer; or
providing a cathode;
preparing an electron transport layer on the cathode, the electron transport layer comprising the composite material prepared by the preparation method comprising:
providing a ZnO nanoparticle and an Au source; the Au source includes at least one of a bulk Au or an Au particle;
mixing the ZnO nanoparticle, the Au source, an S source with a first organic solvent, and performing a hydrothermal reaction, before obtaining the composite material; and/or the electron transport layer comprising the composite material comprising: a core and a shell formed on a surface of the core; the core material is a ZnO nanoparticle,

Assignees

• Tcl Tech Group Corp

Inventors

• Guo Yulin
• Wu Longjia
• Zhang Tianshuo
• Li Junjie

Classifications

• C01G9/08

  Sulfides · CPC title

• C01G9/02

  Oxides; Hydroxides · CPC title

• H10K85/00

  Organic materials used in the body or electrodes of devices covered by this subclass · CPC title

• H10K2102/331

  Nanoparticles used in non-emissive layers, e.g. in packaging layer · CPC title

• H10K50/16

  Electron transporting layers · CPC title